Abstract: A method for preparing a p-type gallium oxide film is provided. An MxGa1-xN target material is subjected to ablating, sputtering or evaporation in a vacuum chamber via physical vapor deposition to obtain MxGa1-xN clusters, where M is selected from the group consisting of Al, Sc, In, Y and Lu, and 0<x<1. The MxGa1-xN clusters are oxidized by O2 to obtain M-N co-doped p-type gallium oxide film on a substrate. The MxGa1-xN target material is prepared from MN powder and GaN powder through ball milling, pressing and sintering. A p-type gallium oxide film prepared by the method, and its application in the manufacturing of solar-blind ultraviolet detection devices and high-power electronic devices are also provided.

Abstract: A method for preparing a p-type gallium oxide film is provided. An MxGa1-xN target material is subjected to ablating, sputtering or evaporation in a vacuum chamber via physical vapor deposition to obtain MxGa1-xN clusters, where M is selected from the group consisting of Al, Sc, In, Y and Lu, and 0<x<1. The MxGa1-xN clusters are oxidized by O2 to obtain M-N co-doped p-type gallium oxide film on a substrate. The MxGa1-xN target material is prepared from MN powder and GaN powder through ball milling, pressing and sintering. A p-type gallium oxide film prepared by the method, and its application in the manufacturing of solar-blind ultraviolet detection devices and high-power electronic devices are also provided.

Abstract: A (GaMe)2O3 ternary alloy material, its preparation method and application in a solar-blind ultraviolet photodetector are provided. The (GaMe)2O3 ternary alloy material of the present invention is formed by solid solution of Ga2O3 and Me2O3 in a molar ratio of 99:1 to 50:50, wherein the Me is any one of Lu, Sc, or Y. The (GaMe)2O3 ternary alloy material of the present invention can be used to prepare the active layer of a solar-blind ultraviolet photodetector. In the present invention, the band gap of Me2O3 is higher than that of Ga2O3, and Ga3+ ions in Ga2O3 are partially replaced by Me3+ ions to obtain a higher band gap (GaMe)2O3 ternary alloy material to reduce the dark current of the device and promote the blue shift of the cut-off wavelength to within 280 nm.

Abstract: A (GaMe)2O3 ternary alloy material, its preparation method and application in a solar-blind ultraviolet photodetector are provided. The (GaMe)2O3 ternary alloy material of the present invention is formed by solid solution of Ga2O3 and Me2O3 in a molar ratio of 99:1 to 50:50, wherein the Me is any one of Lu, Sc, or Y. The (GaMe)2O3 ternary alloy material of the present invention can be used to prepare the active layer of a solar-blind ultraviolet photodetector. In the present invention, the band gap of Me2O3 is higher than that of Ga2O3, and Ga3+ ions in Ga2O3 are partially replaced by Me3+ ions to obtain a higher band gap (GaMe)2O3 ternary alloy material to reduce the dark current of the device and promote the blue shift of the cut-off wavelength to within 280 nm.