Abstract: A metal mask and an inspecting method thereof are provided for improving quality standard detection. The metal mask has a first and a second long side and plural pattern regions. The method includes the followings steps Based on the pattern regions adjacent to the first and second long sides, a first and a second reference straight line adjacent to the first and second long sides respectively are defined. Then, a first maximum offset length between the pattern regions and the first reference straight line is measured. A second maximum offset length between the pattern regions and the second reference straight line is measured. When a difference between the first and second maximum offset lengths is less than or equal to 20 ?m, the metal mask is determined to meet an inspecting standard.

Abstract: A metal mask has a first surface, a second surface opposite to the first surface, first and second openings provided on the first and second surfaces respectively, and first and second through holes communicating with the first and second openings respectively. The juncture of the first and second through holes further has an annular protrusion. The mask satisfies the in equations: 1 ? ?m 2 < 1 2 × W × H < 15 ? ?m 2 ? and ? 30 ? ° < ? < 65 ? ° , wherein W is the horizontal distance between an edge of the first opening and an imaginary connecting line passing through an edge of the second opening and an end edge of the annular protrusion, H is the vertical distance between the end edge of the annular protrusion and the first surface, and ? is the included angle between the imaginary connecting line and an imaginary extending plane of the first surface. The metal mask is effective in reducing shadow effect, thereby improving evaporation quality.

Abstract: The present invention provides a transdermally deliverable microneedle patch, a manufacturing mold therefor, and a manufacturing method therefor. The transdermally deliverable microneedle patch includes: a basal layer for attaching to an epidermis, and a microneedle array and a bump array arranged on the basal layer. The microneedle array includes a plurality of microneedles that protrude and extend away from the basal layer. The microneedles are made of a predetermined medicament and a first dissolvable carrier component, and diameters of ends of the microneedles opposite to the basal layer are less than 50 ?m. The bump array includes a plurality of bumps that protrude and extend away from the basal layer. Diameters of ends of the bumps opposite to the basal layer are greater than 50 ?m. The bumps are arranged at intervals along a periphery of the microneedle array, and heights by which the bumps protrude from the basal layer are less than heights by which the microneedles protrude from the basal layer.

Abstract: A method of fabricating a metal mask includes receiving a conductive substrate with a first surface, a second surface opposite to the first surface, a third surface connecting the first and second surfaces, and a fourth surface opposite to the third surface and connecting the first and second surfaces. The method further includes forming trenches in a direction from the first surface to the second surface and protrusions in the conductive substrate. The trenches and the protrusions are alternately arranged. The method further includes filling the trenches with an insulation material covering a first area of the protrusions, forming a metal layer on the conductive substrate overlying a second area different from the first area of the protrusions, removing the insulation material, and removing the conductive substrate. The metal layer becomes a metal mask with a three-dimensional structure including strip-shaped structures.

Abstract: A method of fabricating a metal mask includes receiving a metal planar substrate and patterning the metal planar substrate. The metal planar substrate includes a first surface and a second surface opposite to the first surface. The patterning the metal planar substrate includes forming strip-shaped structures, forming through holes, and forming a blind hole in a direction from the first surface to the second surface. The through holes extend to the first surface and the second surface. The through holes and the strip-shaped structures are alternately arranged. The blind hole extends across the through holes.

Abstract: A method of fabricating a metal mask includes receiving a conductive substrate with a first surface, a second surface opposite to the first surface, a third surface connecting the first and second surfaces, and a fourth surface opposite to the third surface and connecting the first and second surfaces. The method further includes forming trenches in a direction from the first surface to the second surface and protrusions in the conductive substrate. The trenches and the protrusions are alternately arranged. The method further includes filling the trenches with an insulation material covering a first area of the protrusions, forming a metal layer on the conductive substrate overlying a second area different from the first area of the protrusions, removing the insulation material, and removing the conductive substrate. The metal layer becomes a metal mask with a three-dimensional structure including strip-shaped structures.

