Abstract: A micro element structure including a body, two electrodes, two solder patterns and a confinement structure is provided. The two electrodes are disposed on a side of the body. The two solder patterns are disposed on the two electrodes, respectively. The confinement structure protrudes relative to the body, wherein the confinement structure surrounds one of the electrodes and the solder pattern thereon, and at least a portion of the confinement structure is separated from the surrounded solder pattern with a gap. A display device is also provided.

Abstract: A micro light-emitting device includes an epitaxial structure, a first electrode, a second electrode and a conductive layer. The epitaxial structure includes a first-type semiconductor layer, a light-emitting layer, and a second-type semiconductor layer. The first-type semiconductor layer includes a first portion and a second portion. A bottom area of the first portion is smaller than a top area of the second portion. A thickness of the second portion is greater than 10% of a thickness of the first-type semiconductor layer. The first electrode is disposed on the epitaxial structure and located on the first portion of the first-type semiconductor layer. The second electrode is disposed on the epitaxial structure. The conductive layer is disposed between the first electrode and the first portion, wherein an orthographic projection area of the conductive layer on the first portion is greater than or equal to 90% of an area of the first portion.

Abstract: A micro light emitting diode including an epitaxy layer, a first pad, a second pad, a first ohmic contact metal, a second ohmic contact metal and at least one etch protection conductive layer is provided. The first pad and the second pad are electrically connected to a first type semiconductor layer and a second type semiconductor layer of the epitaxy layer, respectively. The first ohmic contact metal is disposed between the first type semiconductor layer and the first pad. The second ohmic contact metal is disposed between the second type semiconductor layer and the second pad. The at least one etch protection conductive layer is disposed between the first ohmic contact metal and the first pad and/or between the second ohmic contact metal and the second pad. A display panel is also provided.