Abstract: An electronic device includes: a substrate; a gate electrode disposed on the substrate; a data line disposed on the substrate and extending along an extension direction; a power supply circuit disposed on the substrate; and a connecting member disposed on the substrate and electrically connected to the gate electrode, wherein the connecting member includes a first part overlapped with the gate electrode and a second part not overlapped with the gate electrode, wherein in a top view, an outline of the connecting member includes a first curve segment, wherein a maximum width of the data line in a direction perpendicular to the extension direction is less than a maximum width of the power supply circuit in the direction.

Abstract: A memory device includes a first active area, a first doped structure of a first doping type, a second active area, a first gate structure and a second doped structure of a second doping type different from the first doping type. The second active area is disposed between the first active area and the first doped structure. The first gate structure is disposed between the first active area and the second active area in a layout view, and configured to store a first bit with the first active area and the second active area. The second doped structure is coupled to the first gate structure and disposed between the first doped structure and the second active area. The second doped structure and the first doped structure are configured to receive a first signal corresponding to the first bit from the first gate structure.

Abstract: The disclosed display device includes: a substrate; a gate electrode disposed on the substrate; a data line disposed on the substrate and extending along an extension direction; and a connecting member disposed on the substrate and electrically connecting to the gate electrode, wherein the connecting member includes a first part overlapped with the gate electrode and a second part not overlapped with the gate electrode, and a minimum width of the second part in a direction perpendicular to the extension direction is less than a maximum width of the first part in the direction.

Abstract: A reconfigurable metamaterial is used to enhance the reception field of a radio frequency (“RF”) coil for use in magnetic resonance imaging (“MRI”). In general, the metamaterial can be a metasurface, which may be flexible, having a periodic array of resonators. Each resonator in the periodic array can be defined as a unit cell of the metamaterial and/or metasurface. The unit cells include a first conductor and a second conductor separated by an insulator layer. The first conductor can be a solid conductor and the second conductor can be a conductive fluid (e.g., a liquid metal, a liquid metal alloy) contained within a microfluidic channel. Varying the volume of conductive fluid in each unit cell adjust the signal enhancement ratio of the metamaterial.

Abstract: An electronic device includes: a substrate, a poly-silicon layer disposed on the substrate, a first metal layer disposed on the substrate, a first insulating layer disposed on the first metal layer, a second insulating layer disposed on the first insulating layer; and a second metal layer covering a part of the second insulating layer and electrically connected to the first metal layer. Wherein a thickness of the second insulating layer under the second metal layer is larger than a thickness of the second insulating layer uncovered with the second metal layer.

Abstract: Disclosed herein are related to a memory cell including one or more programmable resistors and a control transistor. In one aspect, a programmable resistor includes a gate structure and one or more source/drain structures for forming a transistor. A resistance of the programmable resistor may be set by applying a voltage to the gate structure, while the control transistor is enabled. Data stored by the programmable resistor can be read by sensing current through the programmable resistor, while the control transistor is disabled. In one aspect, the one or more programmable resistors and the control transistor are implemented by same type of components, allowing the memory cell to be formed in a compact manner through a simplified the fabrication process.

Abstract: A resistive memory device includes a bottom electrode, a top electrode and a resistance changing element. The top electrode is disposed above and spaced apart from the bottom electrode, and has a downward protrusion aligned with the bottom electrode. The resistance changing element covers side and bottom surfaces of the downward protrusion.

Abstract: A display device includes: a first substrate; a poly-silicon layer disposed on the first substrate; a first metal layer disposed on the poly-silicon layer and including a gate electrode; a first insulating layer disposed on the first metal layer; a second insulating layer disposed on the first insulating layer; a second metal layer covering a part of the second insulating layer; and a light emitting diode unit electrically connected to a first portion of the second metal layer, wherein a thickness of the second insulating layer under the second metal layer is larger than a thickness of the second insulating layer uncovered with the second metal layer.

Abstract: Disclosed herein are related to a memory cell including one or more programmable resistors and a control transistor. In one aspect, a programmable resistor includes a gate structure and one or more source/drain structures for forming a transistor. A resistance of the programmable resistor may be set by applying a voltage to the gate structure, while the control transistor is enabled. Data stored by the programmable resistor can be read by sensing current through the programmable resistor, while the control transistor is disabled. In one aspect, the one or more programmable resistors and the control transistor are implemented by same type of components, allowing the memory cell to be formed in a compact manner through a simplified the fabrication process.

Abstract: Provided herein are compositions and methods for mechanochemical dynamic therapy.

