Patents by Inventor Yun-Ming Lo
Yun-Ming Lo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11870010Abstract: A light-emitting diode includes an N-type cladding layer, and a superlattice structure, an active layer, a P-type electron-blocking layer, and a P-type cladding layer disposed on the N-type cladding layer in such order. The superlattice structure includes at least one first layered element which has a sub-layer made of a nitride-based semiconductor material including Al, and having an energy band gap greater than that of said electron-blocking layer. The P-type electron-blocking layer is made of a nitride-based semiconductor material including Al, and has an energy band gap greater than that of the P-type cladding layer.Type: GrantFiled: March 31, 2022Date of Patent: January 9, 2024Assignee: Xiamen San'An Optoelectronics Co., Ltd.Inventors: Wen-Yu Lin, Meng-Hsin Yeh, Yun-Ming Lo, Chien-Yao Tseng, Chung-Ying Chang
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Publication number: 20230122025Abstract: A semiconductor light emitting device includes an epitaxial light emitting structure that includes a light emitting component. The light emitting component includes a multiple quantum well structure which contains a plurality of first periodic layered elements, each of which includes first, second and third layers alternately stacked on one another. For each of the first periodic layered elements, the first, second and third layers respectively have first, second and third energy bandgaps (Eg1, Eg2, Eg3) that satisfy a relationship of Eg1<Eg2<Eg3. The third layer has a thickness smaller than that of the first layer. Also disclosed herein is another embodiment of the aforementioned semiconductor light emitting device.Type: ApplicationFiled: December 16, 2022Publication date: April 20, 2023Inventors: Wen-Yu LIN, Meng-Hsin YEH, Yun-Ming LO, Chien-Yao TSENG, Chung-Ying CHANG
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Patent number: 11538960Abstract: An epitaxial light emitting structure includes n-type and p-type semiconductor layers, and a light emitting component disposed therebetween. The light emitting component includes a multiple quantum well structure which contains a plurality of first periodic layered elements, each of which includes first, second and third layers alternately stacked on one another. For each of the first periodic layered elements, the first, second and third layers respectively have a first energy bandgap (Eg1), a second energy bandgap (Eg2), and a third energy bandgap (Eg3) that satisfy a relationship of Eg1<Eg2<Eg3. Also disclosed herein is a light emitting diode which includes the aforementioned epitaxial light emitting structure.Type: GrantFiled: November 12, 2020Date of Patent: December 27, 2022Assignee: XIAMEN SAN'AN OPTOELECTRONICS CO., LTDInventors: Wen-Yu Lin, Meng-Hsin Yeh, Yun-Ming Lo, Chien-Yao Tseng, Chung-Ying Chang
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Publication number: 20220223758Abstract: A light-emitting diode includes an N-type cladding layer, and a superlattice structure, an active layer, a P-type electron-blocking layer, and a P-type cladding layer disposed on the N-type cladding layer in such order. The superlattice structure includes at least one first layered element which has a sub-layer made of a nitride-based semiconductor material including Al, and having an energy band gap greater than that of said electron-blocking layer. The P-type electron-blocking layer is made of a nitride-based semiconductor material including Al, and has an energy band gap greater than that of the P-type cladding layer.Type: ApplicationFiled: March 31, 2022Publication date: July 14, 2022Inventors: Wen-Yu LIN, Meng-Hsin YEH, Yun-Ming LO, Chien-Yao TSENG, Chung-Ying CHANG
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Patent number: 11296256Abstract: A light-emitting diode includes an N-type cladding layer, and a superlattice structure, an active layer, a P-type electron-blocking layer, and a P-type cladding layer disposed on the N-type cladding layer in such order. The superlattice structure includes at least one first layered element which has first, second, and third sub-layers that are stacked on one another in a direction away from the N-type cladding layer. The first, second, and third sub-layers have energy band gaps Eg1, Eg2, and Eg3 which satisfy a relationship of Eg1<Eg2<Eg3. In addition, Eg3 is greater than an energy band gap of the P-type electron-blocking layer.Type: GrantFiled: May 26, 2020Date of Patent: April 5, 2022Assignee: Xiamen San'An Optoelectronics Co., Ltd.Inventors: Wen-Yu Lin, Meng-Hsin Yeh, Yun-Ming Lo, Chien-Yao Tseng, Chung-Ying Chang
