Abstract: A modified T cell comprising a functional exogenous receptor is provided. The functional exogenous receptor comprises: (a) an extracellular ligand binding domain, (b) a transmembrane domain, and (c) an intracellular signaling domain (ISD) comprising a chimeric signaling domain (CMSD), wherein the CMSD comprises a plurality of Immune-receptor Tyrosine-based Activation Motifs (ITAMs) optionally connected by one or more linkers. Further provided are vectors, methods of producing, pharmaceutical compositions, kits, and methods of treatment thereof.

Abstract: A chimeric antigen receptor (CAR) comprising a polypeptide comprising an extracellular antigen binding domain comprising a first BCMA binding moiety and a second BCMA binding moiety, wherein the first BCMA binding moiety is a first anti-BCMA single domain antibody, and the second BCMA binding moiety is a second anti-BCMA sdAb; and wherein each of the first and second sdAb is a VHH domain.

Abstract: A modified T cell comprises: i) an exogenous Negative Regulatory Factor (Nef) protein; and ii) a functional exogenous receptor comprising: (a) an extracellular ligand binding domain, (b) a transmembrane domain, and (c) an intracellular signaling domain (ISD) comprising a chimeric signaling domain (CMSD), wherein the CMSD comprises one or a plurality of Immune-receptor Tyrosine-based Activation Motifs (ITAMs), wherein the plurality of CMSD ITAMs are optionally connected by one or more linkers. Provided are also Nef proteins (e.g., non-naturally occurring Nef), and modified T cells comprising such Nef proteins. Provided are methods of making and uses thereof.

Abstract: A modified T cell comprising a functional exogenous receptor is provided. The functional exogenous receptor comprises: (a) an extracellular ligand binding domain, (b) a transmembrane domain, and (c) an intracellular signaling domain (ISD) comprising a chimeric signaling domain (CMSD), wherein the CMSD comprises a plurality of Immune-receptor Tyrosine-based Activation Motifs (ITAMs) optionally connected by one or more linkers. Further provided are vectors, methods of producing, pharmaceutical compositions, kits, and methods of treatment thereof.

Abstract: Provided are a method of producing a modified T cell comprising introducing into a precursor T cell a first nucleic acid encoding a Nef protein, wherein the Nef protein upon expression results in down-modulation of the endogenous T cell receptor (TCR) in the modified T cell, wherein the modified T cell furthermore expresses a functional exogenous receptor, such as an engineered TCR (e.g., chimeric TCR), T cell antigen coupler (TAC), TAC-like chimeric receptor, or a chimeric antigen receptor (CAR), the modified cell obtained by the method and the pharmaceutical composition comprising the modified T cell. Also provided is a non-naturally occurring Nef protein comprising one or more mutations.

Abstract: A terahertz wave fast modulator based on coplanar waveguide combining with transistor is disclosed. The terahertz waves are inputted through a straight waveguide structure, and then are coupled through a probe structure onto a core part of the present invention, which includes a suspended coplanar waveguide structure and a modulation unit with high electron mobility transistor, wherein the suspended coplanar waveguide structure is formed by three metal wires and a semiconductor substrate; and the modulation unit with high electron mobility transistor is located between adjacent metal transmission strips of the coplanar waveguide structure. Transmission characteristics of the terahertz waves in the coplanar waveguide structure are changed through the switching on/off of the modulation unit, so as to fast modulate the amplitudes and phases of the terahertz waves, and finally the modulated terahertz waves are transmitted through a probe—waveguide structure.

Abstract: A spatial terahertz wave phase modulator based on the high electron mobility transistor is provided. The phase modulator combines the quick-response high electron mobility transistor with a novel metamaterial resonant structure, so as to rapidly modulate terahertz wave phases in a free space. The phase modulator includes a semiconductor substrate, an HEMT epitaxial layer, a periodical metamaterial resonant structure and a muff-coupling circuit. A concentration of 2-dimensional electron gas in the HEMT epitaxial layer is controlled through loading voltage signals, so as to change an electromagnetic resonation mode of the metamaterial resonant structure, thereby achieving phase modulation of terahertz waves. The phase modulator has a phase modulation depth of over 90 degrees within a large bandwidth, and a maximum phase modulation depth is about 140 degrees. Furthermore, the phase modulator is simple in structure, easy to machine, high in modulation speed, convenient to use, and easy to package.

Abstract: A terahertz wave fast modulator based on coplanar waveguide combining with transistor is disclosed. The terahertz waves are inputted through a straight waveguide structure, and then are coupled through a probe structure onto a core part of the present invention, which includes a suspended coplanar waveguide structure and a modulation unit with high electron mobility transistor, wherein the suspended coplanar waveguide structure is formed by three metal wires and a semiconductor substrate; and the modulation unit with high electron mobility transistor is located between adjacent metal transmission strips of the coplanar waveguide structure. Transmission characteristics of the terahertz waves in the coplanar waveguide structure are changed through the switching on/off of the modulation unit, so as to fast modulate the amplitudes and phases of the terahertz waves, and finally the modulated terahertz waves are transmitted through a probe—waveguide structure.

Abstract: A spatial terahertz wave phase modulator based on the high electron mobility transistor is provided. The phase modulator combines the quick-response high electron mobility transistor with a novel metamaterial resonant structure, so as to rapidly modulate terahertz wave phases in a free space. The phase modulator includes a semiconductor substrate, an HEMT epitaxial layer, a periodical metamaterial resonant structure and a muff-coupling circuit. A concentration of 2-dimensional electron gas in the HEMT epitaxial layer is controlled through loading voltage signals, so as to change an electromagnetic resonation mode of the metamaterial resonant structure, thereby achieving phase modulation of terahertz waves. The phase modulator has a phase modulation depth of over 90 degrees within a large bandwidth, and a maximum phase modulation depth is about 140 degrees. Furthermore, the phase modulator is simple in structure, easy to machine, high in modulation speed, convenient to use, and easy to package.