Patents by Inventor Yun-Han Ma

Yun-Han Ma has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of fabricating high voltage device
    Patent number: 8420488
    Abstract: A high voltage device is provided. The high voltage device includes a gate on a substrate, two source/drain regions in the substrate beside the gate, and a composite gate dielectric layer that includes at least two stacked continuous layers, extending from one side to another side of the gate. Wherein, the at least two stacked continuous layers is a combination of at least one thermal oxide layer and at least one chemical vapor deposited layer.
    Type: Grant
    Filed: September 11, 2007
    Date of Patent: April 16, 2013
    Assignee: United Microelectronics Corp.
    Inventors: Yun-Han Ma, Ming-Tsung Lee, Shih-Ming Liang, Hwi-Huang Chen
  • HIGH VOLTAGE DEVICE AND METHOD OF FABRICATING THE SAME
    Publication number: 20090065879
    Abstract: A high voltage device is provided. The high voltage device includes a gate on a substrate, two source/drain regions in the substrate beside the gate, and a composite gate dielectric layer that includes at least two stacked continuous layers, extending from one side to another side of the gate. Wherein, the at least two stacked continuous layers is a combination of at least one thermal oxide layer and at least one chemical vapor deposited layer.
    Type: Application
    Filed: September 11, 2007
    Publication date: March 12, 2009
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventors: Yun-Han Ma, Ming-Tsung Lee, Shih-Ming Liang, Hwi-Huang Chen