Patents by Inventor Yun Seong Eo
Yun Seong Eo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10680465Abstract: A wireless power transmitter may comprise: a signal generation unit which generates a differential signal; an amplifier which amplifies the differential signal with a predetermined gain; a resonance unit which generates an electromagnetic wave using the amplified differential signal and radiates the same; and a signal adjustment unit which senses at least one of the current and the voltage of the amplified differential signal at the input terminal of the resonance unit, and adjusts at least one of the phase and the amplitude of the differential signal output from the signal generation unit, on the basis of the result of the sensing.Type: GrantFiled: September 12, 2016Date of Patent: June 9, 2020Assignees: Samsung Electronics Co., Ltd., KWANGWOON UNIVERSITY INDUSTRY-ACADEMIC COLLABORATION FOUNDATIONInventors: Sung-Ku Yeo, Hyun-Jun Ahn, Yun-Seong Eo, Sung-Bum Park
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Publication number: 20180269725Abstract: A wireless power transmitter may comprise: a signal generation unit which generates a differential signal; an amplifier which amplifies the differential signal with a predetermined gain; a resonance unit which generates an electromagnetic wave using the amplified differential signal and radiates the same; and a signal adjustment unit which senses at least one of the current and the voltage of the amplified differential signal at the input terminal of the resonance unit, and adjusts at least one of the phase and the amplitude of the differential signal output from the signal generation unit, on the basis of the result of the sensing.Type: ApplicationFiled: September 12, 2016Publication date: September 20, 2018Inventors: Sung-Ku YEO, Hyun-Jun AHN, Yun-Seong EO, Sung-Bum PARK
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Patent number: 9973024Abstract: A wireless power transmitter and a method for detecting a change in load during wireless charging in the wireless power transmitter is provided. The wireless power transmitter includes a power transmission unit configured to transmit power to a wireless power receiver, a current detection unit configured to measure a voltage value corresponding to a current that is output to the power transmission unit while the power is transmitted from the power transmission unit, and a controller configured to adjust the power transmitted by the power transmission unit based on the measured voltage value.Type: GrantFiled: March 13, 2015Date of Patent: May 15, 2018Assignees: Samsung Electronics Co., Ltd, Kwangwoon University Industry-Academic Collaboration FoundationInventors: Sung-Ku Yeo, Yun-Seong Eo, Kyu-Sub Kwak, Sung-Bum Park, Hyun-Jun Ahn
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Publication number: 20160118845Abstract: A wireless power transmitter and a method for detecting a change in load during wireless charging in the wireless power transmitter is provided. The wireless power transmitter includes a power transmission unit configured to transmit power to a wireless power receiver, a current detection unit configured to measure a voltage value corresponding to a current that is output to the power transmission unit while the power is transmitted from the power transmission unit, and a controller configured to adjust the power transmitted by the power transmission unit based on the measured voltage value.Type: ApplicationFiled: March 13, 2015Publication date: April 28, 2016Inventors: Sung-Ku YEO, Yun-Seong Eo, Kyu-Sub Kwak, Sung-Bum Park, Hyun-Jun Ahn
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Patent number: 8120464Abstract: A radio frequency identification (RFID) reader is provided, having a transmitting circuit that generates a transmitted signal to operate an RFID tag, a receiving circuit that receives a received signal including a tag signal from the RFID tag and a transmission carrier leakage signal leaking from the transmitting circuit, and a leakage removing circuit that senses a phase and amplitude of the transmission carrier leakage signal inputted to the receiving circuit, converts the transmitted signal from the transmitting circuit into a signal having a phase opposite to that of the transmission carrier leakage signal and an amplitude equal to that of the transmission carrier leakage signal, and synthesizes the converted signal and the received signal inputted to the receiving circuit.Type: GrantFiled: December 6, 2006Date of Patent: February 21, 2012Assignee: Samsung Electronics Co., Ltd.Inventors: Hee-mun Bang, Yun-seong Eo, Ick-jin Kwon, Heung-bae Lee
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Patent number: 8102218Abstract: An inductor circuit includes a pair of inductors connected in parallel with each other and a switch for turning on and off electric power to one of the pair of inductors. The inductance of the inductor circuit can be varied and the quality factor Q can be improved. Further, RF circuits employing the inductor circuit can generate an intended operating frequency.Type: GrantFiled: November 21, 2008Date of Patent: January 24, 2012Assignee: Samsung Electronics Co., Ltd.Inventors: Yun-seong Eo, Hee-mun Bang, Kwang-du Lee, Heung-bae Lee
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Patent number: 7893786Abstract: An inductor circuit includes a pair of inductors connected in parallel with each other and a switch for turning on and off electric power to one of the pair of inductors. The inductance of the inductor circuit can be varied and the quality factor Q can be improved. Further, RF circuits employing the inductor circuit can generate an intended operating frequency.Type: GrantFiled: February 15, 2006Date of Patent: February 22, 2011Assignee: Samsung Electronics Co., Ltd.Inventors: Yun-seong Eo, Hee-mun Bang, Kwang-du Lee, Heung-bae Lee
