Abstract: Single-crystal silicon carbide nanowires and a method for producing the nanowires are provided. The single-crystal silicon carbide nanowires have a very high aspect ratio and can be used for the fabrication of nanoelectronic devices, including electron gun emitters and MEMS probe tips, for use in a variety of displays and analyzers. Further provided is a filter comprising the nanowires. The filter is applied to systems for filtering vehicle engine exhaust gases to achieve improved filtering performance and increased lifetime.

Abstract: Single-crystal silicon carbide nanowires and a method for producing the nanowires are provided. The single-crystal silicon carbide nanowires have a very high aspect ratio and can be used for the fabrication of nanoelectronic devices, including electron gun emitters and MEMS probe tips, for use in a variety of displays and analyzers. Further provided is a filter comprising the nanowires. The filter is applied to systems for filtering vehicle engine exhaust gases to achieve improved filtering performance and increased lifetime.

Abstract: The present invention relates to a fabrication method of gallium manganese nitride (GaMnN) single crystal nanowire, more particularly to a fabrication method of GaMnN single crystal nanowire substrate by halide vapor phase epitaxy (HVPE) in which such metal components as gallium (Ga) and manganese (Mn) react with such gas components as nitrogen (N2), hydrogen chloride (HCl) and ammonia (NH3), wherein the amount of the gas components are adjusted to control the Mn doping concentration in order to obtain nanowire having a perfect, one-dimensional, single crystal structure without internal defect, concentration of holes, or carriers, and magnetization value of which being determined by the doping concentration and showing ferromagnetism at room temperature, thus being a useful spin transporter in the field of the next-generation spintronics, such as spin-polarized LED, spin-polarized FET, etc.

Abstract: The present invention relates to a fabrication method of gallium manganese nitride (GaMnN) single crystal nanowire, more particularly to a fabrication method of GaMnN single crystal nanowire substrate by halide vapor phase epitaxy (HVPE) in which such metal components as gallium (Ga) and manganese (Mn) react with such gas components as nitrogen (N2), hydrogen chloride (HCl) and ammonia (NH3), wherein the amount of the gas components are adjusted to control the Mn doping concentration in order to obtain nanowire having a perfect, one-dimensional, single crystal structure without internal defect, concentration of holes, or carriers, and magnetization value of which being determined by the doping concentration and showing ferromagnetism at room temperature, thus being a useful spin transporter in the field of the next-generation spintronics, such as spin-polarized LED, spin-polarized FET, etc.