Abstract: A method of forming a notched gate structure comprising a semiconductor substrate having a first oxide layer formed thereon. A first conductive layer is formed on the semiconductor substrate. A portion of the first conductive layer and a portion of the first oxide layer are removed to form first gate structures. First spacers are formed on the sidewalls of the gate structure. A second oxide layer is formed on the semiconductor substrate. A second conductive layer is formed on the surface of the second oxide layer. The first gate structures and the second conductive layer formed thereon are then removed to form a second gate structure. Second spacers are formed on the sidewalls of the second gate structure to complete the notched gate structure process. The method of the present invention reduces the capacitance between the gate and the source/drain extension, and simplifies the process, thereby increasing the controllability of the process.

Abstract: A method of fabricating self-aligned contact structures comprising providing a semiconductor substrate having at least two conductive structures thereon. The conductive structures are positioned beside the desired self-aligned contact structures having a plurality of masking structures thereon. Each masking structure has a top surface and a vertical surface. A dielectric layer is formed over the semiconductor substrate. A portion of the dielectric layer is removed by etching to expose the top surface and the vertical surface of each masking structure. A plurality of spacers is formed on the exposed vertical surface. While subsequently forming the self-aligned contact structures between two conductive structures, the peripheral of the nitride spacers has the low parasitic capacitance.

Abstract: A semiconductor wafer cleaning apparatus comprises an outer tank, a cleaning tank provided within the outer tank, a wafer carrier provided within the cleaning tank, a plurality of jet nozzles directed toward the wafer carrier, a main pipe connected to the jet nozzles, a circulating pump connected to the main pipe and the outer tank for circulating a cleansing solution from the outer tank, through the main pipe, the jet nozzles, and the cleaning tank, and a filter for filtering the circulated cleansing solution.

Abstract: A semiconductor wafer cleaning apparatus comprises an outer tank, a cleaning tank provided within the outer tank, a wafer carrier provided within the cleaning tank, a plurality of jet nozzles directed toward the wafer carrier, a main pipe connected to the jet nozzles, a circulating pump connected to the main pipe and the outer tank for circulating a cleansing solution from the outer tank, through the main pipe, the jet nozzles, and the cleaning tank, and a filter for filtering the circulated cleansing solution.

Abstract: A semiconductor wafer cleaning apparatus comprises an outer tank, a cleaning tank provided within the outer tank, a wafer carrier provided within the cleaning tank, a plurality of jet nozzles directed toward the wafer carrier, a main pipe connected to the jet nozzles, a circulating pump connected to the main pipe and the outer tank for circulating a cleansing solution from the outer tank, through the main pipe, the jet nozzles, and the cleaning tank, and a filter for filtering the circulated cleansing solution.

Abstract: A dual thickness gate insulation layer, for use with, e.g., a dual gate MOSFET (Metal Oxide Semiconductor Field Effect Transistor), is formed using a more simplified method and improves the reliability. An impurity layer is formed in the semiconductor substrate, and the impurity layer includes a first portion and a second portion. An insulation layer is grown in the semiconductor substrate, and the insulation layer includes a first layer and a second layer which are different from each other in thickness. The present invention simplifies the insulation layer fabricating steps and improves product reliability.

Abstract: A method of forming a capacitor for a semiconductor device includes the steps of forming a gate electrode on a semiconductor substrate, forming an impurity diffused region on portions of the semiconductor substrate at sides of the gate electrode, forming a storage node electrode layer contacting one side of the impurity diffused region, forming a thermal nitride film on the storage node electrode layer, forming a Ta.sub.2 O.sub.5 layer on the thermal nitride film, and annealing the Ta.sub.2 O.sub.5 layer using an N.sub.2 O gas.

Abstract: A system and method for cleaning semiconductor wafers, includes an internal cleaning tank having an outlet and a cassette for holding wafers, and a device disposed near the outlet of the internal cleaning tank for releasing a cleaning solution so as to increase a flow rate of the cleaning solution by creating a spiral flow of the cleaning solution, an external cleaning tank having an intake through which the cleaning solution is supplied to clean the wafers in the internal cleaning tank, a circulating pipe for connecting the outlet to the intake, a circulating pump formed in the middle section of the circulating pipe to repeatedly circulate that cleaning solution, and a filter for filtering the used cleaning solution circulated by the circulating pump to return the cleaning solution to the internal cleaning tank through the intake. The device prevents contaminating materials from adhering to the semiconductor wafers by spirally drawing out the used cleaning solution from the internal tank.

Abstract: A semiconductor wafer cleaning apparatus includes an internal cleaning tank having an inlet for introducing and an outlet for removing a cleaning solution, and an external cleaning tank surrounding the internal cleaning tank and having a plurality of inlets and outlets for introducing and removing the cleaning solution. First and second circulation pumps each disposed in the middle of the first and second circulation pipes for connecting the inlet and outlet of the internal cleaning tank with the plurality of inlets and outlets of the external cleaning tank are also provided. A baffle plate may also be disposed within the internal cleaning tank for fixing and separating a cassette having a plurality of wafers contained therein from the bottom of internal cleaning tank.

Abstract: A nozzle for spraying a cleaning solution, a body of the nozzle having its intake at one end, its sealed end portion at the other end, and a plurality of holes arranged linearly on its surface form inside of the body to outside of the body are disclosed. Also disclosed is a cleaning apparatus of a semiconductor device which includes a bath where wafers are cleaned and a cleaning solution spraying nozzle mounted at the bottom of the bath for spraying a cleaning solution through a plurality of holes formed on its surface, with the nozzle's one side being connected to a cleaning solution supply tube and the nozzle's other side being sealed. The hole's area through which the solution passes gradually decreases from one side of the nozzle through which the cleaning solution is induced, to the other side sealed so that the solution is sprayed with a uniform pressure.

Abstract: A semiconductor wafer cleaning apparatus includes an internal cleaning tank having an inlet for introducing and an outlet for removing a cleaning solution, and an external cleaning tank surrounding the internal cleaning tank and having a plurality of inlets and outlets for introducing and removing the cleaning solution. First and second circulation pumps each disposed in the middle of the first and second circulation pipes for connecting the inlet and outlet of the internal cleaning tank with the plurality of inlets and outlets of the external cleaning tank are also provided. A baffle plate may also be disposed within the internal cleaning tank for fixing and separating a cassette having a plurality of wafers contained therein from the bottom of internal cleaning tank.

Abstract: A wet-etching method which determines a desired etch-ended point includes the steps of providing an etchant solution in a bath, performing the wet-etch process by dipping a material to be etched in the bath, measuring a weight variation value of the material during the wet etch process, calculating a thickness variation value of the material by using the weight variation value, and stopping the wet-etch process when the thickness variation value reaches a preset value.

Abstract: A method for determining an etch-ending point using a vapor etch apparatus having a chamber is disclosed including the steps of providing a vapor-state etchant in the chamber, inserting a material to be etched in the chamber and etching the material by the etchant, measuring an ion current intensity of a by-product generated during the vapor etch process, calculating a thickness variation value of the material by using the ion current intensity value, and stopping the vapor etch process when the thickness variation value reaches a preset value.