Patents by Inventor Yun Liu

Yun Liu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250151114
    Abstract: Embodiments of this application provide a communication method: A first terminal device sends first information to at least one second terminal device, to indicate the at least one second terminal device to perform feedback. The first terminal device receives a feedback of a third terminal device, where the third terminal device is a terminal device that is in the at least one second terminal device and that has performed feedback. The first terminal device sends first resource indication information, to indicate a first resource, where the first resource is for the third terminal device to perform transmission, and the first resource is included in a channel occupancy time COT preempted by the first terminal device. A UE 1 allocates a COT resource to a UE 2 that has performed feedback. This can reduce resource waste, avoid COT interruption, improve spectrum resource utilization and improve system transmission performance.
    Type: Application
    Filed: January 13, 2025
    Publication date: May 8, 2025
    Inventors: Yun LIU, Ruicheng JIAO, Lixia XUE
  • Publication number: 20250151032
    Abstract: This application relates to a resource selection method and a first terminal. The method includes: before determining a first transmission resource used to transmit a first transport block, a first terminal determines first duration required by the first terminal to perform first LBT, and determines an unavailable resource in a resource selection window based on the first duration; and/or determines second duration required by a second terminal to perform second LBT, and determines an unavailable resource in the resource selection window based on the second duration. The first terminal selects the first transmission resource based on at least one of the first unavailable resource or the second unavailable resource.
    Type: Application
    Filed: January 10, 2025
    Publication date: May 8, 2025
    Inventors: Ruicheng Jiao, Hongli He, Yun Liu, Xueru Li, Lixia Xue
  • Publication number: 20250151115
    Abstract: Embodiments of this application provide a resource configuration method and a device. According to this method, a first terminal device may reserve N resources based on listen before talk LBT durations corresponding to N transmission requirements. Because the LBT durations are considered, cases in which an LBT duration of a transmission requirement has not ended when a resource corresponding to the transmission requirement arrives can be reduced, so that a probability that the first terminal device can transmit data on the resource corresponding to the transmission requirement can be increased, thereby ensuring communication efficiency of the terminal device.
    Type: Application
    Filed: January 13, 2025
    Publication date: May 8, 2025
    Inventors: Yun LIU, Chao LI
  • Patent number: 12288241
    Abstract: The disclosure provides a method and apparatus for presenting recommendation data, a computer device, and a storage medium. The method includes: presenting a first search middle page in response to a trigger operation on a search box in a target page; obtaining commodity information of a related commodity of a target commodity presented in the target page; and presenting the commodity information of the related commodity in a preset area of the first search middle page.
    Type: Grant
    Filed: June 26, 2024
    Date of Patent: April 29, 2025
    Assignee: BEIJING BYTEDANCE NETWORK TECHNOLOGY CO., LTD.
    Inventor: Yun Liu
  • Publication number: 20250130216
    Abstract: A rapid monitoring and discrimination method for drought conditions in summer maize based on chlorophyll content includes: 1) Obtaining multi-spectral imagery through UAV multi-payload low-altitude remote sensing technology and measuring chlorophyll content on the ground. Additionally, calculating vegetation indices including Normalized Difference Vegetation Index (NDVI), Soil-Adjusted Vegetation Index (SAVI), and Renormalized Difference Vegetation Index (RENDVI). 2) Selecting vegetation indices and constructing regression equations with measured chlorophyll content during different growth stages. The regression equation with the highest correlation for each growth stage is chosen as the optimal model equation for that particular stage. 3) Using the optimal model equations to retrieve chlorophyll content for each period and determining thresholds for chlorophyll content across different drought levels through calibration.
