Abstract: The present invention relates to a composition for an organic optoelectronic device, the composition comprising: a first host compound represented by Chemical Formula 1 below; and a second host compound represented by Chemical Formula 2 below, to an organic optoelectronic device using the composition and a display device. The details of Chemical Formulas 1 and 2 above are as defined in the specification.

Abstract: The present invention relates to a composition for an organic optoelectronic device, the composition comprising: a first host compound represented by Chemical Formula 1 below; and a second host compound represented by Chemical Formula 2 below, to an organic optoelectronic device using the composition and a display device. The details of Chemical Formulas 1 and 2 above are as defined in the specification.

Abstract: A method of manufacturing a semiconductor element includes placing a structure, the structure including a substrate and a first metal-containing film disposed on the substrate, fluorinating at least one atomic layer from an exposed surface of the first metal-containing film by supplying a fluorinating gas to the structure to form a fluorinated atomic layer, and etching the fluorinated atomic layer of the first metal-containing film by supplying an etching gas to the structure, wherein the etching gas includes an inert gas in a plasma state.

Abstract: Disclosed is a method of operating a cohort extracting apparatus, the method including: obtaining cohort entry criteria and extracting events corresponding to the cohort entry criteria from a clinical data warehouse; generating an initial history table including an event identifier, a patient identifier, and a bit string indicating satisfaction of criteria of an initial step for each extracted event; obtaining criteria of a current step, identifying, among patients included in a history table of a just previous step, current step patients having an event corresponding to the criteria of the current step, and updating a bit string for each event of the current step patients included in the history table of the just previous step, and generating a history table of the current step by adding new events extracted in the current step; and sequentially generating a history table for each step, and then generating a cohort table by using a history table of a final step.

Abstract: A vertical type non-volatile memory device includes a substrate having a cell array area of a block unit and an extension area, a vertical contact disposed in the extension area, a plurality of vertical channel structures provided on the substrate in the cell array area, a plurality of dummy channel structures provided on the substrate in the extension area, and a plurality of gate electrode layers and a plurality of interlayer insulation layers stacked alternately on the substrate. In an electrode pad connected to the vertical contact, dummy channel structures are disposed at both sides of the vertical contact and a horizontal cross-sectional surface of each of the plurality of dummy channel structures has a shape which is longer in one direction.

Abstract: A display device includes a first substrate where a display area and a non-display are defined, wherein a plurality of pixels are arranged at the display area and the non-display area surrounds the display area; a dam surrounding the display area and arranged at the non-display area; an organic light emitting diode provided in the display area; an encapsulation film disposed on the organic light emitting diode; a buffer layer disposed on the encapsulation film; an insulating film disposed on the buffer layer; a pad area arranged outside the dam, wherein the buffer layer and the insulating film extend from the display area to the pad area; a link line disposed between the dam and the first substrate; and a routing line provided on the insulating layer between the display area and the pad area.

Abstract: A semiconductor memory device may be formed by a method of fabricating the same.

Abstract: A method of fabricating a semiconductor device includes forming interconnection structures on a lower structure. An insulating layer is formed between the interconnection structures. The insulating layer is patterned to form insulating patterns. An insulating fence is formed between the insulating patterns. A first protective pattern is formed on the insulating fence. The insulating patterns are etched after the forming of the first protective pattern to form contact holes. Contact plugs are formed in the contact holes.

Abstract: A method of fabricating a semiconductor device includes forming an insulating layer and a peripheral structure on first and second regions of the substrate, forming first and second mask layers on the insulating layer and the peripheral structure, patterning the first and second mask layers to form first and second mask structures on the first and second regions, etching the insulating layer using the first and second mask structures as an etching mask, to form insulating patterns, forming a sacrificial layer in spaces between two adjacent insulating patterns on the first region, removing the second mask pattern on the first region by a dry etching process, forming an anti-oxidation layer on a surface of the second mask layer on the second region after removing the second mask pattern on the first region, and removing the second mask layer with the anti-oxidation layer by a wet etching process.

Abstract: A display device includes a first substrate where a display area and a non-display are defined, wherein a plurality of pixels are arranged at the display area and the non-display area surrounds the display area; a dam surrounding the display area and arranged at the non-display area; an organic light emitting diode provided in the display area; an encapsulation film disposed on the organic light emitting diode; a buffer layer disposed on the encapsulation film; an insulating film disposed on the buffer layer; a pad area arranged outside the dam, wherein the buffer layer and the insulating film extend from the display area to the pad area; a link line disposed between the dam and the first substrate; and a routing line provided on the insulating layer between the display area and the pad area.