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Publication number: 20220013685Abstract: An epitaxial light emitting structure includes n-type and p-type semiconductor layers, and a light emitting component disposed therebetween. The light emitting component includes a multiple quantum well structure which contains a plurality of first periodic layered elements, each of which includes first, second and third layers alternately stacked on one another. For each of the first periodic layered elements, the first, second and third layers respectively have a first energy bandgap (Eg1), a second energy bandgap (Eg2), and a third energy bandgap (Eg3) that satisfy a relationship of Eg1<Eg2<Eg3. Also disclosed herein is a light emitting diode which includes the aforementioned epitaxial light emitting structure.Type: ApplicationFiled: November 12, 2020Publication date: January 13, 2022Inventors: WEN-YU LIN, MENG-HSIN YEH, YUN-MING LO, CHIEN-YAO TSENG, CHUNG-YING CHANG
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Publication number: 20210066542Abstract: An epitaxial light emitting structure includes n-type and p-type semiconductor layers, and a light emitting component disposed therebetween. The light emitting component includes a multiple quantum well structure which contains a plurality of first periodic layered elements, each of which includes first, second and third layers alternately stacked on one another. For each of the first periodic layered elements, the first, second and third layers respectively have a first energy bandgap (Eg1), a second energy bandgap (Eg2), and a third energy bandgap (Eg3) that satisfy a relationship of Eg1<Eg2<Eg3. Also disclosed herein is a light emitting diode which includes the aforementioned epitaxial light emitting structure.Type: ApplicationFiled: November 12, 2020Publication date: March 4, 2021Inventors: WEN-YU LIN, MENG-HSIN YEH, YUN-MING LO, CHIEN-YAO TSENG, CHUNG-YING CHANG
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Publication number: 20200287083Abstract: A light-emitting diode includes an N-type cladding layer, and a superlattice structure, an active layer, a P-type electron-blocking layer, and a P-type cladding layer disposed on the N-type cladding layer in such order. The superlattice structure includes at least one first layered element which has first, second, and third sub-layers that are stacked on one another in a direction away from the N-type cladding layer. The first, second, and third sub-layers have energy band gaps Eg1, Eg2, and Eg3 which satisfy a relationship of Eg1<Eg2<Eg3. In addition, Eg3 is greater than an energy band gap of the P-type electron-blocking layer.Type: ApplicationFiled: May 26, 2020Publication date: September 10, 2020Inventors: WEN-YU LIN, MENG-HSIN YEH, YUN-MING LO, CHIEN-YAO TSENG, CHUNG-YING CHANG
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Patent number: 9691668Abstract: A wafer carrier comprises a supporting body having an opening therein, wherein said opening in said supporting body has a concave sidewall and a bottom surface in said supporting body which is curved in cross section; a plurality of vertical supporting rods configured to support and contact a wafer received in said opening and to displace said wafer from the bottom surface of the opening in said supporting body; wherein one of said supporting rods has an end for contacting and supporting said wafer; and wherein when viewing from a top view of the wafer carrier, one of said supporting rods has a base lining on the concave sidewall of said opening in said supporting body, a first concave side opposite to the base and two second concave sides connecting the base and the first concave side.Type: GrantFiled: October 11, 2012Date of Patent: June 27, 2017Assignee: EPISTAR CORPORATIONInventors: Chung-Ying Chang, Yun-Ming Lo, Chi Shen, Ying-Chan Tseng
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Publication number: 20140102372Abstract: A wafer carrier comprises a supporting body having a height and comprising an opening, wherein a bottom surface of the opening is a curved surface; and a plurality of supporting rods formed around a periphery of the supporting body. Another aspect of the present application provides a manufacturing method of the wafer carrier. The method comprises forming an epitaxial layer on a growth substrate to form a wafer structure; measuring a curvature radius of the wafer structure; and providing the wafer carrier described above in accordance with the curvature radius of the wafer structure.Type: ApplicationFiled: June 7, 2013Publication date: April 17, 2014Inventors: Chung-Ying Chang, Yun-Ming Lo, Chi Shen, Ying-Chan Tseng