Abstract: A non-volatile memory device includes a memory cell array region in which memory cells are vertically stacked on a substrate and a page buffer region in which first and second page buffers are arranged. A first distance between the memory cell array region and the first page buffer is shorter than a second distance between the memory cell array region and the second page buffer. The first page buffer includes a first transistor driven in response to a first control signal. The second page buffer includes a second transistor driven in response to a second control signal corresponding to the first control signal. At least one of design constraints and processing constraints with respect to the first and second transistors is different.

Abstract: A non-volatile memory device includes a memory cell array region in which memory cells are vertically stacked on a substrate and a page buffer region in which first and second page buffers are arranged. A first distance between the memory cell array region and the first page buffer is shorter than a second distance between the memory cell array region and the second page buffer. The first page buffer includes a first transistor driven in response to a first control signal. The second page buffer includes a second transistor driven in response to a second control signal corresponding to the first control signal. At least one of design constraints and processing constraints with respect to the first and second transistors is different.

Abstract: An apparatus for manufacturing an integrated thin film solar cell in which a plurality of unit cells are electrically connected in series to each other in vacuum may be provided that includes: a photoelectric converter forming process chamber which forms a photoelectric converter by emitting a photoelectric conversion material on a substrate where a first conductive layer has been formed from one basic line within each of a plurality of trenches formed in the substrate to a bottom of each of the trenches, to one side continuous from the bottom, and to a protruding surface of the substrate, which is continuous from the one side; and a second conductive layer forming process chamber which forms a second conductive layer from another basic line within each of the trenches to the bottom of each of the trenches, to the other side continuous from the bottom, and to a protruding surface of the substrate, which is continuous from the other side.