Abstract: Embodiments of the present disclosure provide a plasma-enhanced atomic layer deposition apparatus and a method thereof. The apparatus includes a precursor supply device communicating with gas inlet structures of two process chambers and configured to selectively provide a precursor or a purge gas to at least one of the two process chambers, a reaction gas supply device communicating with the gas inlet structures of the two process chambers and configured to selectively provide a reaction gas to at least one of the two process chambers, a radio frequency device connected to the two process chambers and configured to selectively output radio frequency power to at least one of the two process chambers, and a pressure adjustment device communicating with exhaust openings of the two process chambers and configured to independently control chamber pressures of the two process chambers.

Abstract: A semiconductor process chamber includes: a reaction chamber; a transfer chamber below the reaction chamber connected to the transfer chamber through a bottom opening; a base with a lifting shaft connected to a bottom of the base, where the base is able to rise and descend between the reaction chamber and the transfer chamber through the bottom opening; and an elastic annular sealing structure. The annular sealing structure is below the base and surrounding the lifting shaft of the base. When the base descends into the transfer chamber, the base presses down and compress the annular sealing structure; and when the base rises into the reaction chamber and pressure on the annular sealing structure is released, the annular sealing structure stretches until it abuts a bottom wall of the reaction chamber. to seal the bottom opening.

Abstract: A semiconductor processing apparatus includes a process chamber, a gas intake device, a base, and a flow guide structure. The process chamber includes a process area and a transfer area arranged from top to bottom, the gas intake device is disposed at a top of the process chamber for introducing a process gas into the process area. The base is vertically movable and is disposed in the transfer area for carrying a wafer. The flow guide structure is connected to a gas supply source, and fixedly attached to the base; and when the base is located at a process position, the flow guide structure is configured to blow a gas outward to an outer peripheral surface. An exhaust structure is disposed at the sidewall of the process chamber and is configured to discharge the gas blown out of the flow guide structure when the base is located at the process position.

Abstract: Disclosed are compounds having the formula: (I) wherein q, r, s, A, B, C, RA1, RA2, RB1, RB2, RC1, RC2, R3, R4, R5, R6, R14, R15, R16, R17, Rx, and Ry are as defined herein, or a tautomer thereof, or a salt, particularly a pharmaceutically acceptable salt, thereof.

Abstract: Disclosed are compounds having the formula: (I) wherein q, r, s, A, B, C, RA1, RA2, RB1, RB2, RC1, RC2, R3, R4, R5, R6, R14, R15, R16, R17, Rx, and Ry are as defined herein, or a tautomer thereof, or a salt, particularly a pharmaceutically acceptable salt, thereof.