Abstract: A metal mask and an inspecting method thereof are provided. In the method, a metal mask having a first and a second long side, a first and a second short side, and plural pattern regions is provided. Afterwards, based on the pattern regions adjacent to the first and second long sides, a first reference straight line adjacent to the first long side and a second reference straight line adjacent to the second long side are defined. Then, a first maximum offset length between the pattern regions adjacent to first long side and first reference straight line is measured. A second maximum offset length between the pattern regions adjacent to second long side and second reference straight line is measured. When a difference between the first and second maximum offset lengths is less than or equal to 20 ?m, the metal mask is determined to meet an inspecting standard.

Abstract: An AMOLED display device includes a substrate, a device layer, a flat layer, a first, a second, and a third color filter layers, a first, a second, and a third pixel electrodes, a first, a second and a third organic light emitting layers. The device layer on the substrate includes active devices. The flat layer on the device layer includes contact window openings. The first color filter layer on the flat layer has a first pixel area and a first opening configured above a part of the contact window openings. The second color filter layer on the flat layer has a second pixel area and a second opening configured above a part of the contact window openings. The third color filter layer on the flat layer has a third pixel area and a third opening configured above a part of the contact window openings.

Abstract: An AMOLED display device includes a substrate, a device layer, a flat layer, a first, a second, and a third color filter layers, a first, a second, and a third pixel electrodes, a first, a second and a third organic light emitting layers. The device layer on the substrate includes active devices. The flat layer on the device layer includes contact window openings. The first color filter layer on the flat layer has a first pixel area and a first opening configured above a part of the contact window openings. The second color filter layer on the flat layer has a second pixel area and a second opening configured above a part of the contact window openings. The third color filter layer on the flat layer has a third pixel area and a third opening configured above a part of the contact window openings.

Abstract: A method for fabricating an AMOLED display device is provided. A substrate is provided. A device layer having multiple active devices is formed on the substrate. A flat layer is configured on the device layer. A first, a second and a third color photoresistant layers are respectively configured on the flat layer and are patterned to form a first, a second and a third color filter layers. The first, the second and the third color filter layers respectively define a first, a second and a third pixel areas and are used for etching masks to etch the flat layer for exposing parts of the active devices. A first, a second and a third pixel electrode are respectively configured in the mentioned pixel areas and are electrically connected with the active devices. A first, a second and a third organic light emitting layers are respectively configured on the mentioned pixel electrodes.

Abstract: A method for fabricating an AMOLED display device is provided. A substrate is provided. A device layer having multiple active devices is formed on the substrate. A flat layer is configured on the device layer. A first, a second and a third color photoresistant layers are respectively configured on the flat layer and are patterned to form a first, a second and a third color filter layers. The first, the second and the third color filter layers respectively define a first, a second and a third pixel areas and are used for etching masks to etch the flat layer for exposing parts of the active devices. A first, a second and a third pixel electrode are respectively configured in the mentioned pixel areas and are electrically connected with the active devices. A first, a second and a third organic light emitting layers are respectively configured on the mentioned pixel electrodes.

Abstract: A method of fabricating a polysilicon layer is provided. A substrate having a front surface and a back surface is provided. A buffer layer, an amorphous layer and a cap layer are sequentially formed on the front surface of the substrate. The cap layer is patterned to form a patterned cap layer exposing a portion of the amorphous layer, wherein the exposed portion of the amorphous layer is a crystallization initial region. A metallic catalytic layer is formed on the patterned cap layer, wherein the metallic catalytic layer contacts with the crystallization initial region of the amorphous layer. A laser annealing process is performed through the back surface of the substrate so that the amorphous layer is crystallized and transformed into a polysilicon layer from the crystallization initial region.

Abstract: A method of forming a thin film transistor is provided. First, an amorphous silicon layer is formed on a substrate. Next, a first gate insulating layer is formed on the amorphous silicon layer. Then, an annealing process is performed so that the amorphous silicon layer is melted and re-crystallized to form a poly silicon layer. Next, the first insulating layer and the poly silicon layer are patterned to form an island. Then, a gate electrode is formed on the island. Finally, a source region and a drain region are formed inside the poly silicon layer of the island. After the annealing process is performed, the boundary between the poly silicon layer and the gate insulating layer becomes denser, so that the current leakage of the thin film transistor can be reduced.