Abstract: A semiconductor device includes first to sixth active patterns extending in a first direction and spaced apart in the first direction and a second direction; a field insulating layer between the first and second active patterns, an upper surface thereof being lower than upper surfaces of the first and second active patterns; a first gate structure on the field insulating layer and the first active pattern and extending in the second direction; a second gate structure on the field insulating layer and the second active pattern and extending in the second direction; a first separation trench extending between the second and third active patterns and the fifth and sixth active patterns, and a second separation trench extending between the first and second gate structures, wherein a lowest surface of the first separation trench is higher than a lowest surface of the second separation trench.

Abstract: A method for operating an electronic device, the method including: displacing a rollable touchscreen to a first position along a first direction, a first side of the rollable touchscreen being mounted in a housing, the rollable touchscreen being configured to be rolled into or unrolled out of the housing along the first direction, detecting an active electrode at a first location on the rollable touchscreen, the active electrode being mounted in the housing, and determining the first position of the rollable touchscreen based on the first location, the first positing being indicative of a fractional amount of the rollable touchscreen outside the housing.

Abstract: The inventive concept provides a substrate treating apparatus. The substrate treating apparatus comprises a chamber having a treating space therein; a support unit placed within the treating space and supporting a substrate; and a plasma generating unit for generating a plasma from a process gas supplied to the treating space, and wherein the plasma generating unit comprising: a first electrode; and a second electrode facing the first electrode, the second electrode made of a material capable of transmitting electromagnetic waves.

Abstract: Disclosed herein is a strain gauge including a substrate, with a first Wheatstone bridge arrangement of resistors disposed on a first surface of the substrate, and a second Wheatstone bridge arrangement of resistors disposed remotely from the first Wheatstone bridge arrangement of resistors. The resistors of the first Wheatstone bridge arrangement are equal in resistance to one another, while the resistors of the second Wheatstone bridge arrangement are unequal in resistance to one another and unequal to those of the first Wheatstone bridge arrangement. The first Wheatstone bridge arrangement of resistors are electrically connected in parallel with the second Wheatstone bridge arrangement of resistors such that each resistor of the first Wheatstone bridge arrangement is electrically connected in parallel with a different resistor of the second Wheatstone bridge arrangement.

Abstract: The present invention relates to a pharmaceutical composition for preventing or treating myositis. More particularly, the present invention relates to a pharmaceutical composition for preventing or treating myositis, comprising mitochondria as an active ingredient. When the pharmaceutical composition of the present invention comprising exogenous mitochondria as an active ingredient is administered to a subject suffering from myositis, inflammatory cells infiltrated into the muscle cells of the subject can be reduced. In addition, the pharmaceutical composition of the present invention effectively inhibits the expression of IL-1?, TNF-?, and IL-6, inflammatory cytokines. Therefore, the pharmaceutical composition according to the present invention can be usefully used for preventing or treating myositis.

Abstract: A camera module includes a liquid lens unit; a lens holder in which the liquid lens unit is disposed; a main board configured to supply a driving signal to drive the liquid lens unit; and a base disposed on the main board, the base having an inner space in which the liquid lens unit is disposed, wherein the liquid lens unit includes: a liquid lens including upper electrodes and a lower electrode; and a lower connection substrate connected to the lower electrode, and wherein the base includes: an upper connection part configured to electrically connect the upper electrodes to the main board, the upper connection part being disposed adjacent to the upper electrodes in a plan view; and a lower connection part configured to electrically connect the lower connection substrate to the main board.

Abstract: A carrageenan derivative according to the present disclosure can quickly and easily detect and label the presence of inflammation-related macrophages and, particularly, can accurately and easily identify M1-type macrophages highly associated with early inflammation. In addition, the carrageenan derivative has advantages in that it can be produced easily, environmental pollution is minimized because a small amount of organic solvent is used, and initial cost is low.

