Patents by Inventor Yun-Ju Yang

Yun-Ju Yang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Light-sensing apparatus and light-sensing method thereof
    Patent number: 12013463
    Abstract: A photo-detecting apparatus is provided. The photo-detecting apparatus includes: a substrate made by a first material or a first material-composite; an absorption layer made by a second material or a second material-composite, the absorption layer being supported by the substrate and the absorption layer including: a first surface; a second surface arranged between the first surface and the substrate; and a channel region having a dopant profile with a peak dopant concentration equal to or more than 1×1015 cm?3, wherein a distance between the first surface and a location of the channel region having the peak dopant concentration is less than a distance between the second surface and the location of the channel region having the peak dopant concentration, and wherein the distance between the first surface and the location of the channel region having the peak dopant concentration is not less than 30 nm.
    Type: Grant
    Filed: March 14, 2023
    Date of Patent: June 18, 2024
    Assignee: Artilux, Inc.
    Inventors: Szu-Lin Cheng, Chien-Yu Chen, Shu-Lu Chen, Yun-Chung Na, Ming-Jay Yang, Han-Din Liu, Che-Fu Liang, Jung-Chin Chiang, Yen-Cheng Lu, Yen-Ju Lin
  • Method and device of ion source generation
    Patent number: 7687784
    Abstract: An implanter is equipped with an ion beam current detector, a temperature sensor, a temperature controller and a cooling system to increase the ratio of a specific ion cluster in the ion source chamber of the implanter. Therefore, the implanting efficiency for a shallow ion implantation is increased consequently.
    Type: Grant
    Filed: May 23, 2008
    Date of Patent: March 30, 2010
    Assignees: Advanced Ion Beam Technology, Inc., Advanced Ion Beam Technology, Inc.
    Inventors: Nai-Yuan Cheng, Yun-Ju Yang, Cheng-Hui Shen, Junhua Hong, Jiong Chen, Tienyu Sheng, Linuan Chen
  • METHOD AND DEVICE OF ION SOURCE GENERATION
    Publication number: 20090194704
    Abstract: An implanter is equipped with an ion beam current detector, a temperature sensor, a temperature controller and a cooling system to increase the ratio of a specific ion cluster in the ion source chamber of the implanter. Therefore, the implanting efficiency for a shallow ion implantation is increased consequently.
    Type: Application
    Filed: May 23, 2008
    Publication date: August 6, 2009
    Inventors: Nai-Yuan CHENG, Yun-Ju Yang, Cheng-Hui Shen, Junhua Hong, Jiong Chen, Tienyu Sheng, Linuan Chen