Patents by Inventor Yun Seop Oh

Yun Seop Oh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20180120707
    Abstract: Disclosed are a composition for coating a photoresist pattern and a method for forming a fine pattern using the same. The composition for coating a photoresist pattern includes a polymer compound containing a hydroxyl group and an ammonium base, and a solvent. The method for forming a fine pattern includes coating the composition on a previously formed photoresist pattern to thereby effectively reduce the size of a photoresist contact hole or space, and can be used in all semiconductor processes in which a fine pattern is required to be formed.
    Type: Application
    Filed: November 17, 2017
    Publication date: May 3, 2018
    Inventors: Sung Jae LEE, Keun Kyu Kong, Jae Hee Sim, Jeong Hoon An, Yun Seop Oh
  • Publication number: 20170102619
    Abstract: Disclosed are a composition for coating a photoresist pattern and a method for forming a fine pattern using the same. The composition for coating a photoresist pattern includes a polymer compound containing a hydroxyl group and an ammonium base, and a solvent The method for forming a fine pattern includes coating the composition on a previously formed photoresist pattern to thereby effectively reduce the size of a photoresist contact hole or space, and can be used in all semiconductor processes in which a fine pattern is required to be formed.
    Type: Application
    Filed: March 2, 2016
    Publication date: April 13, 2017
    Inventors: Sung Jae LEE, Keun Kyu KONG, Jae Hee SIM, Jeong Hoon AN, Yun Seop OH
  • Publication number: 20170032960
    Abstract: Disclosed are a composition for coating a photoresist pattern and a method for forming a fine pattern using the same. The composition for coating a photoresist pattern includes an ammonium base-containing polymer compound and a solvent. The method for forming a fine pattern includes coating the composition on a previously formed photoresist pattern to thereby effectively reduce the size of a photoresist contact hole or space, and can be used in all semiconductor processes in which a fine pattern is required to be formed.
    Type: Application
    Filed: January 11, 2016
    Publication date: February 2, 2017
    Inventors: Sung Jae Lee, Keun Kyu Kong, Jeong Hoon An, Yun Seop Oh, Chang Yeol Oh