Abstract: Provided is a T1 contrast agent for magnetic resonance imaging. The T1 contrast agent includes fine iron oxide nanoparticle cores and micelles encapsulating the core particles. The micelles include a nonionic surfactant consisting of a hydrophilic moiety containing at least two chains and a hydrophobic moiety containing at least one C10-C30 hydrocarbon chain. The T1 contrast agent of the present invention is a novel one based on fine iron oxide nanoparticles that can replace conventional gadolinium-based T1 contrast agents. The T1 contrast agent based on fine iron oxide nanoparticles according to the present invention is harmless to humans, is rapidly distributed in the blood, and has a uniform size, ensuring its uniform contrast effect. In addition, the T1 contrast agent of the present invention enables image observation for at least 1 hour to up to 2 hours and is excreted through the kidneys and liver.

Abstract: A semiconductor device includes a substrate including NMOS and PMOS regions; first and second active patterns on the NMOS region; third and fourth active patterns on the PMOS region, the third active pattern being spaced apart from the first active pattern; a first dummy gate structure on the first and third active patterns; a second dummy gate structure on the second and fourth active patterns; a normal gate structure on the third active pattern; a first source/drain pattern on the third active pattern and between the normal gate structure and the first dummy gate structure; and a first element separation structure between the first and second dummy gate structures and separating the third and fourth active patterns, wherein the first dummy gate structure includes a first dummy insulation gate intersecting the third active pattern.

Abstract: A heat conversion apparatus according to one embodiment of the present invention comprises: a pipe which includes a first flat surface and a second flat surface disposed parallel to the first surface, and through which air having a lower temperature than entered air is discharged; a plurality of thermoelectric elements that have heat-absorbing surfaces disposed in external sides of the respective first and second surfaces; a plurality of printed circuit boards (PCBs) that are electrically connected to the plurality of thermoelectric elements; and coolant passing members that are disposed on heat-radiating surfaces of the plurality of thermoelectric elements, wherein an external floor surface of the coolant passing member includes a plurality of first external floor surfaces having a first height and a plurality of second external floor surfaces having a second height that is different from the first height, the plurality of first external floor surfaces are in contact with the heat-radiating surfaces of the p

Abstract: The present embodiment relates to a sensor driving apparatus comprising: a first substrate including a first opening; a support member arranged at a position corresponding to the first opening; a first connector for electrically connecting the support member and the first substrate and elastically supporting the support member; a base coupled to the support member; a second substrate arranged on the base; an image sensor mounted on the second substrate; a second connector which is arranged on the base and electrically connects the second substrate and the first connector; a first driving unit arranged on the first substrate; and a second driving unit arranged on the base and facing the first driving unit.

Abstract: A method for operating an electronic device includes: having a touch sensitive display configured to be rolled into or unrolled out of a first retainment structure along a first direction. The first retainment structure includes a conductive material disposed within the first retainment structure.

Abstract: Methods of processing a capacitor device with high energy density and high extraction efficiency based on sol-gel films. The films can be formed by use of a single precursor, including siloxane precursors bearing a polar group on a flexible tethering group. The sol-gel compositions used in the formation of films can have high dielectric permittivity, low dielectric loss, high breakdown strength and high-energy storage properties. The methods can be well suited for both high energy density and high power density to provide enhanced energy storage capabilities for discrete, embedded or on-chip integrated capacitor applications, gate dielectrics for transistors and displays, capacitive touch screens, light weight mobile defibrillators, filters for cellular devices, electric propulsion, electric vehicles, power invertors for microgrid storage, load leveling of transients on a wide range of timescales for medium voltage electric grids.

Abstract: A semiconductor device includes a substrate including NMOS and PMOS regions; first and second active patterns on the NMOS region; third and fourth active patterns on the PMOS region, the third active pattern being spaced apart from the first active pattern; a first dummy gate structure on the first and third active patterns; a second dummy gate structure on the second and fourth active patterns; a normal gate structure on the third active pattern; a first source/drain pattern on the third active pattern and between the normal gate structure and the first dummy gate structure; and a first element separation structure between the first and second dummy gate structures and separating the third and fourth active patterns, wherein the first dummy gate structure includes a first dummy insulation gate intersecting the third active pattern.

