Abstract: Provided is a substrate processing apparatus. The positions of a first electrode and a second electrode are adjusted in advance in consideration of differences in coefficients of thermal expansion so that a short circuit created by contact between the first electrode and the second electrode is prevented even in the case in which the first electrode and the second electrode are thermally expanded during processing. Even in the case in which the first electrode and the second electrode are thermally expanded due to an increase in temperature during processing, a short circuit between the first electrode and the second electrode can be prevented, and the uniformity of a thin film can be maintained in the substrate processing apparatus for processing a large substrate.

Abstract: A heating device provides heat for heating in various modes, such as an air flow direction control mode, a radiant heat specialized mode, and a convective heat specialized mode, through rotation of thermally conductive plates depending on user's requirements, thereby increasing user satisfaction. The thermally conductive plates increase heating efficiency by ensuring thermal efficiency according to a mode corresponding to the purpose of use.

Abstract: Provided is a substrate processing apparatus. The positions of a first electrode and a second electrode are adjusted in advance in consideration of differences in coefficients of thermal expansion so that a short circuit created by contact between the first electrode and the second electrode is prevented even in the case in which the first electrode and the second electrode are thermally expanded during processing. Even in the case in which the first electrode and the second electrode are thermally expanded due to an increase in temperature during processing, a short circuit between the first electrode and the second electrode can be prevented, and the uniformity of a thin film can be maintained in the substrate processing apparatus for processing a large substrate.

Abstract: A potassium nitrate level detection sensing module M in a strengthening furnace according to the present invention includes a level detection means, which is installed inside a glass strengthening furnace, installed at a height equal to a level line of strengthening liquid to be filled in the strengthening furnace F, and generates an electrical signal having a set threshold or more or an electrical signal having the set threshold or less when it comes into contact with the strengthening liquid and detects that the strengthening liquid filled in the glass strengthening furnace F has reached a set strengthening liquid level line. The potassium nitrate level detection sensing module in the strengthening furnace according to the present invention having such a configuration can automatically identify that potassium nitrate in a liquid state, which is melted in the strengthening furnace, has reached the set level line in the strengthening furnace.

Abstract: A potassium nitrate level detection sensing module M in a strengthening furnace according to the present invention includes a level detection means, which is installed inside a glass strengthening furnace, installed at a height equal to a level line of strengthening liquid to be filled in the strengthening furnace F, and generates an electrical signal having a set threshold or more or an electrical signal having the set threshold or less when it comes into contact with the strengthening liquid and detects that the strengthening liquid filled in the glass strengthening furnace F has reached a set strengthening liquid level line. The potassium nitrate level detection sensing module in the strengthening furnace according to the present invention having such a configuration can automatically identify that potassium nitrate in a liquid state, which is melted in the strengthening furnace, has reached the set level line in the strengthening furnace.

Abstract: Provided is a substrate processing apparatus. The positions of a first electrode and a second electrode are adjusted in advance in consideration of differences in coefficients of thermal expansion so that a short circuit created by contact between the first electrode and the second electrode is prevented even in the case in which the first electrode and the second electrode are thermally expanded during processing. Even in the case in which the first electrode and the second electrode are thermally expanded due to an increase in temperature during processing, a short circuit between the first electrode and the second electrode can be prevented, and the uniformity of a thin film can be maintained in the substrate processing apparatus for processing a large substrate.

Abstract: Disclosed is a thin film transistor including a gate electrode on a substrate, a gate insulator over the entire surface of the substrate including the gate electrode, a first active layer corresponding to the gate electrode on the gate insulator, a second active layer on or under the first active layer, and a source electrode and a drain electrode spaced apart by a predetermined distance, the source electrode and the drain electrode being connected to the first active layer or the second active layer.

Abstract: Disclosed is a thin film transistor including a gate electrode on a substrate, a gate insulator over the entire surface of the substrate including the gate electrode, a first active layer corresponding to the gate electrode on the gate insulator, a second active layer on or under the first active layer, and a source electrode and a drain electrode spaced apart by a predetermined distance, the source electrode and the drain electrode being connected to the first active layer or the second active layer.

Abstract: Provided are a dielectric thin film and a method for manufacturing the same. The dielectric thin film has a composition represented by the formula of TaxMg1-xO, wherein 0.082?x?0.89. The dielectric thin film provides excellent dielectric characteristics. Particularly, the dielectric thin film provides a high relative permittivity as well as low dielectric loss and leakage current, although it is formed (deposited) at a low temperature of 350° C. or lower (between room temperature and 350° C.).