    Type: Application
    Filed: December 23, 2024
    Publication date: April 24, 2025
    Inventors: Wenlong SONG, Mengyi LI, Changjun LIU, Pu ZHOU, Lang YU, Yizhu LU, Yun LIU, Wenjing LU, Xiuhua CHEN, Long CHEN
  • Patent number: 12281047
    Abstract: Disclosed is a low temperature co-fired dielectric material with an adjustable dielectric constant, wherein it comprises a zirconia main phase and a silicon-based amorphous filler, a weight ratio of the zirconia main phase to the silicon-based amorphous filler is 40-65:35-60; a weight percentage of SiO2 in the silicon-based amorphous filler is ?50%. The dielectric constant of low temperature co-fired dielectric material can be continuously adjusted in a wide range of 7-12, the dielectric loss can be as low as 0.1% at 1 MHz. The material system can be sintered at 800-900° C. and co-fired with silver electrode. It can be used as the low temperature co-fired dielectric material. The invention also discloses a method for preparing the low temperature co-fired dielectric material with an adjustable dielectric constant.
    Type: Grant
    Filed: May 3, 2021
    Date of Patent: April 22, 2025
    Assignee: GUANGDONG FENGHUA ADVANCED TECHNOLOGY HOLDING CO., LTD.
    Inventors: Shiwo Ta, Xiaozhou Wang, Tao Chen, Yun Liu, Terry James Frankcombe, Zhenxiao Fu, Xiuhua Cao, Chunyuan Hu
  • Patent number: 12276031
    Abstract: A device and a method for fabricating a ceramic reinforced composite coating based on plasma remelting and injection. The device includes a plasma cladding assembly, a powder feeding assembly, a metal-based substrate, and a thermal infrared imager. The plasma cladding assembly comprises a plasma gun and a plasma generator. A plasma arc generated is used to heat the substrate and form a molten pool on the substrate. The powder feeding assembly comprises a powder feeder configured to feed ceramic particles to the molten pool through a powder feeding copper tube. The thermal infrared imager is configured to acquire an infrared image of the molten pool and acquire an optimal injection position of the ceramic particles according to the infrared image. The optimal injection position is a midpoint between a trailing edge of the plasma arc emitted on the substrate and a trailing edge of the molten pool.
    Type: Grant
    Filed: November 10, 2021
    Date of Patent: April 15, 2025
    Assignee: HEFEI UNIVERSITY OF TECHNOLOGY
    Inventors: Haihong Huang, Hongmeng Xu, Lunwu Zhao, Yun Liu, Zhifeng Liu
  • Publication number: 20250117893
    Abstract: An example computer-implemented method for self-supervised training of an image processing model for histopathology images is provided. The example method includes obtaining a reference histopathology image; generating an augmented histopathology image, wherein generating the augmented histopathology image comprises performing, for an input image, at least one of the following augmentations: applying a blur to the input image and injecting noise artifacts into the blurred input image; or cropping a plurality of portions from the input image, wherein the plurality of portions are determined based on a minimum overlap criterion that has been updated over one or more iterations; and training the image processing model based on a similarity of latent representations generated by the image processing model respectively for the reference histopathology image and the augmented histopathology image.
    Type: Application
    Filed: October 7, 2024
    Publication date: April 10, 2025
    Inventors: David Steiner, Ellery Alyosha Wulczyn, Po-Hsuan Chen, Ronnachai Jaroensri, Supriya Vijay, Jeremy Lai, Saloni Agarwal, Yun Liu, Faruk Ahmed
  • Publication number: 20250112234
    Abstract: The present application relates to the field of lithium-ion batteries and discloses a lithium-ion battery cathode material, a preparation method thereof, and a lithium-ion battery. A ratio of surface Ni3+ content of the cathode material to internal Ni3+ content of the cathode material is (0.95 to 1):1, and a content of disordering nickel in the cathode material is less than or equal to 3%. The lithium-ion battery cathode material has the similar surface Ni3+ content and internal Ni3+ content, and has a low content of disordering nickel, thereby avoiding the generation of a NiO passivation layer in the cathode material and reducing the phenomenon of loss of surface active lithium. The lithium-ion battery containing such a cathode material has improved capacity, rate capacity, and cycle performance.
    Type: Application
    Filed: December 9, 2024
    Publication date: April 3, 2025
    Inventors: Yun LIU, Jingpeng WANG, Yaqi WANG, Hang ZHANG, Xuequan ZHANG, Yafei LIU, Yanbin CHEN
  • Publication number: 20250098527
    Abstract: The present disclosure relates to an organic compound, an electronic element and an electronic apparatus. The structure of the organic compound is as shown in Formula 1. The organic compound can improve the performance of the electronic element and the electronic apparatus.
