Abstract: Provided is a method of operating a terminal. The method includes determining a profile item applicable to the profile view for the account based on an input received by the terminal and a coordinate indicating a position where the profile item is provided on the profile view. The method includes displaying the profile item on a screen of the terminal based on the determined profile item and the determined coordinate. The method includes receiving an input related to the profile item, and displaying a visual effect corresponding to the input on the screen.

Abstract: A functional safety system of a robot according to an exemplary embodiment of the present disclosure can generate a safety zone which is a zone to sense whether an obstacle is present.

Abstract: A functional safety system of a robot according to an exemplary embodiment of the present disclosure can duplicate modules so as to satisfy a performance level d (pl-d) required for the functional satisfy of a robot.

Abstract: A functional safety system of a robot according to an exemplary embodiment of the present disclosure can duplicate modules so as to satisfy a performance level d (pl-d) required for the functional satisfy of a robot.

Abstract: A connector assembly includes a first connector and a second connector. The first connector includes a first main body, a guide member disposed on a side surface of the first main body, and a connecting member disposed on the first main body. The second connector is configured to be combined with the first connector. The second connector includes a second main body, a fixing member disposed on a side surface of the second main body and rotatably connected to each side surfaces at an end portion of the second main body, and a connecting pad disposed on the second main body to contact with the connecting member. Thus, the first connector and the second connector may combine and separate easily, so that a damage of the connector assembly may be prevented.

Abstract: A connector assembly includes a first connector and a second connector. The first connector includes a first main body, a guide member disposed on a side surface of the first main body, and a connecting member disposed on the first main body. The second connector is configured to be combined with the first connector. The second connector includes a second main body, a fixing member disposed on a side surface of the second main body and rotatably connected to each side surfaces at an end portion of the second main body, and a connecting pad disposed on the second main body to contact with the connecting member. Thus, the first connector and the second connector may combine and separate easily, so that a damage of the connector assembly may be prevented.

Abstract: A method of manufacturing an image sensor is provided. In this method, a photoelectric conversion unit may be formed within a semiconductor substrate, wherein the semiconductor substrate includes an active pixel region and an optical black region. An annealing layer may be formed on the active pixel region and the optical black region and etched so that the annealing layer covers at least a portion of the optical black region. A wiring pattern may be formed on the annealing layer. A light-blocking pattern may be formed on the wiring pattern so as to cover the entire photoelectric conversion unit of the optical black region, thereby blocking light from being incident upon the optical black region.

Abstract: An image sensor includes a substrate, an anti-reflection board and a light shielding film. The substrate includes first pixels to receive a light, and second pixels to provide a black level compensation. The first pixels are formed in an active region and the second pixels are formed in a first region spaced apart from the active region in a row direction. The anti-reflection board is formed in a second region above the substrate, and the second region is between the active region and the first region. The light shielding film is formed above the anti-reflection board, and the light shielding film covers an optical black region including the first and second regions. Therefore, the image sensor may be used in a CCD type image sensor and a CMOS type image sensor to provide a stabilized black level, thereby improving a quality of a displayed image.

Abstract: For color correction in an image sensor, an image sensor processing block generates a plurality of color correction parameters corresponding to a plurality of selected pixels of the image sensor for defining a plurality of areas of a sample image. In addition, a color correction value calculation block generates a respective color correction value corresponding to a given pixel from bilinear interpolation of a respective subset of the color correction parameters corresponding to a respective one of the areas including a respective location of the given pixel.

Abstract: A solid-state image sensing device including an anti-reflection structure that uses polysilicon and a method of manufacturing the same, in which the solid-state image sensing device includes a photodiode region and a transistor region. The photodiode region includes a semiconductor substrate, a first anti-refection layer, a second anti-reflection layer, and a top layer. The first anti-reflection layer is formed on the semiconductor substrate, and the second anti-reflection layer is formed on the first anti-reflection layer. The top layer is formed on the second anti-reflection layer. Each of the semiconductor substrate and the second anti-reflection layer is formed of a first material, and each of the first anti-reflection layer and the top layer is formed of a second material different from the first material.

