Patents by Inventor Yung Bin Chung

Yung Bin Chung has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210074785
    Abstract: A display device includes: a first semiconductor layer on a first buffer layer, and including a first active layer; a first gate insulating layer on the first semiconductor layer, and covering the first active layer; a first conductive layer on the first gate insulating layer, and including a first gate electrode; a second conductive layer on the first conductive layer, and including a first source/drain electrode; a first interlayer insulating layer on the first conductive layer; a second semiconductor layer on the first interlayer insulating layer, and including a second active layer; a second gate insulating layer on the second semiconductor layer, and covering the second active layer; and a third conductive layer on the second gate insulating layer, and including a second gate electrode and a second source/drain electrode. The first gate insulating layer and the second gate insulating layer include different insulating materials from each other.
    Type: Application
    Filed: May 11, 2020
    Publication date: March 11, 2021
    Inventors: Doo Na KIM, Keun Woo KIM, Tae Wook KANG, Do Kyeong LEE, Yong Su LEE, Jae Hwan CHU, Kwang Hyun KIM, Yeoung Keol WOO, Yung Bin CHUNG
  • Publication number: 20210050536
    Abstract: A method of manufacturing a display device includes providing an inorganic layer on a carrier substrate, providing a first flexible substrate on the inorganic layer, providing a first shielding layer including a metal on the first flexible substrate, providing a first barrier layer on the first shielding layer, and providing a thin film transistor layer on the first barrier layer. The inorganic layer includes at least one material selected from silicon nitride (SiNx), silicon oxide (SiOx), and silicon oxynitride (SiOxNy), and a thickness of the inorganic layer is in a range from about 10 ? to about 6000 ?.
    Type: Application
    Filed: June 19, 2020
    Publication date: February 18, 2021
    Inventors: Yeoung Keol WOO, Yung Bin CHUNG, Chul Min BAE, Ji Hye HAN, Eun Jin KWAK
  • Publication number: 20200310499
    Abstract: A display device is provided including a substrate including a first organic layer and a first barrier layer. A shield layer is disposed between the first organic layer and the first barrier layer, and the shield layer includes a metal.
    Type: Application
    Filed: January 22, 2020
    Publication date: October 1, 2020
    Inventors: Yung Bin Chung, Yeoung Keol Woo, Seung Wook Kwon
  • Patent number: 10672911
    Abstract: A thin film transistor array panel device comprises: a base substrate; a barrier layer disposed over the base substrate and comprising a plurality of transparent material layers; and an array of thin film transistors disposed over the barrier layer. A difference between a refractive index of the barrier layer and a refractive index of the base substrate may be within about 6%. The transparent material layers may be arranged such that the transparent material layers having compressive residual stress and the transparent material layers having tensile residual stress are alternately stacked. Each of the transparent material layers may comprise silicon oxynitride (SiON).
    Type: Grant
    Filed: June 25, 2019
    Date of Patent: June 2, 2020
    Assignee: SAMSUNG DISPLAY CO., LTD.
    Inventors: Seung Ho Jung, Chaun Gi Choi, Hye Young Park, Eun Young Lee, Joo Hee Jeon, Eun Jeong Cho, Bo Geon Jeon, Yung Bin Chung
  • Publication number: 20200111854
    Abstract: A display apparatus includes a base substrate, an active pattern disposed on the base substrate, a gate insulation layer disposed on the active pattern, a gate electrode disposed on the gate insulation layer and overlapping the active pattern, a first insulation layer disposed on the gate electrode and having a total amount of hydrogen of about 5 atomic percent (at. %) to about 30 at. %, and a source electrode and a drain electrode which are disposed on the first insulation layer and are electrically connected to the active pattern.
    Type: Application
    Filed: September 19, 2019
    Publication date: April 9, 2020
    Inventors: Yung Bin CHUNG, Yeoungkeol WOO, Kwanghyun KIM, Sangwoo SOHN, Dokeun SONG, Sangwook LEE, Heon Sik HA
  • Publication number: 20190326442
    Abstract: A thin film transistor array panel device comprises: a base substrate; a barrier layer disposed over the base substrate and comprising a plurality of transparent material layers; and an array of thin film transistors disposed over the barrier layer. A difference between a refractive index of the barrier layer and a refractive index of the base substrate may be within about 6%. The transparent material layers may be arranged such that the transparent material layers having compressive residual stress and the transparent material layers having tensile residual stress are alternately stacked. Each of the transparent material layers may comprise silicon oxynitride (SiON).