    Type: Application
    Filed: December 7, 2022
    Publication date: March 20, 2025
    Inventors: Qiqi NIE, Youngkook KIM, Yun LIU
  • Patent number: 12252763
    Abstract: The present disclosure provides a ZA4 alloy and a preparation method and use thereof, and relates to the technical field of pure zirconium materials. In the present disclosure, the ZA4 alloy includes the following components by mass fraction: 0.2% to 0.6% of Fe, 0.1% to 0.3% of O, 0.5% to 4% of Hf, and Zr as a balance. The Fe and O with a trace amount make a grain size of the ZA4 alloy significantly refined during smelting and cooling, and inhibit growth of a grains during thermal deformation and heat treatment. The Hf is a neutral element, and shows an obvious solid solution strengthening effect in an a phase. The ZA4 alloy obtained by strictly controlling a content of each element has higher strength and plasticity. The preparation method has simple operations and a low production cost, and is suitable for industrial production.
    Type: Grant
    Filed: September 18, 2023
    Date of Patent: March 18, 2025
    Assignee: Metasdi Materials Technology Qinhuangdao Co., Ltd.
    Inventors: Yuxing Guo, Yun Liu, Riping Liu, Bo Li
  • Publication number: 20250089348
    Abstract: A semiconductor device includes a bipolar junction transistor (BJT) structure including emitters in a first well having a first conductive type, collectors in respective second wells, the second wells having a second conductive type different from the first conductive type and being spaced apart from each other with the first well therebetween, and bases in the first well and between the emitters and the collectors. The BJT structure includes active regions having different widths that form the emitters, the collectors, and the bases.
    Type: Application
    Filed: November 21, 2024
    Publication date: March 13, 2025
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chia-Chung CHEN, Szu-Lin LIU, Jaw-Juinn HORNG, Hui-Zhong ZHUANG, Chih-Liang CHEN, Ya Yun LIU
  • Patent number: 12245165
    Abstract: This application provides a communications method and apparatus. According to the method, a receiving terminal receives, from one or more sending terminals, X PSSCHs that are in a one-to-one correspondence with X PSFCH resources, determines M PSFCH resources based on priorities of the X PSFCH resources, transmit power corresponding to the X PSFCH resources, and total transmit power of the receiving terminal, and sends feedback information to some or all of the one or more sending terminals on the M PSFCH resources, so that the receiving terminal can send the M PSFCH resources based on a sending capability (namely, the total transmit power) of the receiving terminal. This improves overall performance of a network system.
    Type: Grant
    Filed: September 10, 2020
    Date of Patent: March 4, 2025
    Assignee: HUAWEI TECHNOLOGIES CO., LTD.
    Inventors: Yun Liu, Jian Wang
  • Publication number: 20250054130
    Abstract: A wafer map recognition method using artificial intelligence includes obtaining wafer maps of a plurality of wafers; performing an unsupervised algorithm on the wafer map of each wafer in the plurality of wafers to generate a feature data set for the corresponding wafer map; and performing a clustering algorithm according to a plurality of feature data sets for the plurality of wafer maps to find a wafer map with a potential defect.
    Type: Application
    Filed: August 9, 2024
    Publication date: February 13, 2025
    Applicant: MEDIATEK INC.
    Inventors: En Jen, Shao-Yun Liu, Yi-Ju Ting, Chin-Tang Lai, Chia-Shun Yeh, Ching-Yu Lin, Ching-Han Jan, Po-Hsuan Huang
  • Patent number: 12204281
    Abstract: A holographic display and method for operating the holographic display can include: a holographic display operable in a plurality of modes, a computing system, and a sensor. The holographic display can option include a user interface device. Views displayed by the display can optionally be processed or modified based on a viewer pose relative to the display.