Abstract: The present disclosure provides a method for converting the target gas contained in the exhaust gas in plasma phase and an apparatus for implementing the method, the method comprising the steps of: generating a plasma in a conversion region in which the conversion of the target gas occurs; supplying, to the conversion region, a conversion promoting agent containing a conversion promoting element of which the first ionization energy is not greater than 10 eV for promoting the conversion of the target gas; supplying, to the conversion region, a conversion agent that produces conversion products by combining with the dissociation products of the target gas and prevents the dissociation products from recombining into the target gas; and supplying the exhaust gas containing the target gas to the conversion region.

Abstract: A heat conversion apparatus according to one embodiment of the present invention comprises: a pipe which includes a first flat surface and a second flat surface disposed parallel to the first surface, and through which air having a lower temperature than entered air is discharged; a plurality of thermoelectric elements that have heat-absorbing surfaces disposed in external sides of the respective first and second surfaces; a plurality of printed circuit boards (PCBs) that are electrically connected to the plurality of thermoelectric elements; and coolant passing members that are disposed on heat-radiating surfaces of the plurality of thermoelectric elements, wherein an external floor surface of the coolant passing member includes a plurality of first external floor surfaces having a first height and a plurality of second external floor surfaces having a second height that is different from the first height, the plurality of first external floor surfaces are in contact with the heat-radiating surfaces of the p

Abstract: Disclosed herein is a strain gauge including a substrate, with a first Wheatstone bridge arrangement of resistors disposed on a first surface of the substrate, and a second Wheatstone bridge arrangement of resistors disposed remotely from the first Wheatstone bridge arrangement of resistors. The resistors of the first Wheatstone bridge arrangement are equal in resistance to one another, while the resistors of the second Wheatstone bridge arrangement are unequal in resistance to one another and unequal to those of the first Wheatstone bridge arrangement. The first Wheatstone bridge arrangement of resistors are electrically connected in parallel with the second Wheatstone bridge arrangement of resistors such that each resistor of the first Wheatstone bridge arrangement is electrically connected in parallel with a different resistor of the second Wheatstone bridge arrangement.

Abstract: A semiconductor device includes first to sixth active patterns extending in a first direction and spaced apart in the first direction and a second direction; a field insulating layer between the first and second active patterns, an upper surface thereof being lower than upper surfaces of the first and second active patterns; a first gate structure on the field insulating layer and the first active pattern and extending in the second direction; a second gate structure on the field insulating layer and the second active pattern and extending in the second direction; a first separation trench extending between the second and third active patterns and the fifth and sixth active patterns, and a second separation trench extending between the first and second gate structures, wherein a lowest surface of the first separation trench is higher than a lowest surface of the second separation trench.

Abstract: A semiconductor device includes a substrate including NMOS and PMOS regions; first and second active patterns on the NMOS region; third and fourth active patterns on the PMOS region, the third active pattern being spaced apart from the first active pattern; a first dummy gate structure on the first and third active patterns; a second dummy gate structure on the second and fourth active patterns; a normal gate structure on the third active pattern; a first source/drain pattern on the third active pattern and between the normal gate structure and the first dummy gate structure; and a first element separation structure between the first and second dummy gate structures and separating the third and fourth active patterns, wherein the first dummy gate structure includes a first dummy insulation gate intersecting the third active pattern.

Abstract: A sensor driving device is provided. A sensor driving device according to one aspect of the present invention comprises: a first substrate; a second substrate disposed on the first substrate and electrically connected to the first substrate; and an image sensor disposed on the second substrate, wherein the second substrate comprises a body and a first protrusion part protruding from one end of the body, and the first protrusion part comprises a first extension part extending in a first direction from the body, and a second extension part extending in a second direction that differs from the first direction from the first extension part.