Patents by Inventor Yunfei Fu

Yunfei Fu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250006503
    Abstract: The disclosure relates to a semiconductor structure and a method for forming it. The method includes: providing a substrate; forming an initial carbon film layer on the surface of the substrate, the initial carbon film layer includes at least SP2 hybrid bonds; implanting modifying ions into the initial carbon film layer to convert the SP2 hybrid bonds into SP3 hybrid bonds to obtain the target carbon film layer. Applying the method can increase the hardness of the carbon film layer. In addition the etching selectivity ratio increases during the etch process using the carbon film as a hard mask, because the carbon film layer is not easily deformed in etch, which can ensure the patterned shape with improved etch window so to increase the product yield. Meanwhile, higher carbon hardness of the film layer can properly reduce the carbon film thickness during etch, saving carbon materials and reducing manufacturing costs.
    Type: Application
    Filed: August 1, 2022
    Publication date: January 2, 2025
    Inventors: Ting LIAN, Yunfei FU, Yuheng LIU
  • Patent number: 11778930
    Abstract: A manufacturing method of a resistive memory device includes the following steps. A first electrode is formed. A first metal oxide layer is formed on the first electrode, and the first metal oxide layer includes first metal atoms. A multilayer insulator structure is formed on the first metal oxide layer. A second metal oxide layer is formed on the multilayer insulator structure. The second metal oxide layer includes second metal atoms, the multilayer insulator structure includes third metal atoms, and each of the third metal atoms is identical to each of the second metal atoms. A second electrode is formed on the second metal oxide layer. The multilayer insulator structure is disposed between the first metal oxide layer and the second metal oxide layer in a vertical direction, and an atomic percent of the third metal atoms in the multilayer insulator structure changes in the vertical direction.
    Type: Grant
    Filed: January 17, 2022
    Date of Patent: October 3, 2023
    Assignee: United Semiconductor (Xiamen) Co., Ltd.
    Inventors: Yuheng Liu, Yunfei Fu, Chih-Chien Huang, Kuo Liang Huang, Wen Yi Tan
  • Publication number: 20230019475
    Abstract: A method for manufacturing a semiconductor structure includes the following: providing a substrate; forming a semiconductor layer on the substrate; performing P-type doping on the semiconductor layer to transform the semiconductor layer into an initial mask layer; performing a first patterning treatment on the initial mask layer to form a mask layer having an opening; and performing a second patterning on the substrate by taking the mask layer as a mask and using an etching process. An etching rate of the substrate is greater than an etching rate of the mask layer during the etching process.
    Type: Application
    Filed: September 23, 2022
    Publication date: January 19, 2023
    Applicant: CHANGXIN MEMORY TECHNOLOGIES, INC.
    Inventors: Ting LIAN, YUHENG LIU, Yunfei FU, Dingdong KUANG
  • Publication number: 20220148770
    Abstract: The invention provides a method for adjusting the resistance value of a thin film resistor layer in a semiconductor structure, which comprises forming the thin film resistor layer, the material of the thin film resistor layer comprises titanium nitride, and the thin film resistor layer has an original resistance value, a mask layer with tensile force is formed above the thin film resistor layer, and the mask layer with tensile force changes a lattice size of the thin film resistor layer, so that the lattice size of the thin film resistor layer becomes larger and the original resistance value of the thin film resistor layer is reduced.
    Type: Application
    Filed: December 9, 2020
    Publication date: May 12, 2022
    Inventors: Wei-Chun Chang, Yunfei Fu, You-Di Jhang, Chin-Chun Huang, WEN YI TAN
  • Publication number: 20220140236
    Abstract: A resistive memory device includes a first electrode, a second electrode, a first metal oxide layer, a second metal oxide layer, and a multilayer insulator structure. The first metal oxide layer is disposed between the first electrode and the second electrode in a vertical direction. The second metal oxide layer is disposed between the first metal oxide layer and the second electrode in the vertical direction. The multilayer insulator structure is disposed between the first metal oxide layer and the second metal oxide layer in the vertical direction. The first metal oxide layer includes first metal atoms, the second metal oxide layer includes second metal atoms, and the multilayer insulator structure includes third metal atoms. Each of the third metal atoms is identical to each of the second metal atoms, and an atomic percent of the third metal atoms in the multilayer insulator structure gradually changes in the vertical direction.
    Type: Application
    Filed: January 17, 2022
    Publication date: May 5, 2022
    Applicant: United Semiconductor (Xiamen) Co., Ltd.
    Inventors: Yuheng Liu, Yunfei Fu, Chih-Chien Huang, KUO LIANG HUANG, WEN YI TAN
  • Patent number: 11283013
    Abstract: A resistive memory device includes a first electrode, a second electrode, a first metal oxide layer, a second metal oxide layer, and a multilayer insulator structure. The first metal oxide layer is disposed between the first electrode and the second electrode in a vertical direction. The second metal oxide layer is disposed between the first metal oxide layer and the second electrode in the vertical direction. The multilayer insulator structure is disposed between the first metal oxide layer and the second metal oxide layer in the vertical direction. The first metal oxide layer includes first metal atoms, the second metal oxide layer includes second metal atoms, and the multilayer insulator structure includes third metal atoms. Each of the third metal atoms is identical to each of the second metal atoms, and an atomic percent of the third metal atoms in the multilayer insulator structure gradually changes in the vertical direction.
    Type: Grant
    Filed: June 18, 2020
    Date of Patent: March 22, 2022
    Assignee: United Semiconductor (Xiamen) Co., Ltd.
    Inventors: Yuheng Liu, Yunfei Fu, Chih-Chien Huang, Kuo-Liang Huang, Wen Yi Tan
  • Publication number: 20210359204
    Abstract: A resistive memory device includes a first electrode, a second electrode, a first metal oxide layer, a second metal oxide layer, and a multilayer insulator structure. The first metal oxide layer is disposed between the first electrode and the second electrode in a vertical direction. The second metal oxide layer is disposed between the first metal oxide layer and the second electrode in the vertical direction. The multilayer insulator structure is disposed between the first metal oxide layer and the second metal oxide layer in the vertical direction. The first metal oxide layer includes first metal atoms, the second metal oxide layer includes second metal atoms, and the multilayer insulator structure includes third metal atoms. Each of the third metal atoms is identical to each of the second metal atoms, and an atomic percent of the third metal atoms in the multilayer insulator structure gradually changes in the vertical direction.
    Type: Application
    Filed: June 18, 2020
    Publication date: November 18, 2021
    Inventors: Yuheng Liu, Yunfei Fu, Chih-Chien Huang, Kuo-Liang Huang, WEN YI TAN