Abstract: A conductor includes a plurality of metal nanostructures having a circular cross-sectional shape, where each of the metal nanostructure is surrounded by an organic material having a thickness of less than or equal to about 0.5 nm. A method of manufacturing a conductor includes preparing a metal nanostructure having a polygonal cross-sectional shape, and providing a metal nanostructure having a circular cross-sectional shape by supplying light to the metal nanostructure having a polygonal cross-sectional shape.

Abstract: An electrical conductor including a substrate, a first conductive layer including graphene, and a second conductive layer including a conductive metal nanowire, wherein the first conductive layer and the second conductive layer are disposed on the substrate, wherein the first conductive layer is disposed between the substrate and the second conductive layer or on the second conductive layer, wherein the first conductive layer has a first surface facing the second conductive layer and a second surface which is opposite to the first surface, and wherein, in the first surface and the second surface, the graphene is p-doped with a p-type dopant.

Abstract: A transparent electrode including: a substrate; a first layer disposed on the substrate, the first layer including a graphene mesh structure, the graphene mesh structure including graphene and a plurality of holes; and a second layer disposed on the first layer, wherein the second layer includes a plurality of conductive nanowires.

Abstract: A transparent electrode including: a first layer including a thermosetting copolymer including a first repeating unit having an aromatic moiety as a pendant group or incorporated in a backbone of the copolymer and a second repeating unit capable of lowering a curing temperature, a combination of a first polymer including the first repeating unit and a second polymer including the second repeating unit, or a combination thereof; a second layer disposed directly on one side of the first layer, wherein the second layer includes graphene; and a third layer disposed on the second layer, wherein the third layer includes an electrically conductive metal nanowire.

Abstract: A conductive film including: a substrate; an electrically conductive layer disposed on the substrate, wherein the electrically conductive layer includes a plurality of nano-sized conductors; and a protective layer disposed directly on the electrically conductive layer, wherein the protective layer includes a crosslinked polymer having a perfluorinated backbone.

Abstract: A conductor includes a plurality of metal nanostructures having a circular cross-sectional shape, where each of the metal nanostructure is surrounded by an organic material having a thickness of less than or equal to about 0.5 nm. A method of manufacturing a conductor includes preparing a metal nanostructure having a polygonal cross-sectional shape, and providing a metal nanostructure having a circular cross-sectional shape by supplying light to the metal nanostructure having a polygonal cross-sectional shape.

Abstract: A transparent electrode includes: a substrate; an electrically conductive layer disposed on the substrate and including a plurality of nano-sized conductors; and an organic/inorganic composite layer directly disposed on the electrically conductive layer and including a cross-linked polymer and nano-sized inorganic oxide particles, wherein the nano-sized inorganic oxide particles are included in an amount of greater than or equal to about 1 part by weight and less than about 35 parts by weight, relative to 100 parts by weight of the cross-linked polymer. Also an electronic device including the same.

Abstract: A transparent electrode includes: a substrate; an electrically conductive layer disposed on the substrate and including a plurality of nano-sized conductors; and an organic/inorganic composite layer directly disposed on the electrically conductive layer and including a cross-linked polymer and nano-sized inorganic oxide particles, wherein the nano-sized inorganic oxide particles are included in an amount of greater than or equal to about 1 part by weight and less than about 35 parts by weight, relative to 100 parts by weight of the cross-linked polymer. Also an electronic device including the same.

Abstract: A method and an apparatus for manufacturing a nanowire are provided. The method for manufacturing a nanowire includes i) providing a source gas into a chamber, ii) controlling the temperature of a substrate received in the chamber separately from the temperature of the source gas, iii) forming a temperature gradient on the substrate, and iv) forming a nanowire having at least one growth condition selected from a group of growth speed and growth direction controlled according to the temperature gradient on the substrate.

Abstract: A transparent electrode including: a substrate; an undercoat disposed on the substrate; a conductive film disposed on the undercoat and including a plurality of conductive metal nanowires and a carboxyl group-containing cellulose; and an overcoat disposed on the conductive film. Also an electronic device including the transparent electrode.

