Abstract: A method for making a bonded article, wherein a thin glass substrate is bonded on a support substrate in the absence of any interlayer by an electrostatic adhesion process with the assistance of external pressure, the pressure is applied constantly or stepwise during the adhesion process by use of a tool such as a roll or a wheel or other movable device with curved surface. The bonded article has no defects, e.g. bubbles or inclusions, in the bonded interface, which benefits transportation of the thin glass substrate and its post-processing as well. Such defect-free bonded article is also disclosed. Pressure supported electrostatic adhesion, initiated by electrostatic charges adhesion of a two members, e.g. a substrate member and a support member, is enabled to minimize, prevent and exclude defects, distortion between the adhered surfaces.

Abstract: A low CTE boro-aluminosilicate glass having a low brittleness for use in wafer-level-packaging (WLP) applications is disclosed. The glass comprises a composition in mol-% of SiO2: 60-85, Al2O3: 1-17, B2O3: 8-20, Na2O: 0-5, K2O: 0-5, MgO: 0-10, CaO: 0-10, SrO: 0-10, and BaO: 0-10. An average number of non-bridging oxygen per polyhedron (NBO) is equal to or larger than ?0.2 and a ratio B2O3/Al2O3 is equal to or larger than 0.5. The NBO is defined as NBO=2×Omol/(Simol+Almol+Bmol)?4. A glass carrier wafer made from the low CTE boro-aluminosilicate glass and a use thereof as a glass carrier wafer for the processing of a silicon substrate are also disclosed, as well as a method for providing a low CTE boro-aluminosilicate glass.

Abstract: A flexible circuit board, and an optical transceiver assembly and an optical module that have such flexible circuit board. The flexible circuit board includes a substrate body, a transmission metal layer formed on at least one surface of the substrate body, a strengthening layer formed on the transmission metal layer, and a surface metal layer formed on a portion of an outer surface of the strengthening layer. The surface metal layer constitutes a securing portion for securing and connecting to an external element. A portion of the flexible circuit board that is not covered by the surface metal layer constitutes a connecting portion that connects to the securing portion. The surface metal layer is electrically connected to the transmission metal layer.

Abstract: A flexible circuit board, and an optical transceiver assembly and an optical module that have such flexible circuit board. The flexible circuit board includes a substrate body, a transmission metal layer formed on at least one surface of the substrate body, a strengthening layer formed on the transmission metal layer, and a surface metal layer formed on a portion of an outer surface of the strengthening layer. The surface metal layer constitutes a securing portion for securing and connecting to an external element. A portion of the flexible circuit board that is not covered by the surface metal layer constitutes a connecting portion that connects to the securing portion. The surface metal layer is electrically connected to the transmission metal layer.

Abstract: A flexible circuit board, and an optical transceiver assembly and an optical module that have such flexible circuit board. The flexible circuit board includes a substrate body, a transmission metal layer formed on at least one surface of the substrate body, a strengthening layer formed on the transmission metal layer, and a surface metal layer formed on a portion of an outer surface of the strengthening layer. The surface metal layer constitutes a securing portion for securing and connecting to an external element. A portion of the flexible circuit board that is not covered by the surface metal layer constitutes a connecting portion that connects to the securing portion. The surface metal layer is electrically connected to the transmission metal layer.

Abstract: A low CTE boro-aluminosilicate glass having a low brittleness for use in wafer-level-packaging (WLP) applications is disclosed. The glass comprises a composition in mol-% of SiO2: 60-85, Al2O3: 1-17, B2O3: 8-20, Na2O: 0-5, K2O: 0-5, MgO: 0-10, CaO: 0-10, SrO: 0-10, and BaO: 0-10. An average number of non-bridging oxygen per polyhedron (NBO) is equal to or larger than ?0.2 and a ratio B2O3/Al2O3 is equal to or larger than 0.5. The NBO is defined as NBO=2×Omol/(Simol+Almol+Bmol)?4. A glass carrier wafer made from the low CTE boro-aluminosilicate glass and a use thereof as a glass carrier wafer for the processing of a silicon substrate are also disclosed, as well as a method for providing a low CTE boro-aluminosilicate glass.

Abstract: A method for making a bonded article, wherein a thin glass substrate is bonded on a support substrate in the absence of any interlayer by an electrostatic adhesion process with the assistance of external pressure, the pressure is applied constantly or stepwise during the adhesion process by use of a tool such as a roll or a wheel or other movable device with curved surface. The bonded article has no defects, e.g. bubbles or inclusions, in the bonded interface, which benefits transportation of the thin glass substrate and its post-processing as well. Such defect-free bonded article is also disclosed. Pressure supported electrostatic adhesion, initiated by electrostatic charges adhesion of a two members, e.g. a substrate member and a support member, is enabled to minimize, prevent and exclude defects, distortion between the adhered surfaces.