Abstract: In an embodiment a traffic speed prediction device includes at least one processor is configured to determine a second section connected with a first section, wherein the second section is a target road section, and wherein the first section includes a road section in front of the second section, to output first output data using traffic speed data during a first time, the traffic speed data being obtained based on probe data collected in the first section and the second section, to output second output data using traffic volume data during a second time, the traffic volume data being obtained based on the probe data collected in the first section and the second section, and to predict a traffic speed of the road including the second section using the first output data and the second output data.

Abstract: A method of forming a notched gate structure comprising a semiconductor substrate having a first oxide layer formed thereon. A first conductive layer is formed on the semiconductor substrate. A portion of the first conductive layer and a portion of the first oxide layer are removed to form first gate structures. First spacers are formed on the sidewalls of the gate structure. A second oxide layer is formed on the semiconductor substrate. A second conductive layer is formed on the surface of the second oxide layer. The first gate structures and the second conductive layer formed thereon are then removed to form a second gate structure. Second spacers are formed on the sidewalls of the second gate structure to complete the notched gate structure process. The method of the present invention reduces the capacitance between the gate and the source/drain extension, and simplifies the process, thereby increasing the controllability of the process.

Abstract: A method of fabricating self-aligned contact structures comprising providing a semiconductor substrate having at least two conductive structures thereon. The conductive structures are positioned beside the desired self-aligned contact structures having a plurality of masking structures thereon. Each masking structure has a top surface and a vertical surface. A dielectric layer is formed over the semiconductor substrate. A portion of the dielectric layer is removed by etching to expose the top surface and the vertical surface of each masking structure. A plurality of spacers is formed on the exposed vertical surface. While subsequently forming the self-aligned contact structures between two conductive structures, the peripheral of the nitride spacers has the low parasitic capacitance.

Abstract: Disclosed is an automatic transmission system in which an ECU calculates change of the running speed to automatically shift the gears under optimal conditions. The automatic transmission system used for heavy construction equipment for variably changing a rotative speed of an output shaft by selectively engaging any one of a plurality of change gears according to the selection of oil passages of a solenoid valve includes a speed sensor for sensing the rotative speed of the output shaft or a running speed of the heavy construction equipment, a converter connected to the speed sensor, for converting a value sensed by the speed sensor into an electrical signal and a controller for receiving the electrical signal output from the converter and comparing the electrical signal with a pre-stored value, to apply a driving signal to the solenoid valve if the electrical signal is within a predetermined range, so as to shift gears.