Patents by Inventor Yun-Lin Wu

Yun-Lin Wu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11392745
    Abstract: A method of manufacturing an integrated circuit (IC) includes receiving a layout of the IC having a first region interposed between two second regions. The layout includes a first layer having first features and second and third layer having second and third features in the first region. The second and third features collectively form cut patterns for the first features. The method further includes modifying the second and third features by a mask house tool, resulting in modified second and third features, which collectively form modified cut patterns for the first features. The modifying of the second and third features meets at least one of following conditions: total spacing between adjacent modified second (third) features is greater than total spacing between adjacent second (third) features, and total length of the modified second (third) features is smaller than total length of the second (third) features.
    Type: Grant
    Filed: November 30, 2020
    Date of Patent: July 19, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yun-Lin Wu, Cheng-Cheng Kuo, Chia-Ping Chiang, Chih-Wei Hsu, Hua-Tai Lin, Kuei-Shun Chen, Yuan-Hsiang Lung, Yan-Tso Tsai
  • Publication number: 20210089697
    Abstract: A method of manufacturing an integrated circuit (IC) includes receiving a layout of the IC having a first region interposed between two second regions. The layout includes a first layer having first features and second and third layer having second and third features in the first region. The second and third features collectively form cut patterns for the first features. The method further includes modifying the second and third features by a mask house tool, resulting in modified second and third features, which collectively form modified cut patterns for the first features. The modifying of the second and third features meets at least one of following conditions: total spacing between adjacent modified second (third) features is greater than total spacing between adjacent second (third) features, and total length of the modified second (third) features is smaller than total length of the second (third) features.
    Type: Application
    Filed: November 30, 2020
    Publication date: March 25, 2021
    Inventors: Yun-Lin Wu, Cheng-Cheng Kuo, Chia-Ping Chiang, Chih-Wei Hsu, Hua-Tai Lin, Kuei-Shun Chen, Yuan-Hsiang Lung, Yan-Tso Tsai
  • Patent number: 10853552
    Abstract: A method of manufacturing an integrated circuit (IC) includes receiving a layout of the IC having a first region interposed between two second regions. The layout includes a first layer having first features and second and third layer having second and third features in the first region. The second and third features collectively form cut patterns for the first features. The method further includes modifying the second and third features by a mask house tool, resulting in modified second and third features, which collectively form modified cut patterns for the first features. The modifying of the second and third features meets at least one of following conditions: total spacing between adjacent modified second (third) features is greater than total spacing between adjacent second (third) features, and total length of the modified second (third) features is smaller than total length of the second (third) features.
    Type: Grant
    Filed: May 6, 2019
    Date of Patent: December 1, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yun-Lin Wu, Cheng-Cheng Kuo, Chia-Ping Chiang, Chih-Wei Hsu, Hua-Tai Lin, Kuei-Shun Chen, Yuan-Hsiang Lung, Yan-Tso Tsai
  • Publication number: 20190258770
    Abstract: A method of manufacturing an integrated circuit (IC) includes receiving a layout of the IC having a first region interposed between two second regions. The layout includes a first layer having first features and second and third layer having second and third features in the first region. The second and third features collectively form cut patterns for the first features. The method further includes modifying the second and third features by a mask house tool, resulting in modified second and third features, which collectively form modified cut patterns for the first features. The modifying of the second and third features meets at least one of following conditions: total spacing between adjacent modified second (third) features is greater than total spacing between adjacent second (third) features, and total length of the modified second (third) features is smaller than total length of the second (third) features.
    Type: Application
    Filed: May 6, 2019
    Publication date: August 22, 2019
    Inventors: Yun-Lin Wu, Cheng-Cheng Kuo, Chia-Ping Chiang, Chih-Wei Hsu, Hua-Tai Lin, Kuei-Shun Chen, Yuan-Hsiang Lung, Yan-Tso Tsai
  • Patent number: 10282504
    Abstract: A method of manufacturing an integrated circuit (IC) includes receiving a layout of the IC having a first region interposed between two second regions. The layout includes a first layer having first features and second and third layer having second and third features in the first region. The second and third features collectively form cut patterns for the first features. The method further includes modifying the second and third features by a mask house tool, resulting in modified second and third features, which collectively form modified cut patterns for the first features. The modifying of the second and third features meets at least one of following conditions: total spacing between adjacent modified second (third) features is greater than total spacing between adjacent second (third) features, and total length of the modified second (third) features is smaller than total length of the second (third) features.
    Type: Grant
    Filed: January 20, 2017
    Date of Patent: May 7, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yun-Lin Wu, Cheng-Cheng Kuo, Chia-Ping Chiang, Chih-Wei Hsu, Hua-Tai Lin, Kuei-Shun Chen, Yuan-Hsiang Lung, Yan-Tso Tsai
  • Publication number: 20180096090
    Abstract: A method of manufacturing an integrated circuit (IC) includes receiving a layout of the IC having a first region interposed between two second regions. The layout includes a first layer having first features and second and third layer having second and third features in the first region. The second and third features collectively form cut patterns for the first features. The method further includes modifying the second and third features by a mask house tool, resulting in modified second and third features, which collectively form modified cut patterns for the first features. The modifying of the second and third features meets at least one of following conditions: total spacing between adjacent modified second (third) features is greater than total spacing between adjacent second (third) features, and total length of the modified second (third) features is smaller than total length of the second (third) features.
    Type: Application
    Filed: January 20, 2017
    Publication date: April 5, 2018
    Inventors: Yun-Lin Wu, Cheng-Cheng Kuo, Chia-Ping Chiang, Chih-Wei Hsu, Hua-Tai Lin, Kuei-Shun Chen, Yuan-Hsiang Lung, Yan-Tso Tsai
  • Patent number: 5258088
    Abstract: A golf grip assembly process which includes coating a sleeve with a layer of soluble phenol-acetaldehyde resin over the inner surface thereof, and spraying a solvent over the layer of soluble phenol-acetaldehyde resin with before the insertion of a rod for the grip. The soluble phenol-acetaldehyde resin is dissolved by the solvent into a glue to fixedly secure the rod inside the sleeve, after the insertion of the rod into the sleeve and after the setting of the glue, so that the rod and the sleeve are incorporated into a unitary golf grip assembly.
    Type: Grant
    Filed: December 2, 1991
    Date of Patent: November 2, 1993
    Inventor: Yun-Lin Wu