Abstract: An image sensor includes a first type semiconductor layer, a second type semiconductor layer and a first type well. The first type semiconductor layer is formed on a semiconductor substrate and includes a plurality of pixels which receive external light and convert optical charges into an electrical signal. The second type semiconductor layer is supplied with a drain voltage to have a potential different from that of the first semiconductor layer, and the first type well controls a power source voltage (VDD) using the drain voltage.

Abstract: A method of manufacturing an image sensor is provided. In this method, a photoelectric conversion unit may be formed within a semiconductor substrate, wherein the semiconductor substrate includes an active pixel region and an optical black region. An annealing layer may be formed on the active pixel region and the optical black region and etched so that the annealing layer covers at least a portion of the optical black region. A wiring pattern may be formed on the annealing layer. A light-blocking pattern may be formed on the wiring pattern so as to cover the entire photoelectric conversion unit of the optical black region, thereby blocking light from being incident upon the optical black region.

Abstract: An image sensor may include a plurality of photodiodes for performing a photo-electric conversion and a plurality of microlenses. Each of the microlenses is formed over one of the photodiodes. The image sensor may further include a vertical light generating portion formed over the microlenses and configured to refract each of plurality of incident light rays such that the light rays are vertically incident on the microlenses.

Abstract: An image sensor includes a substrate, an anti-reflection board and a light shielding film. The substrate includes first pixels to receive a light, and second pixels to provide a black level compensation. The first pixels are formed in an active region and the second pixels are formed in a first region spaced apart from the active region in a row direction. The anti-reflection board is formed in a second region above the substrate, and the second region is between the active region and the first region. The light shielding film is formed above the anti-reflection board, and the light shielding film covers an optical black region including the first and second regions. Therefore, the image sensor may be used in a CCD type image sensor and a CMOS type image sensor to provide a stabilized black level, thereby improving a quality of a displayed image.

Abstract: Provided is a layout of a CMOS image sensor having an asymmetrical pixel structure in which a plurality of photodiodes may share a transistor block. The layout may include a first region in which a plurality of photodiodes are arranged asymmetrically on a semiconductor substrate, a second region including a metal shield layer arranged on an upper surface of the first region, and a third region arranged on an upper surface of the second region. The metal shield layer may be arranged asymmetrically according to the layout of the photodiodes.

Abstract: An image sensor includes a semiconductor substrate on which a plurality of photo diodes are formed. A plurality of interlayer dielectrics are formed above the semiconductor substrate, and a plurality of metal lines are formed on each of the interlayer dielectrics. A plurality of micro lenses are formed above the uppermost one of the interlayer dielectrics. The light passing through the zoom lenses is incident on the respective micro lenses. The plurality metal lines formed on at least one of the plurality of interlayer dielectrics have the same width.

Abstract: An image sensor may include a plurality of photodiodes for performing a photo-electric conversion and a plurality of microlenses. Each of the microlenses is formed over one of the photodiodes. The image sensor may further include a vertical light generating portion formed over the microlenses and configured to refract each of plurality of incident light rays such that the light rays are vertically incident on the microlenses.

Abstract: For color correction in an image sensor, an image sensor processing block generates a plurality of color correction parameters corresponding to a plurality of selected pixels of the image sensor for defining a plurality of areas of a sample image. In addition, a color correction value calculation block generates a respective color correction value corresponding to a given pixel from bilinear interpolation of a respective subset of the color correction parameters corresponding to a respective one of the areas including a respective location of the given pixel.

Abstract: An image sensor applying a power voltage to a backside of a semiconductor substrate includes a first type semiconductor substrate, a first type semiconductor layer formed on the first type semiconductor substrate, a second type semiconductor layer formed on the first type semiconductor layer, and a power voltage receiver formed on a backside of the first type semiconductor substrate opposite the first type semiconductor layer with respect to the first type semiconductor substrate, wherein the power voltage receiver receives a power voltage from outside and applies the power voltage to the first type semiconductor substrate.

Abstract: An image sensor includes a first type semiconductor layer, a second type semiconductor layer and a first type well. The first type semiconductor layer is formed on a semiconductor substrate and includes a plurality of pixels which receive external light and convert optical charges into an electrical signal. The second type semiconductor layer is supplied with a drain voltage to have a potential different from that of the first semiconductor layer, and the first type well controls a power source voltage (VDD) using the drain voltage.