Patents by Inventor Yun Hoe KIM

Yun Hoe KIM has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220275514
    Abstract: Provided is a substrate processing apparatus. The positions of a first electrode and a second electrode are adjusted in advance in consideration of differences in coefficients of thermal expansion so that a short circuit created by contact between the first electrode and the second electrode is prevented even in the case in which the first electrode and the second electrode are thermally expanded during processing. Even in the case in which the first electrode and the second electrode are thermally expanded due to an increase in temperature during processing, a short circuit between the first electrode and the second electrode can be prevented, and the uniformity of a thin film can be maintained in the substrate processing apparatus for processing a large substrate.
    Type: Application
    Filed: June 11, 2020
    Publication date: September 1, 2022
    Inventors: Jae Wan LEE, Yong Hyun KIM, Yoon Jeong KIM, Yun Hoe KIM, Chang Kyun PARK, Gu Hyun JUNG, Ki Bum KIM, Seung Youb SA
  • Patent number: 10283593
    Abstract: Disclosed is a thin film transistor including a gate electrode on a substrate, a gate insulator over the entire surface of the substrate including the gate electrode, a first active layer corresponding to the gate electrode on the gate insulator, a second active layer on or under the first active layer, and a source electrode and a drain electrode spaced apart by a predetermined distance, the source electrode and the drain electrode being connected to the first active layer or the second active layer.
    Type: Grant
    Filed: February 12, 2016
    Date of Patent: May 7, 2019
    Assignee: Jusung Engineering Co., Ltd.
    Inventors: Jin Wook Moon, Yun Hoe Kim, Jae Ho Kim, Kyu Bum Lee, Jae Wan Lee
  • Publication number: 20180033858
    Abstract: Disclosed is a thin film transistor including a gate electrode on a substrate, a gate insulator over the entire surface of the substrate including the gate electrode, a first active layer corresponding to the gate electrode on the gate insulator, a second active layer on or under the first active layer, and a source electrode and a drain electrode spaced apart by a predetermined distance, the source electrode and the drain electrode being connected to the first active layer or the second active layer.
    Type: Application
    Filed: February 12, 2016
    Publication date: February 1, 2018
    Inventors: Jin Wook MOON, Yun Hoe KIM, Jae Ho KIM, Kyu Bum LEE, Jae Wan LEE
  • Publication number: 20120298008
    Abstract: Provided are a dielectric thin film and a method for manufacturing the same. The dielectric thin film has a composition represented by the formula of TaxMg1-xO, wherein 0.082?x?0.89. The dielectric thin film provides excellent dielectric characteristics. Particularly, the dielectric thin film provides a high relative permittivity as well as low dielectric loss and leakage current, although it is formed (deposited) at a low temperature of 350° C. or lower (between room temperature and 350° C.).
    Type: Application
    Filed: July 25, 2011
    Publication date: November 29, 2012
    Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Ji Won CHOI, Seok Jin YOON, Jin Sang KIM, Chong Yun KANG, Ho Won JANG, Yun Hoe KIM