Abstract: The present disclosure relates to a watermarking method for responding to screen capture of information processing devices such as computers, and corresponding devices and systems. According to the present disclosure, a method of operation for an information processing device including a processor and a memory may be provided. The method may acquire a device identification code for the information processing device and store it in the memory. The processor may detect a screen capture attempt on the information processing device. The processor may insert a watermark into captured screen data stored in the memory. The watermark and the device identification code may be associated with each other.

Abstract: Disclosed a method for augmenting training data by combining an object and a background with each other. The method includes extracting an object image, wherein the object image is a machine learning target; determining a type of the object image; receiving a background image, wherein the background image comprises a plurality of different background regions; identifying a first background region and a second background region among the plurality of different background regions; and combining the object image with the first background region and the second background region to augment training data, wherein combining the object image with the first background region and the second background region includes randomly positioning an image of a first type object corresponding to the first background region into the first background region, and randomly positioning an image of a second type object corresponding to the second background region into the second background region.

Abstract: Semiconductor devices may include a diffusion prevention insulation pattern, a plurality of conductive patterns, a barrier layer, and an insulating interlayer. The diffusion prevention insulation pattern may be formed on a substrate, and may include a plurality of protrusions protruding upwardly therefrom. Each of the conductive patterns may be formed on each of the protrusions of the diffusion prevention insulation pattern, and may have a sidewall inclined by an angle in a range of about 80 degrees to about 135 degrees to a top surface of the substrate. The barrier layer may cover a top surface and the sidewall of each if the conductive patterns. The insulating interlayer may be formed on the diffusion prevention insulation pattern and the barrier layer, and may have an air gap between neighboring ones of the conductive patterns.

Abstract: A semiconductor device includes an insulating interlayer disposed on a substrate, a first protection pattern, a first barrier pattern, a first adhesion pattern, and a first conductive pattern. The insulating interlayer includes a via hole and a first trench. The via hole extends through a lower portion of the insulating interlayer. The first trench is connected to the via hole and extends through an upper portion of the insulating interlayer. The first protection pattern covers a lower surface and sidewalls of the via hole and a portion of a lower surface and a lower sidewall of the first trench, and includes a conductive material. The first barrier pattern covers the protection pattern and an upper sidewall of the first trench. The first adhesion pattern covers the first barrier pattern. The first conductive pattern is disposed on the first adhesion pattern, and fills the via hale and the first trench.

Abstract: Semiconductor devices may include a diffusion prevention insulation pattern, a plurality of conductive patterns, a barrier layer, and an insulating interlayer. The diffusion prevention insulation pattern may be formed on a substrate, and may include a plurality of protrusions protruding upwardly therefrom. Each of the conductive patterns may be formed on each of the protrusions of the diffusion prevention insulation pattern, and may have a sidewall inclined by an angle in a range of about 80 degrees to about 135 degrees to a top surface of the substrate. The barrier layer may cover a top surface and the sidewall of each if the conductive patterns. The insulating interlayer may be formed on the diffusion prevention insulation pattern and the barrier layer, and may have an air gap between neighboring ones of the conductive patterns.

Abstract: Semiconductor devices may include a diffusion prevention insulation pattern, a plurality of conductive patterns, a barrier layer, and an insulating interlayer. The diffusion prevention insulation pattern may be formed on a substrate, and may include a plurality of protrusions protruding upwardly therefrom. Each of the conductive patterns may be formed on each of the protrusions of the diffusion prevention insulation pattern, and may have a sidewall inclined by an angle in a range of about 80 degrees to about 135 degrees to a top surface of the substrate. The barrier layer may cover a top surface and the sidewall of each if the conductive patterns. The insulating interlayer may be formed on the diffusion prevention insulation pattern and the barrier layer, and may have an air gap between neighboring ones of the conductive patterns.