    Type: Application
    Filed: June 25, 2019
    Publication date: October 24, 2019
    Inventors: Seung Ho JUNG, Chaun Gi Choi, Hye Young Park, Eun Young Lee, Joo Hee Jeon, Eun Jeong Cho, Bo Geon Jeon, Yung Bin Chung
  • Patent number: 10361312
    Abstract: A thin film transistor array panel device comprises: a base substrate; a barrier layer disposed over the base substrate and comprising a plurality of transparent material layers; and an array of thin film transistors disposed over the barrier layer. A difference between a refractive index of the barrier layer and a refractive index of the base substrate may be within about 6%. The transparent material layers may be arranged such that the transparent material layers having compressive residual stress and the transparent material layers having tensile residual stress are alternately stacked. Each of the transparent material layers may comprise silicon oxynitride (SiON).
    Type: Grant
    Filed: April 5, 2017
    Date of Patent: July 23, 2019
    Assignee: SAMSUNG DISPLAY CO., LTD.
    Inventors: Seung Ho Jung, Chaun Gi Choi, Hye Young Park, Eun Young Lee, Joo Hee Jeon, Eun Jeong Cho, Bo Geon Jeon, Yung Bin Chung
  • Patent number: 10020352
    Abstract: A substrate structure may be used in a display device. The substrate structure may include a base substrate, a transistor, and a silicon oxynitride layer. The transistor may include a semiconductor member and a gate electrode and may overlap the base substrate. The silicon oxynitride layer may directly contact at least one of the base substrate, the semiconductor member, and the gate electrode and may include (and/or contain) a hydrogen atom set. A hydrogen concentration in the silicon oxynitride layer may be greater than or equal to 1.52 atomic percent.
    Type: Grant
    Filed: July 14, 2016
    Date of Patent: July 10, 2018
    Assignee: Samsung Display Co., Ltd.
    Inventors: Yung-Bin Chung, Bo-Geon Jeon, Eun-Jeong Cho, Hye-Hyang Park, Sung-Hoon Yang, Woo-Seok Jeon, Joo-Hee Jeon, Chaun-Gi Choi
  • Patent number: 9859305
    Abstract: Provided are liquid crystal display and the method for manufacturing the same. According to an aspect of the present invention, there is provided a liquid crystal display device, including a first substrate; a gate electrode disposed on the first substrate; a semiconductor pattern layer disposed on the gate electrode; and a source electrode and a drain electrode disposed on the semiconductor pattern layer and facing each other, wherein a diffusion prevention pattern is disposed on the semiconductor pattern layer to prevent diffusion into the semiconductor pattern layer or to maintain uniform thickness of the semiconductor pattern layer.
    Type: Grant
    Filed: April 15, 2016
    Date of Patent: January 2, 2018
    Assignee: Samsung Display Co., Ltd.
    Inventors: Yung Bin Chung, Bo Geon Jeon, Eun Jeong Cho, Tae Young Ahn, Woo Seok Jeon, Sung Hoon Yang
  • Publication number: 20170207343
    Abstract: A thin film transistor array panel device comprises: a base substrate; a barrier layer disposed over the base substrate and comprising a plurality of transparent material layers; and an array of thin film transistors disposed over the barrier layer. A difference between a refractive index of the barrier layer and a refractive index of the base substrate may be within about 6%. The transparent material layers may be arranged such that the transparent material layers having compressive residual stress and the transparent material layers having tensile residual stress are alternately stacked. Each of the transparent material layers may comprise silicon oxynitride (SiON).
    Type: Application
    Filed: April 5, 2017
    Publication date: July 20, 2017
    Inventors: Seung Ho JUNG, Chaun Gi CHOI, Hye Young PARK, Eun Young LEE, Joo Hee JEON, Eun Jeong CHO, Bo Geon JEON, Yung Bin CHUNG
  • Patent number: 9647237
    Abstract: A thin film transistor array panel device comprises: a base substrate; a barrier layer disposed over the base substrate and comprising a plurality of transparent material layers; and an array of thin film transistors disposed over the barrier layer. A difference between a refractive index of the barrier layer and a refractive index of the base substrate may be within about 6%. The transparent material layers may be arranged such that the transparent material layers having compressive residual stress and the transparent material layers having tensile residual stress are alternately stacked. Each of the transparent material layers may comprise silicon oxynitride (SiON).
