Abstract: A semiconductor device assembly is provided. The assembly includes a package substrate which has a tunneled interconnect structure. The tunneled interconnect structure has a solder-wettable surface, an interior cavity, and at least one microvia extending from the surface to the cavity. The assembly further includes a semiconductor device disposed over the substrate and a solder joint coupling the device and the substrate. The joint comprises the solder between the semiconductor device and the interconnect structure, which includes the solder on the surface, the solder in the microvia, and the solder within the interior cavity.

Abstract: An atomic layer deposition apparatus is provided. The atomic layer deposition apparatus includes a reaction chamber, a first heater, a second heater, a first gas supply system, a second gas supply system and a vacuum system. The vacuum system is connected to the reaction chamber. The reaction chamber includes a preheating chamber and a plating chamber connected to the preheating chamber. The first heater is for heating the preheating chamber. The first gas supply system is connected to the preheating chamber. The second heater is for heating the plating chamber. The second gas supply system is connected to the plating chamber.

Abstract: A substrate transport device includes a chamber, a rotary wheel, a first magnet, a carrier, and a second magnet. The rotary wheel is disposed outside the chamber. The first magnet is disposed on the rotary wheel. The carrier is disposed in the chamber. The second magnet is disposed on the carrier.

Abstract: The invention is directed to a solar cell. The solar cell comprises a silicon layer, a front side electrode and a back side electrode. The silicon layer has a first surface and a second surface. The front side electrode is located on the first surface of the silicon layer. The back side electrode is located on the second surface of the silicon layer. Further, the back side electrode comprises a passivation layer, a first conductive layer and a second conductive layer. The passivation layer is located on the second surface of the silicon layer and has a plurality of holes penetrating through the passivation layer. The first conductive layer is located on the passivation layer and is electrically connected to the silicon layer through the holes. The second conductive layer is located on the first conductive layer.

Abstract: A substrate transport device includes a chamber, a rotary wheel, a first magnet, a carrier, and a second magnet. The rotary wheel is disposed outside the chamber. The first magnet is disposed on the rotary wheel. The carrier is disposed in the chamber. The second magnet is disposed on the carrier.

Abstract: An electropolishing device having: an electrode device, which includes a positive electrode guide, a negative electrode guide, a positive electrode plate, a negative electrode plate and a negative working electrode; a clamping apparatus, which includes at least an insulated screw, an upper insulated piece and a lower insulated piece; and an insulated structure, which includes an upper insulated cover and a lower insulated cover.

Abstract: The present invention is an electropolishing process and device for electropolishing an inner surface of a long tube, especially applied to a long tube of greater than two meters and a diameter range between 0.3 and 5 cm. Wherein, the present invention comprises at least one tube, and one complex electrode. An inner surface of the tube is for electropolishing process, and it is an anode as well. The electrode is a cathode and placed on a center of a partition. An end of electrode connects to a cable, the cable is driven by an axial mechanism to be moved the electrode toward the axial mechanism itself. Inside of the tube is full o electrolyte, which is an electrifying medium to connect both anode and cathode. Further, electrolyte cooperates with the electrode to perform the electropolishing process on the inner surface of tube.

Abstract: The present invention is an electropolishing process means for inner and outer surfaces of a metal, especially applied to a metal that inner and outer surfaces both needing high clean and passivation. The present invention comprises: an electrode device, which includes a positive electrode guide, a negative electrode guide, a positive electrode plate, a negative electrode plate and a negative working electrode; a clamping apparatus, which includes at least an insulated screw, an upper insulated piece and a lower insulated piece; an insulated structure, which includes an upper insulated cover and a lower insulated cover.

Abstract: The present invention is an electropolishing process means for an inner surface of a long tube, especially applied to a long tube of greater than two meters and a diameter range between 0.3 to 5 cm. Wherein, the present invention comprises at least one tube, one complex electrode; an inner surface of the tube is for electropolishing process, and it is an anode as well; the electrode is a cathode and placed on a center of a partition; an end of electrode connects to a cable, the cable is driven by an axial mechanism to be moved toward the axial mechanism itself; inside tube are full of electrolyte, which is an electrifying medium to connect both anode and cathode, further, electrolyte cooperates with electrode to move for electropolishing process the inner surface of tube.

Abstract: An MFC controlling device automation method and related system. The method mainly comprises the steps of automatically controlled algorithmic obtaining of MFC open loop system parameters by an identification technique; automatically controlled algorithmic determining of PI control parameters by a dominant pole-placement method; and automatically controlled calculating of a fuzzy logic rule table. The steps form an automatically controlled single closed loop. By performing said steps, multiple PI control parameter sets are obtainable fast and in an automatic way, and a calculation is done to form a refined fuzzy rule data table, so that a greatly enhanced MFC reaction function is attained.

Abstract: An MFC controlling device automation method and related system. The method mainly comprises the steps of automatically controlled algorithmic obtaining of MFC open loop system parameters by an identification technique; automatically controlled algorithmic determining of PI control parameters by a dominant pole-placement method; and automatically controlled calculating of a fuzzy logic rule table. The steps form an automatically controlled single closed loop. By performing said steps, multiple PI control parameter sets are obtainable fast and in an automatic way, and a calculation is done to form a refined fuzzy rule data table, so that a greatly enhanced MFC reaction function is attained.