Abstract: A metasurface for wireless power transfer includes an insulated support structure. A plurality of magnetically coupled resonators are insulated and supported by the insulated support structure. The plurality of coupled resonators are configured and arranged to couple within and shape a magnetic near field distribution from a transmitter into a target distribution toward a target receiver. The plurality of coupled resonators form a non-uniform impedance distribution pattern to provide the shape of the target distribution. The insulated support structure can be thin and flexible, allowing it to be worn by a person, for example to transfer power to an implanted device.

Abstract: A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a first transistor, a first resistive random access memory (RRAM) resistor, and a second RRAM resistor. The first resistor includes a first resistive material layer, a first electrode shared by the second resistor, and a second electrode. The second resistor includes the first electrode, a second resistive material layer, and a third electrode. The first electrode is electrically coupled to the first transistor.

Abstract: An electronic device including an electronic unit and a functional unit is provided. The electronic unit includes a substrate, a plurality of semiconductor components, and a cover layer. The substrate has a plurality of first side surfaces. The semiconductor components are disposed on the substrate. The cover layer is disposed on the semiconductor components and has a plurality of second side surfaces. The functional unit is disposed on at least one of at least one of the first side surfaces and at least one of the second side surfaces.

Abstract: The disclosure provides an electronic device which includes a substrate structure, a driving component, and a conductive pattern. The driving component and the conductive pattern are formed on the substrate structure, and the thickness of the conductive pattern is greater than or equal to 0.5 ?m and less than or equal to 15 ?m.

Abstract: An electronic device and a manufacturing method thereof are provided. The electronic device includes a substrate, multiple light emitting elements, and a light absorbing layer. The light emitting elements are disposed on the substrate. One of the light emitting elements has at least one lateral surface. The light absorbing layer is disposed on the substrate and is located between two adjacent light emitting elements, and the light absorbing layer contacts the at least one lateral surface.

Abstract: A stabilizer includes a receiving device, a guide plate element for connection with a chain, and a clutch device. The guide plate element is movably mounted on the receiving device and performing a rotation state through an elastic element. The clutch device is mounted on the receiving device and connected with the guide plate element and used for providing one-way resistance. When a vehicle body jounces, the guide plate element rotates upwardly under force, the chain is tensioned, and the clutch device is in a free rotation state. When the guide plate element moves towards an opposite direction under force, the clutch device provides one-way resistance, so that the guide plate element can maintain a tensioning state of the chain for a longer time, and the effect of stabilizing the chain is achieved.

Abstract: A display device includes: a first substrate; a poly-silicon layer disposed on the first substrate; a first metal layer disposed on the poly-silicon layer and including a gate electrode; a first insulating layer disposed on the first metal layer; a second insulating layer disposed on the first insulating layer; a second metal layer covering a part of the second insulating layer; and a light emitting diode unit electrically connected to a first portion of the second metal layer, wherein a thickness of the second insulating layer under the second metal layer is larger than a thickness of the second insulating layer uncovered with the second metal layer.

Abstract: A display device is provided. The display device includes a substrate, a channel layer, a first metal layer, and a second metal layer. The channel layer is disposed on the substrate and includes a first channel layer and a second channel layer. The first metal layer is disposed on the channel layer and includes a first gate and a second gate. The second metal layer is disposed over the first metal layer and includes a first source, a first drain, and a second source. The first gate, the first source, the first drain, and the first channel layer form a first transistor. The second gate, the second source, the first drain, and the second channel layer form a second transistor. The first transistor and the second transistor are connected in parallel.

Abstract: The present invention provides a stabilizer, which comprises a receiving device; a guide plate element for connection with a chain, the guide plate element being movably mounted on the receiving device and performing a rotation state through an elastic element; and a clutch device mounted on the receiving device and connected with the guide plate element and used for providing one-way resistance when the guide plate element moves relative to the receiving device. When a vehicle body jounces, the guide plate element rotates upwardly under force, the chain is tensioned, and the clutch device is in a free rotation state. When the guide plate element moves towards an opposite direction under an action of force, the clutch device provides one-way resistance, so that the guide plate element can maintain a tensioning state of the chain for a longer time, and the effect of stabilizing the chain is achieved.

Abstract: A display device is disclosed, which comprises: a first substrate; a first metal layer disposed on a surface of the first substrate; a first insulating layer disposed on the first metal layer; a second insulating layer disposed on the first insulating layer; and a second metal layer covering a part of the second insulating layer and comprising a connecting region, wherein the first metal layer and the second metal layer are electrically connected to each other in the connecting region, wherein the second metal layer corresponding to the connecting region comprises a sidewall region and a non-sidewall region, a first thickness of the sidewall region corresponding to the second insulating layer along a direction parallel to the surface of the first substrate is smaller than a second thickness of the non-sidewall region along a direction perpendicular to the surface of the first substrate.