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Patent number: 7835716Abstract: An RF receiver and an RF receiving method are provided using a baseband signal in which a DC offset is removed. In the RF receiver, a noise phase removing unit generates a phase controlled local signal PLOQ in which a phase of a Q signal of a local signal LOQ is controlled, by synthesizing a received RF signal RXIN and the Q signal of the local signal LOQ. A down converter generates a signal in which a DC offset from noise introduced into the received RF signal RXIN is removed, when synthesizing the received RF signal RXIN and the phase controlled local signal PLOQ for frequency-down conversion.Type: GrantFiled: June 12, 2006Date of Patent: November 16, 2010Assignee: Samsung Electronics Co., Ltd.Inventors: Ick Jin Kwon, Heung Bae Lee, Yun Seong Eo, Hee Mun Bang
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Patent number: 7711347Abstract: Provided is a mixer including: an amplifier amplifying an input signal using at least one amplifier element; a mixing unit mixing the input signal amplified by the amplifier with a local oscillator signal output from a local oscillator. The mixing unit includes at least one pair of switching elements switching the amplifier, and the switching elements are MOSFETs having gates and body nodes to which a same local oscillator signal is applied. Thus, a time required for turning on the switching elements can be reduced, and 1/f noise is also reduced. Also, an overdrive voltage can be increased with respect to local oscillator signals having an identical intensity. Thus, a relatively low voltage operation can be performed.Type: GrantFiled: May 1, 2006Date of Patent: May 4, 2010Assignee: Samsung Electronics Co., Ltd.Inventors: Ick-jin Kwon, Yun-seong Eo, Heung-bae Lee
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Patent number: 7702047Abstract: An RF receiving apparatus and method which can remove a leakage component in a received signal are provided. In the RF receiving apparatus, a noise removing unit estimates a signal corresponding to a noise component introduced into a received RF signal RXIN by controlling a gain and a phase of a local signal LOI and removes the estimated noise signal from the received RF signal RXIN. An RF signal in which the noise is removed is frequency-down converted in a receiving unit. Also, the noise removing unit utilizes a Q signal of the local signal LOI, LOQ, to control the phase of the local signal LOI.Type: GrantFiled: May 18, 2006Date of Patent: April 20, 2010Assignee: Samsung Electronics Co., Ltd.Inventors: Ick Jin Kwon, Heung Bae Lee, Yun Seong Eo
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Patent number: 7525407Abstract: An integrated circuit having integrated inductors includes at least one pair of transistors, and at least one inductor group which includes a pair of inductors coupled to the at least one pair of the transistor, respectively. The pair of the inductors form a spiral shape on a plane and the inductors arranged symmetrically to each other. Magnetic fluxes, which are generated by current flows along the inductors of the at least one inductor group, are formed in a direction to mutually intensify the magnetic fluxes according to differential signals applied to the at least one transistors from outside. Accordingly, high inductance and high quality factor can be attained owing to the positive magnetic coupling of the inductors.Type: GrantFiled: February 15, 2006Date of Patent: April 28, 2009Assignee: Samsung Electronics Co., Ltd.Inventors: Kwang-du Lee, Yun-seong Eo, Hee-mun Bang, Seong-soo Lee, Sung-jae Jung, Heung-bae Lee
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Publication number: 20090102572Abstract: An inductor circuit includes a pair of inductors connected in parallel with each other and a switch for turning on and off electric power to one of the pair of inductors. The inductance of the inductor circuit can be varied and the quality factor Q can be improved. Further, RF circuits employing the inductor circuit can generate an intended operating frequency.Type: ApplicationFiled: November 21, 2008Publication date: April 23, 2009Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Yun-seong EO, Hee-mun Bang, Kwang-du Lee, Heung-bae Lee
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Publication number: 20090096557Abstract: Disclosed is a variable inductance applying device using a variable capacitor, and a variable frequency generating device thereof. The variable inductance applying device includes: a first inductor whose both terminals are connected to an inductance applying terminal applying inductance to an external circuit; a second inductor inductively coupled to the first inductor; and a variable capacitor connected to both terminals of the second inductor, which varies inductance from the inductance applying terminal by changing capacitance. Therefore, the inductance to be applied to the external circuit can be varied by changing the capacitance of the variable capacitor. Since the variable capacitor rarely contains a resistance component, energy loss due to the resistance component hardly occurs. As a result, the variable inductance applying device has a high value of Q.Type: ApplicationFiled: December 12, 2008Publication date: April 16, 2009Inventors: Yun-seong Eo, Kwang-du Lee, Heung-bae Lee
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Patent number: 7358810Abstract: A buffer amplifier, which includes a first differential signal amplifier including first and second NMOSFETs (N-type metal-oxide semiconductor field-effect transistors) amplifying differential input signals; a second differential signal amplifier including first and second PMOSFETs (P-type metal-oxide semiconductor field-effect transistors) amplifying the differential input signals; a first feedback resistor including an end commonly connected to drains of the first NMOSFET and the first PMOSFET and the other end commonly connected to gates of the first NMOSFET and the first PMOSFET; a second feedback resistor including an end commonly connected to drains of the second NMOSFET and the second PMOSFET and the other end commonly connected to gates of the second NMOSFET and the second PMOSFET; and a current source providing a bias current for driving the first and second differential signal amplifiers, is provided.Type: GrantFiled: May 23, 2006Date of Patent: April 15, 2008Assignee: Samsung Electronics Co., Ltd.Inventors: Ick-jin Kwon, Seong-sik Song, Yun-seong Eo, Heung-bae Lee