    Type: Grant
    Filed: February 17, 2016
    Date of Patent: May 9, 2017
    Assignee: Samsung Display Co., Ltd.
    Inventors: Seung Ho Jung, Chaun Gi Choi, Hye Young Park, Eun Young Lee, Joo Hee Jeon, Eun Jeong Cho, Bo Geon Jeon, Yung Bin Chung
  • Publication number: 20170110481
    Abstract: Provided are liquid crystal display and the method for manufacturing the same. According to an aspect of the present invention, there is provided a liquid crystal display device, including a first substrate; a gate electrode disposed on the first substrate; a semiconductor pattern layer disposed on the gate electrode; and a source electrode and a drain electrode disposed on the semiconductor pattern layer and facing each other, wherein a diffusion prevention pattern is disposed on the semiconductor pattern layer to prevent diffusion into the semiconductor pattern layer or to maintain uniform thickness of the semiconductor pattern layer.
    Type: Application
    Filed: April 15, 2016
    Publication date: April 20, 2017
    Inventors: Yung Bin CHUNG, Bo Geon JEON, Eun Jeong CHO, Tae Young AHN, Woo Seok JEON, Sung Hoon YANG
  • Publication number: 20170104048
    Abstract: A substrate structure may be used in a display device. The substrate structure may include a base substrate, a transistor, and a silicon oxynitride layer. The transistor may include a semiconductor member and a gate electrode and may overlap the base substrate. The silicon oxynitride layer may directly contact at least one of the base substrate, the semiconductor member, and the gate electrode and may include (and/or contain) a hydrogen atom set. A hydrogen concentration in the silicon oxynitride layer may be greater than or equal to 1.52 atomic percent.
    Type: Application
    Filed: July 14, 2016
    Publication date: April 13, 2017
    Inventors: Yung-Bin CHUNG, Bo-Geon JEON, Eun-Jeong CHO, Hye-Hyang PARK, Sung-Hoon YANG, Woo-Seok JEON, Joo-Hee JEON, Chaun-Gi CHOI
  • Patent number: 9536908
    Abstract: A thin-film transistor array panel includes an insulation substrate, a gate line disposed on the insulation substrate, a gate insulating layer disposed on the gate line, a semiconductor layer disposed on the gate insulating layer, a data line disposed on the semiconductor layer and including a source electrode, a drain electrode disposed on the semiconductor layer and facing the source electrode, a first electrode disposed on the gate insulating layer, a first passivation layer disposed on the first electrode and including silicon nitride, a second passivation layer disposed on the first passivation and including silicon nitride, and a second electrode disposed on the passivation layer, in which a first ratio of nitrogen-hydrogen bonds to silicon-hydrogen bonds in the first passivation layer is different from a second ratio of nitrogen-hydrogen bonds to silicon-hydrogen bonds in the second passivation layer.
    Type: Grant
    Filed: July 15, 2015
    Date of Patent: January 3, 2017
    Assignee: Samsung Display Co., Ltd.
    Inventors: Yung Bin Chung, Chul-Hyun Baek, Eun Jeong Cho, Jung Yun Jo
  • Publication number: 20160322602
    Abstract: A thin film transistor array panel device comprises: a base substrate; a barrier layer disposed over the base substrate and comprising a plurality of transparent material layers; and an array of thin film transistors disposed over the barrier layer. A difference between a refractive index of the barrier layer and a refractive index of the base substrate may be within about 6%. The transparent material layers may be arranged such that the transparent material layers having compressive residual stress and the transparent material layers having tensile residual stress are alternately stacked. Each of the transparent material layers may comprise silicon oxynitride (SiON).
