Patents by Inventor Yun-seong Sin

Yun-seong Sin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5208175
    Abstract: A nonvolatile semiconductor memory device and the method thereof is disclosed. The nonvolatile semiconductor memory device comprises a first conductive type semiconductor substrate, a field oxide film formed on the semiconductor substrate to define an active region, a source region and a drain region which are separated by a channel region near the surface of semiconductor substrate of the active region and diffused with an impurity of the opposite conductive type to the semiconductor substrate, a thin gate insulating film formed on the channel region and partially on the source and drain regions, a first conductive layer formed on the gate insulating film and provided as a floating electrode for accumulating charges, an interlayer insulating film formed on the first conductive layer, and a second conductive layer formed on the interlayer insulating film and provided as a control electrode.
    Type: Grant
    Filed: April 26, 1991
    Date of Patent: May 4, 1993
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jeong-hyeok Choi, Geon-su Kim, Yun-seong Sin