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Patent number: 7274317Abstract: A transmitter having a vertical BJT, capable of reducing power consumption, carrier leakage of a local oscillator and an error vector magnitude (EVM), is disclosed. In the transmitter, vertical BJTs implemented by a standard triplex well CMOS process are used in a frequency up-mixer and a baseband analog circuit including a DAC, an LPF, a VGA and a PGA, thereby improving the overall performance of the transmitter.Type: GrantFiled: May 12, 2006Date of Patent: September 25, 2007Assignee: Samsung Electronics Co., Ltd.Inventors: Yun-seong Eo, Il-ku Nam, Sung-jae Jung, Kwy-ro Lee, Heung-bae Lee, Kyu-don Choi, Joon-hee Lee
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Publication number: 20070194886Abstract: A radio frequency identification (RFID) reader is provided, having a transmitting circuit that generates a transmitted signal to operate an RFID tag, a receiving circuit that receives a received signal including a tag signal from the RFID tag and a transmission carrier leakage signal leaking from the transmitting circuit, and a leakage removing circuit that senses a phase and amplitude of the transmission carrier leakage signal inputted to the receiving circuit, converts the transmitted signal from the transmitting circuit into a signal having a phase opposite to that of the transmission carrier leakage signal and an amplitude equal to that of the transmission carrier leakage signal, and synthesizes the converted signal and the received signal inputted to the receiving circuit.Type: ApplicationFiled: December 6, 2006Publication date: August 23, 2007Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Hee-mun Bang, Yun-seong Eo, Ick-jin Kwon, Heung-bae Lee
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Patent number: 7199669Abstract: A dual gate cascade amplifier includes a first transistor and a second transistor electrically connected in series, the second transistor including a first parallel transistor and a second parallel transistor, the first parallel transistor and the second parallel transistor being electrically connected in parallel, a first channel electrically connecting a first end channel region of the first transistor and a second end channel region, wherein one of the first or second end channel regions is a source and the other of the first or second end channel regions is a drain, the second end channel region being a common end channel region shared by the first and second parallel transistors, and a second channel electrically connected to the second end channel region and extending away from the first transistor.Type: GrantFiled: October 4, 2004Date of Patent: April 3, 2007Assignee: Samsung Electronics Co., Ltd.Inventors: Sung-jae Jung, Hoon-tae Kim, Yun-seong Eo, Kwang-du Lee, Sang-yoon Jeon
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Publication number: 20070004369Abstract: Provided is a mixer including: an amplifier amplifying an input signal using at least one amplifier element; a mixing unit mixing the input signal amplified by the amplifier with a local oscillator signal output from a local oscillator. The mixing unit includes at least one pair of switching elements switching the amplifier, and the switching elements are MOSFETs having gates and body nodes to which a same local oscillator signal is applied. Thus, a time required for turning on the switching elements can be reduced, and 1/f noise is also reduced. Also, an overdrive voltage can be increased with respect to local oscillator signals having an identical intensity. Thus, a relatively low voltage operation can be performed.Type: ApplicationFiled: May 1, 2006Publication date: January 4, 2007Inventors: Ick-jin Kwon, Yun-seong Eo, Heung-bae Lee
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Publication number: 20070001760Abstract: A buffer amplifier, which includes a first differential signal amplifier including first and second NMOSFETs (N-type metal-oxide semiconductor field-effect transistors) amplifying differential input signals; a second differential signal amplifier including first and second PMOSFETs (P-type metal-oxide semiconductor field-effect transistors) amplifying the differential input signals; a first feedback resistor including an end commonly connected to drains of the first NMOSFET and the first PMOSFET and the other end commonly connected to gates of the first NMOSFET and the first PMOSFET; a second feedback resistor including an end commonly connected to drains of the second NMOSFET and the second PMOSFET and the other end commonly connected to gates of the second NMOSFET and the second PMOSFET; and a current source providing a bias current for driving the first and second differential signal amplifiers, is provided.Type: ApplicationFiled: May 23, 2006Publication date: January 4, 2007Inventors: Ick-jin Kwon, Seong-sik Song, Yun-seong Eo, Heung-bae Lee
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Publication number: 20060279444Abstract: A transmitter having a vertical BJT, capable of reducing power consumption, carrier leakage of a local oscillator and an error vector magnitude (EVM), is disclosed. In the transmitter, vertical BJTs implemented by a standard triplex well CMOS process are used in a frequency up-mixer and a baseband analog circuit including a DAC, an LPF, a VGA and a PGA, thereby improving the overall performance of the transmitter.Type: ApplicationFiled: May 12, 2006Publication date: December 14, 2006Inventors: Yun-seong Eo, Il-ku Nam, Sung-jae Jung, Kwy-ro Lee, Heung-bae Lee, Kyu-don Choi, Joon-hee Lee