Abstract: A graphene device and an electronic apparatus including the same are provided. According to example embodiments, the graphene device includes a transistor including a source, a gate, and a drain, an active layer through which carriers move, and a graphene layer between the gate and the active layer. The graphene layer may be configured to function both as an electrode of the active layer and a channel layer of the transistor.

Abstract: An electrically conductive thin film including a plurality of nanosheets including a doped titanium oxide represented by Chemical Formula 1 and having a layered crystal structure: (A?Ti1??)O2+???Chemical Formula 1 wherein, in Chemical Formula 1, ? is greater than 0, A is at least one dopant metal selected from Nb, Ta, V, W, Cr, and Mo, and ? is greater than 0 and less than 1. Also, an electronic device including the electrically conductive thin film.

Abstract: Methods of fabricating graphene using an alloy catalyst may include forming an alloy catalyst layer including nickel on a substrate and forming a graphene layer by supplying hydrocarbon gas onto the alloy catalyst layer. The alloy catalyst layer may include nickel and at least one selected from the group consisting of copper, platinum, iron and gold. When the graphene is fabricated, a catalyst metal that reduces solubility of carbon in Ni may be used together with Ni in the alloy catalyst layer. An amount of carbon that is dissolved may be adjusted and a uniform graphene monolayer may be fabricated.

Abstract: Provided is a graphene switching device including: a graphene layer formed on a substrate; a plurality of semiconductor nanowires on the substrate; a first electrode connected to a second end of the graphene layer; a second electrode on the substrate to face the first electrode so as to be connected to the plurality of semiconductor nanowires; a gate insulating layer on the substrate to cover the graphene layer; and a gate electrode on the gate insulating layer. The gate electrode and the plurality of semiconductor nanowires face each other with the graphene layer therebetween. At least one of the plurality of semiconductor nanowires is connected to at least one of the second electrode, the graphene layer, and the other of the plurality of semiconductor nanowires.

Abstract: An electrode structure includes: a first nonconductive layer; a first conductive layer disposed on the first nonconductive layer; a second nonconductive layer disposed on the first conductive layer; a second conductive layer disposed on the second nonconductive layer; and a third nonconductive layer disposed on the second conductive layer, where at least one of the first conductive layer and the second conductive layer includes a two-dimensional conductive material.

Abstract: Example embodiments relate to methods of manufacturing and transferring a larger-sized graphene layer. A method of transferring a larger-sized graphene layer may include forming a graphene layer, a protection layer, and an adhesive layer on a substrate and removing the substrate. The graphene layer may be disposed on a transferring substrate by sliding the graphene layer onto the transferring substrate.

Abstract: A method of preparing graphene includes forming a silicon carbide thin film on a substrate, forming a metal thin film on the silicon carbide thin film, and forming a metal composite layer and graphene on the substrate by heating the silicon carbide thin film and the metal thin film.

Abstract: Provided is a graphene switching device including: a graphene layer formed on a substrate; a plurality of semiconductor nanowires on the substrate; a first electrode connected to a second end of the graphene layer; a second electrode on the substrate to face the first electrode so as to be connected to the plurality of semiconductor nanowires; a gate insulating layer on the substrate to cover the graphene layer; and a gate electrode on the gate insulating layer. The gate electrode and the plurality of semiconductor nanowires face each other with the graphene layer therebetween. At least one of the plurality of semiconductor nanowires is connected to at least one of the second electrode, the graphene layer, and the other of the plurality of semiconductor nanowires.

Abstract: A method of forming a multi-layer graphene includes forming a stack of a graphitizing metal catalyst layer and graphene by repeatedly performing a cycle of first forming the graphitizing metal catalyst layer on a substrate, and then forming the graphene on the graphitizing metal catalyst layer, and removing the graphitizing metal catalyst layer.

Abstract: Graphene, a method of fabricating the same, and a transistor having the graphene are provided, the graphene includes a structure of carbon (C) atoms partially substituted with boron (B) atoms and nitrogen (N) atoms. The graphene has a band gap. The graphene substituted with boron and nitrogen may be used as a channel of a field effect transistor. The graphene may be formed by performing chemical vapor deposition (CVD) method using borazine or ammonia borane as a boron nitride (B-N) precursor.