Patents by Inventor Yun-Kang (Kevin) K. Wu

Yun-Kang (Kevin) K. Wu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6232634
    Abstract: A non-volatile memory cell (81) includes a drain-side select transistor (86), a source-side select transistor (87), and a storage transistor (88). The drain-side select transistor (86) is adjacent to the drain of the storage transistor (88) to prevent drain-disturb events. The source-side select transistor (87) is adjacent to the source of the storage transistor (88) to prevent source-disturb events. The select gate (152) of the drain-side select transistor (86), the select gate (143) of the source-side select transistor (87), and the floating gate (147) of the storage transistor (88) are formed on a dielectric layer (123) having a uniform thickness.
    Type: Grant
    Filed: July 29, 1998
    Date of Patent: May 15, 2001
    Assignee: Motorola, Inc.
    Inventors: Yun-Kang (Kevin) K. Wu, Danny P. Shum, Craig Thomas Swift