Abstract: An electroplating solution includes an aqueous electrolyte solution including water soluble copper salts, sulfide ions and chloride ions, an accelerator including an organic material having sulfur (S), the accelerator accelerating copper (Cu) reduction, a suppressor including a polyether compound, the suppressor selectively suppressing the copper reduction, and a leveler including a water soluble polymer having nitrogen that is dissolved into positive ions in the aqueous electrolyte solution.

Abstract: An electroplating solution includes an aqueous electrolyte solution including water soluble copper salts, sulfide ions and chloride ions, an accelerator including an organic material having sulfur (S), the accelerator accelerating copper (Cu) reduction, a suppressor including a polyether compound, the suppressor selectively suppressing the copper reduction, and a leveler including a water soluble polymer having nitrogen that is dissolved into positive ions in the aqueous electrolyte solution.

Abstract: Provided is a composition for use in chemical mechanical polishing. The composition includes an amino acid and its derivatives, a surfactant, and an additive that increases the swelling of polishing particles.

Abstract: A metal etching solution may include nitric acid, hydrochloric acid, organic acid and water. A semiconductor product fabricating method may include forming a seed layer on a substrate with a metal pad, forming a sacrificial layer that may have an opening exposing the seed layer on the substrate with the seed layer, forming a gold bump that may fill the opening of the sacrificial layer by performing gold electroplating, removing the sacrificial layer, and etching the seed layer exposed by the gold bump, using an etching solution that may include nitric acid, hydrochloric acid, organic acid and water.

Abstract: A composition for removing a photoresist and a method of forming a bump electrode using the composition are provided. The composition includes an amine compound having a hydroxyl group, a polar organic solvent having a heteroatom, an alkylammonium hydroxide and water. The method of forming the bump electrode includes forming a conductive pattern on a substrate, forming a passivation layer on the substrate, the passivation layer having a first opening that partially exposes the conductive pattern, forming a photoresist pattern on the passivation layer, the photoresist pattern having a second opening that exposes the first opening forming a bump electrode that fills the first opening and the second opening, and removing the photoresist pattern from the substrate using a composition including an amine compound having a hydroxyl group, a polar organic solvent having a heteroatom, an alkylammonium hydroxide and water.