Patents by Inventor Yun-Heng Tseng

Yun-Heng Tseng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20190067203
    Abstract: A metrology target of a semiconductor device is provided. The metrology target includes a substrate including first and second layers. The first layer includes a first grating, a second grating, and a first dummy structure. The first dummy structure is at least formed between the first grating and the second grating. The second layer is formed over the first layer and includes a third grating and a fourth grating. The first, second, third and fourth gratings are formed based on the first spatial period. The third grating and fourth grating are placed to overlap the first grating and second grating, respectively. The first grating and the third grating are formed with a first positional offset which is along a first direction. The second grating and the fourth grating are formed with a second positional offset which is along a second direction which is opposite to the first direction.
    Type: Application
    Filed: August 31, 2017
    Publication date: February 28, 2019
    Inventors: Long-Yi CHEN, Jia-Hong CHU, Hsin-Chin LIN, Hsiang-Yu SU, Yun-Heng TSENG, Kai-Hsiung CHEN, Yu-Ching WANG, Po-Chung CHENG, Kuei-Shun CHEN, Chi-Kang CHANG
  • Patent number: 10204867
    Abstract: A metrology target of a semiconductor device is provided. The metrology target includes a substrate including first and second layers. The first layer includes a first grating, a second grating, and a first dummy structure. The first dummy structure is at least formed between the first grating and the second grating. The second layer is formed over the first layer and includes a third grating and a fourth grating. The first, second, third and fourth gratings are formed based on the first spatial period. The third grating and fourth grating are placed to overlap the first grating and second grating, respectively. The first grating and the third grating are formed with a first positional offset which is along a first direction. The second grating and the fourth grating are formed with a second positional offset which is along a second direction which is opposite to the first direction.
    Type: Grant
    Filed: August 31, 2017
    Date of Patent: February 12, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Long-Yi Chen, Jia-Hong Chu, Hsin-Chin Lin, Hsiang-Yu Su, Yun-Heng Tseng, Kai-Hsiung Chen, Yu-Ching Wang, Po-Chung Cheng, Kuei-Shun Chen, Chi-Kang CHang
  • Publication number: 20120325300
    Abstract: An inverted metamorphic (IMM) solar cell semiconductor structure for use of a laser lift-off (LLO) process using external laser is introduced. The IMM solar cell semiconductor structure includes a substrate layer, a sacrifice layer, a plurality of bandgap layers, and a handle layer. The sacrifice layer, formed on the substrate layer, is made of a material containing a III-V compound. The bandgap layers, formed on the sacrifice layer, are for producing movements of electronic holes according to an absorbed extrinsic light wavelength. The handle layer is formed on the bandgap layers. Laser penetrates the substrate layer to fall on the sacrifice layer, such that the bandgap layers are lifted off by the sacrifice layer, thereby resulting in a high-efficiency IMM solar cell. A LLO laser lift-off method for the IMM solar cell semiconductor is further provided.
    Type: Application
    Filed: December 27, 2011
    Publication date: December 27, 2012
    Applicant: INSTITUTE OF NUCLEAR ENERGY RESEARCH, ATOMIC ENERGY COUNCIL, EXECUTIVE YUAN
    Inventors: Chan-Wei Yeh, Chih-Hung Wu, Min-De Yang, Yun-Heng Tseng