Abstract: A semiconductor device includes an insulating interlayer disposed on a substrate, a first protection pattern, a first barrier pattern, a first adhesion pattern, and a first conductive pattern. The insulating interlayer includes a via hole and a first trench, The via hole extends through a lower portion of the insulating interlayer. The first trench is connected to the via hole and extends through an upper portion of the insulating interlayer, The first protection pattern covers a lower surface and sidewalls of the via hole and a portion of a lower surface and a lower sidewall of the first trench, and includes a conductive material. The first barrier pattern covers the protection pattern and an upper sidewall of the first trench. The first adhesion pattern covers the first barrier pattern. The first conductive pattern is disposed on the first adhesion pattern, and fills the via hale and the first trench.

Abstract: Semiconductor devices may include a diffusion prevention insulation pattern, a plurality of conductive patterns, a barrier layer, and an insulating interlayer. The diffusion prevention insulation pattern may be formed on a substrate, and may include a plurality of protrusions protruding upwardly therefrom. Each of the conductive patterns may be formed on each of the protrusions of the diffusion prevention insulation pattern, and may have a sidewall inclined by an angle in a range of about 80 degrees to about 135 degrees to a top surface of the substrate. The barrier layer may cover a top surface and the sidewall of each if the conductive patterns. The insulating interlayer may be formed on the diffusion prevention insulation pattern and the barrier layer, and may have an air gap between neighboring ones of the conductive patterns.

Abstract: There are provided a graphene having an oxygen atom content in a predetermined range or less and a carbon/oxygen weight ratio in a specific range to show excellent electrical and thermal conductivity properties, and a barrier property, and a method and an apparatus for preparing the graphene having excellent electrical and thermal conductivity properties and a barrier property by using a subcritical-state fluid or a supercritical-state fluid. According to the method and the apparatus for preparing the graphene, impurities such as graphene oxide, and the like, may be effectively removed, such that uniformity of the graphene to be prepared may be increased, and therefore, the graphene which is highly applicable as materials throughout the industry may be mass-produced.

Abstract: Semiconductor devices may include a diffusion prevention insulation pattern, a plurality of conductive patterns, a barrier layer, and an insulating interlayer. The diffusion prevention insulation pattern may be formed on a substrate, and may include a plurality of protrusions protruding upwardly therefrom. Each of the conductive patterns may be formed on each of the protrusions of the diffusion prevention insulation pattern, and may have a sidewall inclined by an angle in a range of about 80 degrees to about 135 degrees to a top surface of the substrate. The barrier layer may cover a top surface and the sidewall of each if the conductive patterns. The insulating interlayer may be formed on the diffusion prevention insulation pattern and the barrier layer, and may have an air gap between neighboring ones of the conductive patterns.

Abstract: There are a method and an apparatus for modifying a graphene, and more specifically, a method and an apparatus for modifying a graphene capable of obtaining the graphene having a desired crystallite size by repeating a process for modifying the graphene using subcritical or supercritical carbon dioxide several times. According to the method and the apparatus for modifying the graphene of the present invention, the graphene having excellent electrical conductivity and dispersibility may be obtained.

Abstract: Provided area carbon nanotube composite material obtained by treating a mixture including carbon nanotubes, at least one carbon compound other than carbon nanotubes and a dispersion medium under a sub-critical or super-critical condition of 50-400 atm, and a method for producing the same. More particularly, the method for producing a carbon nanotube composite material, includes: introducing a mixture including carbon nanotubes, at least one carbon compound other than carbon nanotubes and a dispersion medium into a preheating unit under a pressure of 1-400 atm to preheat the mixture; treating the preheated mixture under a sub-critical or super-critical condition of 50-400 atm; cooling and depressurizing the resultant product to 0-1000 C and 1-10 atm; and recovering the cooled and depressurized product. Provided also is an apparatus for producing a carbon nanotube composite material in a continuous manner.

Abstract: Provided is a resin composition for electromagnetic interference shielding. More particularly, provided is a resin composition having superior dispersibility and impact relaxation and high conductivity, the resin comprising: (a) 100 parts by weight of a resin; based on 100 parts by weight of the resin, (b) 0.1 to 15 parts by weight of a carbon nanotube surface-modified in a condition of the absence of oxidant; and (c) 1 to 40 parts by weight of a carbon compound, a metal, a metal compound, or a mixture thereof. The resin composition for electromagnetic interference shielding, comprising a carbon hydride composite, is specifically useful in an electronic control unit material for weight reduction of car, and thus can be replaced with a high-priced heavy metal material.

