Abstract: A method for fabricating a semiconductor device includes stacking a semiconductor layer, a first sacrificial layer, and a second sacrificial layer, patterning the second sacrificial layer to form a second sacrificial pattern, forming a spacer pattern on both sides of the second sacrificial pattern, wherein a pitch of the spacer pattern is constant, and a width of the spacer pattern is constant, removing the second sacrificial pattern, forming a mask layer that covers the spacer pattern, forming a supporting pattern on the mask layer, wherein a width of the supporting pattern is greater than a width of the spacer pattern, and the supporting pattern is overlapped with the spacer pattern, transferring the supporting pattern and the spacer pattern onto the first sacrificial layer to form gate and supporting patterns, and transferring the gate and supporting patterns onto the semiconductor layer to form a gate and a supporting gate.

Abstract: An exposure apparatus and manufacturing methods using the exposure apparatus are disclosed. An exposure apparatus includes a light source system generating light, an optical system controlling and patterning the light, a substrate system on which an exposure process is performed on a substrate by the patterned light, and a control unit controlling the light source system, the optical system and the substrate system. The optical system includes a chamber, a reflection member disposed in the chamber to control the light, and a first on-off valve installed on one side of the chamber opposite to the substrate system. The control unit controls the optical system such that the first on-off valve is opened during the exposure process and is closed during a cleaning process performed to the inside of the chamber.

Abstract: A method for fabricating a semiconductor device includes stacking a semiconductor layer, a first sacrificial layer, and a second sacrificial layer, patterning the second sacrificial layer to form a second sacrificial pattern, forming a spacer pattern on both sides of the second sacrificial pattern, wherein a pitch of the spacer pattern is constant, and a width of the spacer pattern is constant, removing the second sacrificial pattern, forming a mask layer that covers the spacer pattern, forming a supporting pattern on the mask layer, wherein a width of the supporting pattern is greater than a width of the spacer pattern, and the supporting pattern is overlapped with the spacer pattern, transferring the supporting pattern and the spacer pattern onto the first sacrificial layer to form gate and supporting patterns, and transferring the gate and supporting patterns onto the semiconductor layer to form a gate and a supporting gate.

Abstract: An exposure apparatus and manufacturing methods using the exposure apparatus are disclosed. An exposure apparatus includes a light source system generating light, an optical system controlling and patterning the light, a substrate system on which an exposure process is performed on a substrate by the patterned light, and a control unit controlling the light source system, the optical system and the substrate system. The optical system includes a chamber, a reflection member disposed in the chamber to control the light, and a first on-off valve installed on one side of the chamber opposite to the substrate system. The control unit controls the optical system such that the first on-off valve is opened during the exposure process and is closed during a cleaning process performed to the inside of the chamber.

Abstract: Provided herein are gettering members that include a monitor substrate and a conditioning layer thereon. Also provided herein are methods of forming gettering layers and methods of performing immersion lithography processes using the same.

Abstract: Provided herein are gettering members that include a monitor substrate and a conditioning layer thereon. Also provided herein are methods of forming gettering layers and methods of performing immersion lithography processes using the same.

Abstract: Provided is a method of forming a fine pattern using a block copolymer. The method comprises forming a coating layer including a block copolymer having a plurality of repeating units on a substrate. A mold is provided having a first pattern comprising a plurality of ridges and valleys. The first pattern is transferred from the mold into the coating layer. Then, a self-assembly structure is formed comprising a plurality of polymer blocks aligned in a direction guided by the ridges and valleys of the mold thereby rearranging the repeating units of the block copolymer within the coating layer by phase separation while the coating layer is located within the valleys of the mold. A portion of the polymer blocks are removed from among the plurality of polymer blocks and a self-assembly fine pattern of remaining polymer blocks is formed.

Abstract: Provided herein are gettering members that include a monitor substrate and a conditioning layer thereon. Also provided herein are methods of forming gettering layers and methods of performing immersion lithography processes using the same.