Abstract: A device is disclosed that includes a memory bit cell, a first word line, a pair of metal islands and a pair of connection metal lines. The first word line is disposed in a first metal layer and is electrically coupled to the memory bit cell. The pair of metal islands are disposed in the first metal layer at opposite sides of the word line and are electrically coupled to a power supply. The pair of connection metal lines are disposed in a second metal layer and are configured to electrically couple the metal islands to the memory bit cell respectively.

Abstract: Provided herein are methods of treating a BRAF inhibitor resistant cancer in a subject. Also provided are methods of monitoring or evaluating the treatment of a cancer in a subject. Further provided are methods of diagnosing a cancer or disease associated with antibody production in a subject.

Abstract: A card connector includes an insulating housing, a shell covering on the insulating housing to define a card receiving space between the cover and the insulating housing for being inserted into a card along an insertion direction, a plurality of contacts received in the insulating housing and extended into the card receiving space, a first switch terminal and a second switch respectively positioned at a right side of the insulating housing. The first switch terminal includes a main section extended along the insertion direction, a first straight section and a second straight section successively and slantwise extended into the card receiving space form a free end of the first main section to respectively define a first slope and a second slope relative to the main section. The second switch terminal includes a contacting section extending beside the first straight section. The second slope is larger than the first slope.

Abstract: A card connector includes an insulating housing, a shell covering on the insulating housing to define a card receiving space between the cover and the insulating housing for being inserted into a card along an insertion direction, a plurality of contacts received in the insulating housing and extended into the card receiving space, a first switch terminal and a second switch respectively positioned at a right side of the insulating housing. The first switch terminal includes a main section extended along the insertion direction, a first straight section and a second straight section successively and slantwise extended into the card receiving space form a free end of the first main section to respectively define a first slope and a second slope relative to the main section. The second switch terminal includes a contacting section extending beside the first straight section. The second slope is larger than the first slope.

Abstract: A battery connector includes an insulating housing defining rear part and a front part protruded forwardly from a middle portion of the front surface of the rear part, and a plurality of contacts. The rear part defines a plurality of contact receiving cavities. Each contact receiving cavity extends from a front surface, through a top surface and to a rear surface of the rear part. The front part defines a plurality of notches. Each notch connects to the corresponding contact receiving cavity. Each contact includes a first contacting portion, a fixing hook and a fixing plate received in the contact receiving cavity defined at the rear surface, the top surface and the front surface, and a second contacting portion partially received in the notch and partially protruded out of the notch. The top portion of the rear part is sandwiched between the first contacting portion and the fixing plate.

Abstract: The portion of TDMA frames otherwise containing the sync word is eliminated for one or more data frames at the end of a TDMA data burst to provided added bandwidth for data payload or for a reduced bandwidth. Once a communication channel has been established and is in steady state mode (after receipt of one or more frames), the sync word is eliminated from the remaining frame structure. Drift of a local clock with respect to an incoming data stream is monitored using an oversampled or multiplied master clock to provide suitable resolution to determine an approximate position of an active edge of the master clock with respect to a bit or symbol being clocked. Any drift from center results in an adjustment of the local master clock. In a preferred embodiment, the drift is measured in a last bit or symbol of a received TDMA burst, and the master clock is adjusted to re-center the local master clock with respect to that last bit.

Abstract: A timing recovery circuit and method which determines whether a sample point in a generated bit sequence is early or late based on binary logic which is already available used in generating a bit sequence by comparing energy magnitudes of adjacent bits. The waveform of an input symbol is correlated against reference waveforms. When the incoming waveform does not perfectly match a reference waveform, symbol energy less than maximum is output indicating that the timing of the sampling points is either early or late. Symbol energy magnitudes between adjacent bits are then compared. Using the bit pattern of the generated bit sequence and the results of comparisons of energy magnitudes of adjacent bits, it is determined whether the timing of the sampling points is early or whether it is late.

Abstract: The portion of TDMA frames otherwise containing the sync word is eliminated for one or more data frames at the end of a TDMA data burst to provided added bandwidth for data payload or for a reduced bandwidth. Once a communication channel has been established and is in steady state mode (after receipt of one or more frames), the sync word is eliminated from the remaining frame structure. Drift of a local clock with respect to an incoming data stream is monitored using an oversampled or multiplied master clock to provide suitable resolution to determine an approximate position of an active edge of the master clock with respect to a bit or symbol being clocked. Any drift from center results in an adjustment of the local master clock. In a preferred embodiment, the drift is measured in a last bit or symbol of a received TDMA burst, and the master clock is adjusted to re-center the local master clock with respect to that last bit.

Abstract: A cost-effective continuous phase logic-based modulator and demodulator are provided to allow communications using binary frequency shift keying (BFSK) as well as M-ary FSK techniques. The modulator of the 1-bit precision modem architecture is based on a 1-bit precision numerically controlled oscillator (NCO), which provides complete programmability with respect to a frequency of the 1-bit precision logic-based modulator and/or demodulator. The output of the 1-bit precision NCO is upconverted to an intermediate frequency using a simple logic function, i.e., XNOR logic. The undesirable portion of the upconverted signal may be suppressed using I/Q image rejection, and/or an appropriate bandpass filter may be used. A band limited, hard limited signal at the high IF is presented to the 1-bit precision demodulator as a receive IF signal, which is treated as a 1-bit quantization of the signal. The receive IF signal is digitally down-converted to a low IF signal to produce an alias signal at the low IF frequency.

Abstract: A hydrophilic coating composition for hydrophilically coating a metallic surface. The coating composition comprises a fluorocarbon-containing hydrophilic polymer comprising units of hydrophilic monomer and fluorocarbon-containing hydrophobic comonomer. The coating composition produces hydrophilic coatings on the metallic surface having a contact angle below about 50°.

Abstract: The present invention relates to the process for preparing terpolymer of tetrafluoroethylene (TFE), ethylene (E), and a third monomer. According to the present invention, dicarbonate peroxide is used as initiator, 1,1,2-trichloro-1,2,2-trifluoro-ethane as the reaction medium and compounds of molecular formula C.sub.n R.sub.2n+2, wherein, n=0,1, or 2;R=H, Cl or F, are gaseous chain telomeric agents to control the average molecular weight of copolymers, the formula of third monomer is CF.sub.2 XCOCF.sub.2 X' or ##STR1## wherein X=X'=Cl or F, R.sub.1 =CF.sub.3 or CH.sub.3,R.sub.2 =CF.sub.3, CH.sub.3 or H, and R.sub.3 =H or F, usually the molar ratio of TFE to E is from 60:40 to 40:60 with the content of the third monomer being from 0.1% to 10%, based on the total molar amount of TFE and E.