Abstract: A diode structure and a manufacturing method are disclosed. The diode structure includes a first metallic layer, a first-type conductive semiconductor layer, a second-type conductive semiconductor layer, a trench portion, and a second metallic layer. The first-type conductive semiconductor layer is formed on the first metallic layer. The second-type conductive semiconductor layer is formed on the first-type conductive semiconductor layer. The first-type conductive semiconductor layer and the second-type conductive semiconductor layer have opposite conductivity and a PN junction is formed therebetween. The trench portion is formed in the second-type conductive semiconductor layer and the first-type conductive semiconductor layer. A first contact surface is formed between the trench portion and the first-type conductive semiconductor layer, and a second contact surface is formed between the trench portion and the second-type conductive semiconductor layer.

Abstract: An intelligent monitoring system for care place is illustrated. The system includes a thermal camera capturing a thermal image of the care place; an image processing unit obtaining user's position and number of user according to region in which temperature is higher than a preset temperature in the thermal image; a temperature recording unit extracting and records user's temperature from the thermal image. When there is only one user, a abnormal event determining unit of the system determines whether an abnormal event occurs according to user's temperature changing rate. When there are several users, the abnormal event determining unit determines whether the abnormal event occurs according to both of the temperature changing rates of the users and an average temperature of the users. If the abnormal event occurs, the warning unit generates a warning signal.

Abstract: A wafer level package structure for temperature sensing elements, which includes a wafer cover and a substrate. The wafer cover is formed of infrared penetrable material. The wafer cover has a plurality of package walls, and the plurality of package walls form a plurality of first grooves and a plurality of second grooves in the wafer cover. The substrate includes a plurality of chip areas, a plurality of soldering areas, and a plurality of pin areas. The plurality of chip areas are disposed a temperature sensing chip respectively and correspond to the plurality of first grooves respectively and the plurality of soldering areas solder with respect to the plurality of package walls, such that the plurality of chip areas and the plurality of first grooves form a plurality of vacuum sealed spaces respectively.

Abstract: A device package method and structure thereof. The method includes steps of: providing a base and a cover, and placing a sensing device on the bottom of cavity base; placing sealant between the cover and edge part of the base, and then covering the cover on the base; irradiating a laser on the edge part for melting the sealant, so as to bond the cover and edge part; and enabling the sealed space formed between the cover and the cavity base to be in vacuum. Therefore, sensing element with high sensitivity can be packaged and manufactured efficiently.

Abstract: A wafer level package structure for temperature sensing elements, which includes a wafer cover and a substrate. The wafer cover is formed of infrared penetrable material. The wafer cover has a plurality of package walls, and the plurality of package walls form a plurality of first grooves and a plurality of second grooves in the wafer cover. The substrate includes a plurality of chip areas, a plurality of soldering areas, and a plurality of pin areas. The plurality of chip areas are disposed a temperature sensing chip respectively and correspond to the plurality of first grooves respectively and the plurality of soldering areas solder with respect to the plurality of package walls, such that the plurality of chip areas and the plurality of first grooves form a plurality of vacuum sealed spaces respectively.

Abstract: A device package method and structure thereof. The method includes steps of: providing a base and a cover, and placing a sensing device on the bottom of cavity base; placing sealant between the cover and edge part of the base, and then covering the cover on the base; irradiating a laser on the edge part for melting the sealant, so as to bond the cover and edge part; and enabling the sealed space formed between the cover and the cavity base to be in vacuum. Therefore, sensing element with high sensitivity can be packaged and manufactured efficiently.

Abstract: An intelligent monitoring system for care place is illustrated. The system includes a thermal camera capturing a thermal image of the care place; an image processing unit obtaining user's position and number of user according to region in which temperature is higher than a preset temperature in the thermal image; a temperature recording unit extracting and records user's temperature from the thermal image. When there is only one user, a abnormal event determining unit of the system determines whether an abnormal event occurs according to user's temperature changing rate. When there are several users, the abnormal event determining unit determines whether the abnormal event occurs according to both of the temperature changing rates of the users and an average temperature of the users. If the abnormal event occurs, the warning unit generates a warning signal.

Abstract: A care service transaction method and system thereof. The method includes the following steps: first, a thermal camera and a control apparatus are disposed in a care place. Health data of the user is then received, and a care condition is determined based on the health data, and a transaction amount is determined based on the care condition. The control apparatus is set to control the thermal camera based on the care condition, upon reception of paid information. Therefore, the user can buy suitable intelligent care service, such as care in various time periods, various areas or various care levels, upon his/her demand.

Abstract: A method of wafer exposure with correction feedback. The method includes the steps of using a first group of parameters to expose the first wafer to transfer a pattern of a first layer, using a second group of parameters to perform overlay alignment of the pattern of the first layer with a pattern of a second layer for the first wafer, measuring the first wafer to obtain a first and second correction respectively for the first and second parameter groups correcting the first group with the first correction and using the corrected parameters to expose the second wafer to transfer the pattern of the first layer, and correcting the second group with the second correction and using the corrected parameters to perform overlay alignment of the pattern of the first layer with the pattern of the second layer for the second wafer.

Abstract: A method of wafer exposure with correction feedback. The method comprises the steps of providing a first and second wafer, using a first group of parameters to expose the first wafer to transfer a pattern of a first layer to the first wafer, using a second group of parameters to perform overlay alignment of the pattern of the first layer with a pattern of a second layer for the first wafer, performing measurement of the first wafer to obtain a first and second correction respectively for the first and second group of the parameters, correcting the first group of the parameters with the first correction and using the first group of the corrected parameters to expose the second wafer to transfer the pattern of the first layer to the second wafer, and correcting the second group of the parameters with the second correction and using the second group of the corrected parameters to perform overlay alignment of the pattern of the first layer with the pattern of the second layer for the second wafer.