Abstract: A display device and a method of manufacturing the same are disclosed, in which arcing may be prevented from occurring. The display device comprises a first substrate including a display area on which pixels are arranged, and a non-display area surrounding the display area; a dam surrounding the display area, arranged on the non-display area; a pad electrode arranged outside the dam; and an encapsulation film covering the display area and including a first inorganic film and a second inorganic film arranged on the first inorganic film, wherein the second inorganic film is overlapped with the pad electrode.

Abstract: A display device includes a first substrate where a display area and a non-display are defined, wherein a plurality of pixels are arranged at the display area and the non-display area surrounds the display area; a dam surrounding the display area and arranged at the non-display area; an organic light emitting diode provided in the display area; an encapsulation film disposed on the organic light emitting diode; a buffer layer disposed on the encapsulation film; an insulating film disposed on the buffer layer; a pad area arranged outside the dam, wherein the buffer layer and the insulating film extend from the display area to the pad area; a link line disposed between the dam and the first substrate; and a routing line provided on the insulating layer between the display area and the pad area.

Abstract: Disclosed are a touch screen panel and a display apparatus with integrated touch screen, in which a pattern inspection process and a repair process are easily performed on touch electrodes. The touch screen panel includes a plurality of first touch electrodes, a plurality of second touch electrodes spaced apart from the plurality of first touch electrodes, a plurality of bridge electrodes electrically connecting the plurality of second touch electrodes, and a plurality of identification patterns disposed in respective outer portions of the plurality of first touch electrodes and the plurality of second touch electrodes.

Abstract: Disclosed is a display device with integrated touch screen, which can prevent a first touch electrode or a second touch electrode from being short-circuited with a bridge electrode through an opening. The display device includes first electrodes on a first substrate, a light emitting layer on the first electrodes, a second electrode on the light emitting layer, an encapsulation layer on the second electrode, a bridge electrode and a dummy electrode on the encapsulation layer, an insulation layer covering the bridge electrode and the dummy electrode, and a first touch electrode and a second touch electrode on the insulation layer. The first touch electrode is electrically connected to the bridge electrode, and bridge electrode is spaced apart from the dummy electrode.

Abstract: A display device and a method of manufacturing the same are disclosed, in which arcing may be prevented from occurring. The display device comprises a first substrate including a display area on which pixels are arranged, and a non-display area surrounding the display area; a dam surrounding the display area, arranged on the non-display area; a pad electrode arranged outside the dam; and an encapsulation film covering the display area and including a first inorganic film and a second inorganic film arranged on the first inorganic film, wherein the second inorganic film is overlapped with the pad electrode.

Abstract: A display device and a method of manufacturing the same are disclosed, in which arcing may be prevented from occurring. The display device comprises a first substrate including a display area on which pixels are arranged, and a non-display area surrounding the display area; a dam surrounding the display area, arranged on the non-display area; a pad electrode arranged outside the dam; and an encapsulation film covering the display area and including a first inorganic film and a second inorganic film arranged on the first inorganic film, wherein the second inorganic film is overlapped with the pad electrode.

Abstract: A vertical type non-volatile memory device includes a substrate having a cell array area of a block unit and an extension area, a vertical contact disposed in the extension area, a plurality of vertical channel structures provided on the substrate in the cell array area, a plurality of dummy channel structures provided on the substrate in the extension area, and a plurality of gate electrode layers and a plurality of interlayer insulation layers stacked alternately on the substrate. In an electrode pad connected to the vertical contact, dummy channel structures are disposed at both sides of the vertical contact and a horizontal cross-sectional surface of each of the plurality of dummy channel structures has a shape which is longer in one direction.

Abstract: A display device includes a first substrate where a display area and a non-display are defined, wherein a plurality of pixels are arranged at the display area and the non-display area surrounds the display area; a dam surrounding the display area and arranged at the non-display area; an organic light emitting diode provided in the display area; an encapsulation film disposed on the organic light emitting diode; a buffer layer disposed on the encapsulation film; an insulating film disposed on the buffer layer; a pad area arranged outside the dam, wherein the buffer layer and the insulating film extend from the display area to the pad area; a link line disposed between the dam and the first substrate; and a routing line provided on the insulating layer between the display area and the pad area.

Abstract: A display apparatus comprises a light emitting device layer that includes a first electrode arranged on a first substrate, a light emitting layer arranged on the first electrode, and a second electrode arranged on the light emitting layer; and a touch sensing layer arranged on the light emitting device layer.