Abstract: Semiconductor devices may include a diffusion prevention insulation pattern, a plurality of conductive patterns, a barrier layer, and an insulating interlayer. The diffusion prevention insulation pattern may be formed on a substrate, and may include a plurality of protrusions protruding upwardly therefrom. Each of the conductive patterns may be formed on each of the protrusions of the diffusion prevention insulation pattern, and may have a sidewall inclined by an angle in a range of about 80 degrees to about 135 degrees to a top surface of the substrate. The barrier layer may cover a top surface and the sidewall of each if the conductive patterns. The insulating interlayer may be formed on the diffusion prevention insulation pattern and the barrier layer, and may have an air gap between neighboring ones of the conductive patterns.

Abstract: There are provided a method and an apparatus for preparing a functionalized graphene, and a functionalized graphene, and more specifically, a method and an apparatus for preparing a functionalized graphene having excellent electrical and thermal conductivity properties, and a barrier property, using a fluid in a subcritical condition or a supercritical condition and a functional compound, and a functionalized graphene.

Abstract: There are provided a graphene having an oxygen atom content in a predetermined range or less and a carbon/oxygen weight ratio in a specific range to show excellent electrical and thermal conductivity properties, and a barrier property, and a method and an apparatus for preparing the graphene having excellent electrical and thermal conductivity properties and a barrier property by using a subcritical-state fluid or a supercritical-state fluid. According to the method and the apparatus for preparing the graphene, impurities such as graphene oxide, and the like, may be effectively removed, such that uniformity of the graphene to be prepared may be increased, and therefore, the graphene which is highly applicable as materials throughout the industry may be mass-produced.

Abstract: There are a method and an apparatus for modifying a graphene, and more specifically, a method and an apparatus for modifying a graphene capable of obtaining the graphene having a desired crystallite size by repeating a process for modifying the graphene using subcritical or supercritical carbon dioxide several times. According to the method and the apparatus for modifying the graphene of the present invention, the graphene having excellent electrical conductivity and dispersibility may be obtained.

Abstract: There are provided a heat dissipation paint composition capable of forming a heat dissipation layer having excellent salt water resistance, coating film strength, adherence property, scratch resistance, and the like, together with excellent heat dissipation property, in various products, and a heat dissipation structure. The heat dissipation paint composition includes: an epoxy resin; a curing agent; a carbon-based filler having a functional group including at least one selected from the group consisting of an amine group, an amide group, a carboxyl group and a hydroxyl group bound thereto; and a solvent.

Abstract: Provided is a resin composition for electromagnetic interference shielding. More particularly, provided is a resin composition having superior dispersibility and impact relaxation and high conductivity, the resin comprising: (a) 100 parts by weight of a resin; based on 100 parts by weight of the resin, (b) 0.1 to 15 parts by weight of a carbon nanotube surface-modified in a condition of the absence of oxidant; and (c) 1 to 40 parts by weight of a carbon compound, a metal, a metal compound, or a mixture thereof. The resin composition for electromagnetic interference shielding, comprising a carbon hydride composite, is specifically useful in an electronic control unit material for weight reduction of car, and thus can be replaced with a high-priced heavy metal material.

Abstract: Provided are a conductive paint composition and a method for manufacturing a conductive film using the same. The conductive paint composition of the present invention includes: a dispersant made of a block copolymer consisting of a hydrophilic polymer unit and a hydrophobic polymer unit; a conductive material made of a surface-modified carbon compound; a polymer binder: and a medium containing water, an organic solvent, or a mixture thereof. The conductive paint composition is coated and cured on the substrate to form the conductive film, thereby controlling a surface structure of the substrate, and thus, imparting uniform antistatic function, electrostatic dissipation (ESD), conductivity, electromagnetic interference shield function to the substrate.