Patents by Inventor Yunfang GUAN

Yunfang GUAN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • InGaAs film grown on Si substrate and method for preparing the same
    Patent number: 9870918
    Abstract: The present invention discloses an InGaAs film grown on a Si substrate, which comprises a Si substrate, a low temperature In0.4Ga0.6As buffer layer, a high temperature In0.4Ga0.6As buffer layer and an In0.53Ga0.47As epitaxial film, arranged sequentially, wherein the low temperature In0.4Ga0.6As buffer layer is an In0.4Ga0.6As buffer layer grown at the temperature of 350˜380° C.; the high temperature In0.4Ga0.6As buffer layer is an In0.4Ga0.6As buffer layer grown at the temperature of 500˜540° C., and the sum of the thickness of the low temperature In0.4Ga0.6As buffer layer and the thickness of the high temperature In0.4Ga0.6As buffer layer is 10˜20 nm. The invention further discloses a method for preparing the InGaAs film. The InGaAs film grown on the Si substrate of the present invention has good crystal quality, is almost completely relaxed, and has a simple preparation process.
    Type: Grant
    Filed: December 5, 2014
    Date of Patent: January 16, 2018
    Assignee: SOUTH CHINA UNIVERSITY OF TECHNOLOGY
    Inventors: Guoqiang Li, Fangliang Gao, Yunfang Guan, Lei Wen, Jingling Li, Shuguang Zhang
  • INGAAS FILM GROWN ON SI SUBSTRATE AND METHOD FOR PREPARING THE SAME
    Publication number: 20160218006
    Abstract: The present invention discloses an InGaAs film grown on a Si substrate, which comprises a Si substrate, a low temperature In0.4Ga0.6As buffer layer, a high temperature In0.4Ga0.6As buffer layer and an In0.53Ga0.47As expitaxial film, arranged sequentially, wherein the low temperature In0.4Ga0.6As buffer layer is an In0.4Ga0.6As buffer layer grown at the temperature of 350˜380®C.; the high temperature In0.4Ga0.6As buffer layer is an In0.4Ga0.6As buffer layer grown at the temperature of 500˜540° C., and the sum of the thickness of the low temperature In0.4Ga0.6As buffer layer and the thickness of the high temperature In0.4Ga0.6As buffer layer is 10˜20 nm. The invention further discloses a method for preparing the InGaAs film. The InGaAs film grown on the Si substrate of the present invention has good crystal quality, is almost completely relaxed, and has a simple preparation process.
    Type: Application
    Filed: December 5, 2014
    Publication date: July 28, 2016
    Applicant: SOUTH CHINA UNIVERSITY OF TECHNOLOGY
    Inventors: Guoqiang LI, Fangliang GAO, Yunfang GUAN, Lei WEN, Jingling LI, Shuguang ZHANG