Abstract: A T-gate forming method for a high electron mobility transistor includes the steps of: coating a first, a second and a third resist, each having an electron beam sensitivity different from each other, on a semiconductor substrate; performing a first exposure process by using an electron beam on the semiconductor substrate and then selectively developing the third resist; defining a gate head area by selectively developing the second resist to have a developed width wider than that of the third resist; performing a second exposure process by using an electron beam on the semiconductor substrate and then selectively developing the first resist in a bent shape at a temperature lower than in the development of the second and the third steps; and depositing metallic materials on the resists and then removing them to form a T-gate.

Abstract: A T-gate forming method for a high electron mobility transistor includes the steps of: coating a first, a second and a third resist, each having an electron beam sensitivity different from each other, on a semiconductor substrate; performing a first exposure process by using an electron beam on the semiconductor substrate and then selectively developing the third resist; defining a gate head area by selectively developing the second resist to have a developed width wider than that of the third resist; performing a second exposure process by using an electron beam on the semiconductor substrate and then selectively developing the first resist in a bent shape at a temperature lower than in the development of the second and the third steps; and depositing metallic materials on the resists and then removing them to form a T-gate.

Abstract: A method for forming a T-gate of a metamorphic high electron mobility transistor is provided. The method includes sequentially laminating a plurality of resist films on a substrate; forming a T-shaped pattern in the laminated resist films using electron beam lithography; forming a gate metal layer on the substrate where the T-shaped pattern has been formed; attaching an adhesion member to the gate metal layer formed on a top surface of the laminated resist films and detaching the adhesion member to thereby remove the gate metal layer; and removing the laminated resist films.

Abstract: A T-gate forming method for a high electron mobility transistor includes the steps of: coating a first, a second and a third resist, each having an electron beam sensitivity different from each other, on a semiconductor substrate; performing a first exposure process by using an electron beam on the semiconductor substrate and then selectively developing the third resist; defining a gate head area by selectively developing the second resist to have a developed width wider than that of the third resist; performing a second exposure process by using an electron beam on the semiconductor substrate and then selectively developing the first resist in a bent shape at a temperature lower than in the development of the second and the third steps; and depositing metallic materials on the resists and then removing them to form a T-gate.

Abstract: Disclosed is a method for correcting inner pin distortion generated in the CRT product and deflection yoke thereof. According to the disclosed method and deflection yoke thereof, the additional circuit for suppressing inner pin distortion phenomenon on the screen is not required as the related art, reduction in manufacturing costs is possibly achieved. Also, as the circuit for suppressing pincushion is not used, power dissipation could be reduced, and instability in dispersion and characteristics of a pin in the middle portion due to increase of dispersion generation by a wiring of a coil could be resolved.

Abstract: The present invention relates generally to a deflection yoke for a color television, and more particularly to a deflection yoke, in which an auxiliary coil provided to a deflection coil that is a part of a deflection yoke is stably supported, thereby reducing the non-uniformity of assembly and controlling picture characteristics, thus greatly improving the quality of a cathode ray tube. The deflection coil includes a main coil comprising a screen portion, a neck portion and a body portion for connecting the screen portion to the neck portion, an auxiliary coil positioned at a center of the main coil, and connected to the neck portion at its lower ends to form a closed shape, and bridges for connecting an upper end of the auxiliary coil to the main coil to prevent movement of the auxiliary coil.

Abstract: Disclosed is a method for correcting inner pin distortion generated in the CRT product and deflection yoke thereof. According to the disclosed method and deflection yoke thereof, the additional circuit for suppressing inner pin distortion phenomenon on the screen is not required as the related art, reduction in manufacturing costs is possibly achieved. Also, as the circuit for suppressing pincushion is not used, power dissipation could be reduced, and instability in dispersion and characteristics of a pin in the middle portion due to increase of dispersion generation by a wiring of a coil could be resolved.

Abstract: The present invention provides a deflection yoke having function of compensating for pin distortions in a middle portion in order to improve pincushion in the middle portion by arranging magnetic element of reverse direction on a diagonal of a screen portion of a coil separator in the deflection yoke. According to the present invention, an additional circuit is not required as it is in a related art, for suppressing pincushion phenomenon in the middle portion on the screen, so production cost could be reduced and power dissipation could be lowered, for the circuit for suppressing pincushion is not used.