Abstract: A semiconductor package and a method of manufacturing the same are disclosed, wherein the semiconductor package includes a circuit board, a semiconductor chip mounted on the circuit board, an encapsulant positioned on the circuit board and encapsulating the semiconductor chip to the circuit board, and a thermal dissipating member positioned on the encapsulant and having a heat spreader that dissipates a driving heat from the semiconductor chip and a heat capacitor that absorbs excess driving heat that exceeds a heat transfer capability of the heat spreader, such that when a high power is applied to the package, the excess heat is absorbed into the heat capacitor as a latent heat and thus the semiconductor chip is protected from an excessive temperature increase caused by the excess heat, thereby increasing a critical time and performance duration time of the semiconductor package.

Abstract: A semiconductor package and a method of manufacturing the same are disclosed, wherein the semiconductor package includes a circuit board, a semiconductor chip mounted on the circuit board, an encapsulant positioned on the circuit board and encapsulating the semiconductor chip to the circuit board, and a thermal dissipating member positioned on the encapsulant and having a heat spreader that dissipates a driving heat from the semiconductor chip and a heat capacitor that absorbs excess driving heat that exceeds a heat transfer capability of the heat spreader, such that when a high power is applied to the package, the excess heat is absorbed into the heat capacitor as a latent heat and thus the semiconductor chip is protected from an excessive temperature increase caused by the excess heat, thereby increasing a critical time and performance duration time of the semiconductor package.