Abstract: The present disclosure relates to a cleaning agent composition for a substrate for a semiconductor device and a method for cleaning a substrate for a semiconductor device using the same. The cleaning agent composition contains a silicon-based compound represented by Formula 1 and an aprotic organic solvent with a dielectric constant of 10 or less, which can form a surface protective film capable of preventing collapse of the pattern even in a wet cleaning process of fine patterns with high aspect ratios, thereby providing a method for manufacturing a semiconductor device with an improved semiconductor manufacturing yield.

Abstract: Provided is an ultra large-width coating device applied to a consecutive process. More particularly, the present invention relates to a coating device capable of maximizing productivity by consecutively manufacturing a large-width film without reducing physical properties of the manufactured film by overcoming a problem in that a coating width is limited during a coating process using the existing contact type coating roller, and a method for manufacturing an ultra large-width membrane using the same.

Abstract: Disclosed is a graphene-based ternary barristor using a Schottky junction graphene semiconductor. A graphene channel layer is doped with N-type and N-type dopants to have two different Fermi levels and form a PN junction. Accordingly, a voltage is applied to a gate electrode layer to move the Fermi levels of the graphene channel layer and adjust the height of the Schottky barrier, thus generating current. Also, the height of the Schottky barrier is adjusted depending on the doping concentration of the graphene channel That is, the height of the Schottky barrier is changed depending on the applied gate voltage, and thus the flow of current is changed. Also, it is possible to adjust the height of the Schottky barrier by adjusting the doping concentration of the graphene channel. Accordingly, since the graphene-based ternary barristor has a high current ratio by adjusting a gate voltage, the graphene-based ternary barristor may be applied to a logic circuit.

Abstract: Disclosed is a graphene transistor using graphene as a channel region and a logic device using the same. A doping metal layer is provided over a graphene channel of the graphene transistor. The doping metal layer has a work function higher or lower than that of the graphene. When the doping metal layer has a work function lower than that of the graphene, the graphene, which is below the doping metal layer, is doped with an n-type. Also, when the doping metal layer has a work function higher than that of the graphene, the graphene, which is below the doping metal layer, is doped with a p-type. As described above, various aspects of junction may be implemented in the graphene channel, and three states may be obtained from a single transistor.

Abstract: Disclosed is a graphene-based ternary barristor using a Schottky junction graphene semiconductor. A graphene channel layer is doped with N-type and N-type dopants to have two different Fermi levels and form a PN junction. Accordingly, a voltage is applied to a gate electrode layer to move the Fermi levels of the graphene channel layer and adjust the height of the Schottky barrier, thus generating current. Also, the height of the Schottky barrier is adjusted depending on the doping concentration of the graphene channel That is, the height of the Schottky barrier is changed depending on the applied gate voltage, and thus the flow of current is changed. Also, it is possible to adjust the height of the Schottky barrier by adjusting the doping concentration of the graphene channel. Accordingly, since the graphene-based ternary barristor has a high current ratio by adjusting a gate voltage, the graphene-based ternary barristor may be applied to a logic circuit.

Abstract: Disclosed is a graphene transistor using graphene as a channel region and a logic device using the same. A doping metal layer is provided over a graphene channel of the graphene transistor. The doping metal layer has a work function higher or lower than that of the graphene. When the doping metal layer has a work function lower than that of the graphene, the graphene, which is below the doping metal layer, is doped with an n-type. Also, when the doping metal layer has a work function higher than that of the graphene, the graphene, which is below the doping metal layer, is doped with a p-type. As described above, various aspects of junction may be implemented in the graphene channel, and three states may be obtained from a single transistor.

Abstract: A processor includes a first architectural register configured to store first data based on a result of executing an instruction in a first loop, the first architectural register being mapped to one of a plurality of physical registers; and a control unit configured to determine, before execution of the instruction in an n-th loop (n being a natural number greater than 1), at least one of whether the first data stored in the first architectural register is changed and whether a physical register, among the plurality of physical registers, to which the first architectural register is mapped is changed, and, based on a result of determination, execute the instruction in the n-th loop.

Abstract: The present disclosure relates to a method for sterilizing sealed and packaged food using atmospheric-pressure plasma and sealed and packaged food prepared thereby. The method includes: seal packaging food by injecting a gas containing 10 vol % or more of oxygen, carbon dioxide or a mixture gas thereof based on the total gas into a plastic packaging material containing the food or vacuum packing food in a plastic packaging material; and treating the packaged food with direct atmospheric-pressure plasma, thereby allowing food which cannot be heat-treated, such as fresh food, to be sterilized and allowing food to be sterilized even when polyethylene, polypropylene, nylon or polyethylene terephthalate through which plasma cannot pass is used as a food packaging material.