Patents by Inventor Yun Gyeong YI

Yun Gyeong YI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Silicon precursor compound, preparation method therefor, and silicon-containing film formation method using same
    Patent number: 11905305
    Abstract: The present application relates to a silicon precursor compound, a method for preparing the silicon precursor compound, a precursor composition for depositing a silicon-containing oxide thin film or nitride thin film, the precursor composition comprising the silicon precursor compound, and a method for depositing a silicon-containing oxide thin film or nitride thin film using the precursor composition.
    Type: Grant
    Filed: May 14, 2021
    Date of Patent: February 20, 2024
    Assignee: UP CHEMICAL CO., LTD.
    Inventors: Jin Sik Kim, Myeong Ho Kim, Mi Hee Lee, Byung Kwan Kim, Jun Hwan Choi, Sungwoo Ahn, Yun Gyeong Yi
  • YTTRIUM/LANTHANIDE METAL PRECURSOR COMPOUND, COMPOSITION FOR FORMING FILM INCLUDING THE SAME, AND METHOD OF FORMING YTTRIUM/LANTHANIDE METAL CONTAINING FILM USING THE SAME
    Publication number: 20220325411
    Abstract: The present disclosure relates to an yttrium/lanthanide metal precursor compound, a precursor composition for depositing an yttrium/lanthanide metal-containing film including the yttrium/lanthanide metal precursor compound, and a method of depositing the yttrium/lanthanide metal-containing film using the precursor composition.
    Type: Application
    Filed: June 24, 2022
    Publication date: October 13, 2022
    Inventors: Jin Sik KIM, Myeong-Ho PARK, Dong Hwan MA, Yun Gyeong YI, Jun Hwan CHOI
  • SILICON PRECURSOR COMPOUND, PREPARATION METHOD THEREFOR, AND SILICON-CONTAINING FILM FORMATION METHOD USING SAME
    Publication number: 20210269463
    Abstract: The present application relates to a silicon precursor compound, a method for preparing the silicon precursor compound, a precursor composition for depositing a silicon-containing oxide thin film or nitride thin film, the precursor composition comprising the silicon precursor compound, and a method for depositing a silicon-containing oxide thin film or nitride thin film using the precursor composition.
    Type: Application
    Filed: May 14, 2021
    Publication date: September 2, 2021
    Inventors: Jin Sik KIM, Myeong Ho KIM, Mi Hee LEE, Byung Kwan KIM, Jun Hwan CHOI, Sungwoo AHN, Yun Gyeong YI