Abstract: A crystallization method and system are provided which improve a crystallization process by deciding a best-fit focal plane for a laser beam using a test mask and then applying the decided best-fit focal plane to the crystallization process. The crystallization method includes loading a test mask on a mask stage; deciding a best-fit focal plane by performing a crystallization test using the test mask, checking the test result and deciding conditions of a best-fit focal plane from the test result; moving the mask stage to a position corresponding to the best-fit focal plane; loading a mask for crystallization process onto the moved mask stage; and performing the crystallization process using the mask for crystallization process.

Abstract: A victim system detector for detecting whether a second wireless communication system uses frequency bands that are used by a first wireless communication system (detecting whether the second wireless communication system is a victim system) includes a correlator and a decision unit. The correlator calculates a correlation value between a frequency domain baseband signal associated with the first wireless communication system and a correlation sequence of the second wireless communication system. The decision unit determines, based on the correlation value, whether the second wireless communication system is a victim system. Therefore, the victim system is detected accurately and efficiently.

Abstract: A novel silicon crystallization apparatus and a silicon crystallization method renders it is possible to form alignment key without additional photolithography, and to adjust a substrate to a correct position by sensing a deviation of the substrate when the substrate is loaded. The silicon crystallization apparatus includes a moving stage being moved in a horizontal direction, and a fixing plate provided in the moving stage, to fix a substrate. A rotating frame is provided in the moving stage, to rotate the fixing plate.

Abstract: A fabricating method of an array substrate for a liquid crystal display device including forming a polycrystalline silicon film on a substrate having a display region and a peripheral region, the polycrystalline silicon film having grains of square shape, forming a first active layer in the display region and a second active layer in the peripheral region by etching the polycrystalline silicon film, forming a first gate electrode over the first active layer, a second gate electrode over the second active layer and a gate line connected to the first gate electrode, and forming first source and drain electrodes connected to the first active layer, second source and drain electrodes connected to the second active layer and data line connected to the first source electrode. Further, the second gate electrode overlaps the first active layer to form a first channel region, and the first channel region is formed inside one of the grains.

Abstract: A sequential lateral solidification device and a method of crystallizing silicon using the same controls a size and arrangement overlapping areas of laser beam patterns adjacently irradiated onto a substrate to within specific regions of a pixel area and a driving area outside the pixel area. The device includes a laser generating device irradiating a laser beam, a focusing lens focusing the laser beam, a mask having a pattern of transparent regions permitting the laser beam to be transmitted a laser beam pattern, a reduction lens reducing the laser beam pattern transmitted by the mask, a substrate having a pixel area and a driving area exposed to the irradiated laser beam pattern, a moveable stage having, on which the substrate is mounted, and a position sensor sensing an position of the irradiated laser beam pattern and controlling a size and arrangement overlapping areas between adjacently irradiated laser beam patterns.

Abstract: A silicon crystallizing device includes a laser beam source emitting a laser beam, a projector unit converging and changing a pattern of the laser beam from the laser beam source, a stage loading/unloading a substrate, a mirror deflecting the laser beam from the projector unit to an outside of the substrate, and a cooling device receiving the laser beam deflected by the mirror and sinking heat generated by the laser beam received, thereby warming up the projection lens before completion of loading the substrate, or cutting off laser beam incident on the substrate after crystallization of the substrate.

Abstract: A fabricating method of an array substrate for a liquid crystal display device including forming a polycrystalline silicon film on a substrate having a display region and a peripheral region, the polycrystalline silicon film having grains of square shape, forming a first active layer in the display region and a second active layer in the peripheral region by etching the polycrystalline silicon film, forming a first gate electrode over the first active layer, a second gate electrode over the second active layer and a gate line connected to the first gate electrode, and forming first source and drain electrodes connected to the first active layer, second source and drain electrodes connected to the second active layer and data line connected to the first source electrode. Further, the second gate electrode overlaps the first active layer to form a first channel region, and the first channel region is formed inside one of the grains.

Abstract: A method of forming a polycrystalline silicon layer includes: disposing a mask over the amorphous silicon layer, the mask having a plurality of transmissive regions, the plurality of transmissive regions being disposed in a stairstep arrangement spaced apart from each other in a first direction and a second direction substantially perpendicular from the first direction, each transmissive region having a central portion and first and second side portions that are adjacent to opposite ends of the central portion along the first direction, and wherein each of the portions has a length along the first direction and a width along the second direction, and wherein the width of first and second portions decreases away from the central portion along the first direction; irradiating a laser beam onto the amorphous silicon layer a first time through the mask to form a plurality of first irradiated regions corresponding to the plurality of transmissive regions, each first irradiated region having a central portion, and

Abstract: An laser crystallization device and a method for crystallizing silicon by using the same is disclosed, to carry out the crystallization process at both the X-axis and Y-axis directions without rotation of a stage, wherein the laser crystallization device is includes a mask including first and second regions, the first region having an open part oriented in the X-axis direction, and the second region having an open part oriented in the Y-axis direction.

