Patents by Inventor Yun Hyung Sun

Yun Hyung Sun has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • MOS transistor and manufacturing method thereof
    Patent number: 7838319
    Abstract: There are provided a MOS transistor and a manufacturing method thereof. The MOS transistor includes a substrate on which an insulating layer is formed, a gate embedded in the insulating layer, wherein the top surface of the gate is exposed, a gate oxide layer formed on the insulating layer and the gate, a silicon layer formed on the gate oxide layer, and a source region and a drain region formed in the silicon layer to be in contact with the gate oxide layer.
    Type: Grant
    Filed: November 3, 2008
    Date of Patent: November 23, 2010
    Assignee: Dongbu Electronics Co., Ltd.
    Inventor: Yun Hyung Sun
  • MOS transistor and manufacturing method thereof
    Publication number: 20090072311
    Abstract: There are provided a MOS transistor and a manufacturing method thereof. The MOS transistor includes a substrate on which an insulating layer is formed, a gate embedded in the insulating layer, wherein the top surface of the gate is exposed, a gate oxide layer formed on the insulating layer and the gate, a silicon layer formed on the gate oxide layer, and a source region and a drain region formed in the silicon layer to be in contact with the gate oxide layer.
    Type: Application
    Filed: November 3, 2008
    Publication date: March 19, 2009
    Inventor: Yun Hyung Sun