    Type: Grant
    Filed: July 24, 2023
    Date of Patent: January 21, 2025
    Assignee: Looking Glass Factory, Inc.
    Inventors: Alexis Hornstein, Kyle Appelgate, Lee Shiu Pong, Shi Yun Liu, Shawn Michael Frayne
  • Patent number: 12185292
    Abstract: A communications method and a terminal device are disclosed. The communications method includes: receiving, by a transmit terminal, configuration information from a network device, wherein the configuration information comprises resource pool information of a sidelink of the transmit terminal, the resource pool information comprises information about one or more resource pools, and information about one resource pool comprises one or more pieces of information about a PSFCH frequency domain resource; sending, by the transmit terminal, multicast data to receive terminals in a multicast group; and receiving, by the transmit terminal, feedback information of the multicast data from the receive terminals in the multicast group on the PSFCH frequency domain resource, wherein the PSFCH frequency domain resource is sufficient for all the receive terminals in the multicast group to perform HARQ feedback.
    Type: Grant
    Filed: September 4, 2020
    Date of Patent: December 31, 2024
    Assignee: HUAWEI TECHNOLOGIES CO., LTD.
    Inventors: Yun Liu, Jian Wang
  • Patent number: 12176346
    Abstract: A semiconductor device includes a bipolar junction transistor (BJT) structure including emitters in a first well having a first conductive type, collectors in respective second wells, the second wells having a second conductive type different from the first conductive type and being spaced apart from each other with the first well therebetween, and bases in the first well and between the emitters and the collectors. The BJT structure includes active regions having different widths that form the emitters, the collectors, and the bases.
    Type: Grant
    Filed: May 30, 2022
    Date of Patent: December 24, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chia-Chung Chen, Szu-Lin Liu, Jaw-Juinn Horng, Hui-Zhong Zhuang, Chih-Liang Chen, Ya Yun Liu
  • Patent number: 12159904
    Abstract: The present disclosure describes structure with a substrate, a first well region, a second well region, and a third well region. The first well region is in the substrate. The second well region is in the first well region and includes a first source/drain (S/D) region. The third well region is in the substrate and adjacent to the first well region. The third well region includes a second S/D region, where a spacing between the first and second S/D regions is less than about 3 ?m.
    Type: Grant
    Filed: November 10, 2021
    Date of Patent: December 3, 2024
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chia-Chung Chen, Tsung-Hsin Yu, Chung-Hui Chen, Hui-Zhong Zhuang, Ya Yun Liu
  • Patent number: 12152070
    Abstract: The present invention provides a PTX3 monoclonal antibody or antibody Fab fragment thereof and use thereof. The aforementioned monoclonal antibody or antibody Fab fragment thereof specifically inhibit or slow down the binding of PTX3 to the PTX3 receptor, and may be used for a kit and method for detecting PTX3, and a pharmaceutical composition which inhibits or slows down diseases or symptoms associated with PTX3 and PTX3 receptor binding, and a use thereof.
    Type: Grant
    Filed: September 13, 2019
    Date of Patent: November 26, 2024
    Assignee: Ohealth Biopharmaceutical (Suzhou) Co., Ltd.
    Inventors: Ju-Ming Wang, I-Chen Lee, Yu-Wei Hsiao, Jhih-Ying Chi, Jyun-yi Du, Hsin-Yin Liang, Chao-chun Cheng, Chiung-Yuan Ko, Feng-Wei Chen, Jhih-Yun Liu
  • Publication number: 20240387522
    Abstract: A semiconductor device includes a bipolar junction transistor (BJT) structure including emitters in a first well having a first conductive type, collectors in respective second wells, the second wells having a second conductive type different from the first conductive type and being spaced apart from each other with the first well therebetween, and bases in the first well and between the emitters and the collectors. The BJT structure includes active regions having different widths that form the emitters, the collectors, and the bases.
    Type: Application
    Filed: July 30, 2024
    Publication date: November 21, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chia-Chung CHEN, Szu-Lin LIU, Jaw-Juinn HORNG, Hui-Zhong ZHUANG, Chih-Liang CHEN, Ya Yun LIU