Abstract: An embodiment of a laser crystallization method includes providing a substrate on which an amorphous silicon thin film is deposited, positioning a laser mask over the substrate, the laser mask including a mask pattern that contains transmitting regions and a blocking region, irradiating a first laser beam onto a surface of the substrate through the pattern of the laser mask to first crystallize a predetermined region of the silicon thin film, moving the laser mask or a stage on which the substrate is loaded in an X-axis direction to perform second crystallization using the laser mask, repeatedly performing the crystallization to an end of the substrate in the X-axis direction, moving the laser mask or the stage in a Y-axis direction, and repeatedly performing the crystallization in the Y-axis direction to complete crystallization.

Abstract: A sequential lateral solidification (SLS) device and a method of crystallizing silicon using the same is disclosed, wherein alignment keys are formed on a substrate with one mask having a plurality of different patterns, and a crystallization process is progressed in parallel to an imaginary line connecting the alignment keys with information for a distance between the mask and the alignment key. The SLS device includes a laser beam generator for irradiating laser beams; a mask having a plurality of areas; a mask stage for moving the mask loaded thereto, to transmit a laser beam through a selective area of the mask; and a substrate stage for moving a substrate loaded thereto, to change portions of the substrate irradiated with the laser beam passing through the mask.

Abstract: A laser mask includes a mask pattern with edges having inverted shapes to alleviate the effects of diffraction of laser beams to reduce overlap regions such that crystallization characteristics are improved. The laser mask includes a mask pattern that includes transmitting regions and a blocking region. The edges of the mask have shapes inverted to the shapes of the edges of a silicon thin film crystallized by the pattern.

Abstract: A laser beam pattern mask includes at least one or more transmitting parts, each transmitting part having a central portion and a pair of edge portions provided to both sides of the central portion, each having a substantially triangular shape defined by a virtual boundary line between the central portion and the corresponding edge portion, an upper outside extending from an upper end of the boundary line at an acute angle, and a lower outside extending from a lower end of the boundary line at the acute angle to meet the upper outside at a rounded corner.

Abstract: A laser crystallizing device including a mask divided into two regions, having open parts of the same shape at complementary positions; and a light-shielding pattern selectively leaving one region of the mask open and masking the other region.

Abstract: The present invention provides a novel ?-sulfonimide compound having at least one imide group and at least one sulfonyl group and a method for preparing the same.

Abstract: A laser beam pattern mask includes an opaque substrate and a plurality of transmission portions formed in the substrate to transmit light, wherein each of the transmission portions extend in a first direction while being uniformly spaced apart from one another by a predetermined distance in a second direction perpendicular to the first direction, each of the transmission portions including hexagonal cells arranged in the first direction and in contact with one another.

Abstract: A sequential lateral solidification apparatus includes a laser generator for generating and emitting a laser beam; an X-Y stage movable in two orthogonal axial directions; and a mask arranged between the laser generator and the X-Y stage. The mask has a plurality of slits through which the laser beam passes. An objective lens for scaling down the laser beam is arranged between the mask and the X-Y stage. A mask stage is connected to the mask for controlling minute movement of the mask for crystallizing amorphous silicon in one block.

Abstract: A method of forming a polycrystalline silicon layer includes: disposing a mask over the amorphous silicon layer, the mask having a plurality of transmissive regions, the plurality of transmissive regions being disposed in a stairstep arrangement spaced apart from each other in a first direction and a second direction substantially perpendicular from the first direction, each transmissive region having a central portion and first and second side portions that are adjacent to opposite ends of the central portion along the first direction, and wherein each of the portions has a length along the first direction and a width along the second direction, and wherein the width of first and second portions decreases away from the central portion along the first direction; irradiating a laser beam onto the amorphous silicon layer a first time through the mask to form a plurality of first irradiated regions corresponding to the plurality of transmissive regions, each first irradiated region having a central portion, and

Abstract: A sequential lateral solidification apparatus includes a laser generator for generating and emitting a laser beam; an X-Y stage movable in two orthogonal axial directions; and a mask arranged between the laser generator and the X-Y stage. The mask has a plurality of slits through which the laser beam passes. An objective lens for scaling down the laser beam is arranged between the mask and the X-Y stage. A mask stage is connected to the mask for controlling minute movement of the mask for crystallizing amorphous silicon in one block.

Abstract: A fabricating method of an array substrate for a liquid crystal display device including forming a polycrystalline silicon film on a substrate having a display region and a peripheral region, the polycrystalline silicon film having grains of square shape, forming a first active layer in the display region and a second active layer in the peripheral region by etching the polycrystalline silicon film, forming a first gate electrode over the first active layer, a second gate electrode over the second active layer and a gate line connected to the first gate electrode, and forming first source and drain electrodes connected to the first active layer, second source and drain electrodes connected to the second active layer and data line connected to the first source electrode. Further, the second gate electrode overlaps the first active layer to form a first channel region, and the first channel region is formed inside one of the grains.