    Type: Application
    Filed: February 17, 2016
    Publication date: November 3, 2016
    Inventors: Seung Ho JUNG, Chaun Gi CHOI, Hye Young PARK, Eun Young LEE, Joo Hee JEON, Eun Jeong CHO, Bo Geon JEON, Yung Bin CHUNG
  • Patent number: 9406704
    Abstract: A thin-film transistor array panel includes an insulation substrate, a gate line disposed on the insulation substrate, a gate insulating layer disposed on the gate line, a semiconductor layer disposed on the gate insulating layer, a data line disposed on the semiconductor layer and including a source electrode, a drain electrode disposed on the semiconductor layer and facing the source electrode, a first electrode disposed on the gate insulating layer, a first passivation layer disposed on the first electrode and including silicon nitride, a second passivation layer disposed on the first passivation and including silicon nitride, and a second electrode disposed on the passivation layer, in which a first ratio of nitrogen-hydrogen bonds to silicon-hydrogen bonds in the first passivation layer is different from a second ratio of nitrogen-hydrogen bonds to silicon-hydrogen bonds in the second passivation layer.
    Type: Grant
    Filed: July 15, 2015
    Date of Patent: August 2, 2016
    Assignee: Samsung Display Co., Ltd.
    Inventors: Yung Bin Chung, Chul-Hyun Baek, Eun Jeong Cho, Jung Yun Jo
  • Publication number: 20160204125
    Abstract: A thin-film transistor array panel includes an insulation substrate, a gate line disposed on the insulation substrate, a gate insulating layer disposed on the gate line, a semiconductor layer disposed on the gate insulating layer, a data line disposed on the semiconductor layer and including a source electrode, a drain electrode disposed on the semiconductor layer and facing the source electrode, a first electrode disposed on the gate insulating layer, a first passivation layer disposed on the first electrode and including silicon nitride, a second passivation layer disposed on the first passivation and including silicon nitride, and a second electrode disposed on the passivation layer, in which a first ratio of nitrogen-hydrogen bonds to silicon-hydrogen bonds in the first passivation layer is different from a second ratio of nitrogen-hydrogen bonds to silicon-hydrogen bonds in the second passivation layer.
    Type: Application
    Filed: July 15, 2015
    Publication date: July 14, 2016
    Inventors: Yung Bin CHUNG, Chul-Hyun BAEK, Eun Jeong CHO, Jung Yun JO
  • Publication number: 20150053135
    Abstract: A strap for a plasma processing apparatus includes a main body, and a protrusion pattern defined in the main body. The main body may include a binding part defined at opposing ends thereof. The protrusion pattern may include a protrusion.
    Type: Application
    Filed: February 24, 2014
    Publication date: February 26, 2015
    Applicant: Samsung Display Co., Ltd.
    Inventors: Yung-Bin CHUNG, Jun-Hyuck JEON, Yeon-Taek JUNG, Seok-Bae KO, Myoung-Jae KIM, Jin-Hyuck SONG, Eun-A YU, Seung-Kyeng CHO, Ji-Hyun HAM
  • Publication number: 20100183818
    Abstract: Provided are an apparatus and a method of depositing films capable of controlling deposition rate and film properties using the charging behavior of nanoparticles formed in gas phase. The apparatus includes a chamber in which a substrate is loaded, a gas supply system configured to introduce a reaction gas into the chamber, a filament configured to emit heat for dissociating the introduced reaction gas, a power supply configured to apply a constant alternate current or direct current voltage, and a bias supply unit configured to apply a bias to at least one of a top, a side and a bottom of the substrate using a voltage applied from the power supply while a film is deposited on the substrate from the dissociated reaction gas, the bias supply unit being separated from the substrate.
    Type: Application
    Filed: September 6, 2007
    Publication date: July 22, 2010
    Inventors: Nong-Moon Hwang, Chan-Soo Kim, Jae-Ik Lee, Yung-Bin Chung, Woong-Kyu Youn
  • Publication number: 20100136767
    Abstract: A method for manufacturing a thin film is provided. A substrate is loaded into a chamber. A first reaction gas and a second reaction gas are supplied into the chamber. The first reaction gas is dissociated to form crystalline nanoparticles. An amorphous material is inhibited from being formed on the substrate using the second reaction gas. Thereafter, a crystalline thin film is formed from the crystalline nanoparticles provided on the substrate.
    Type: Application
    Filed: August 19, 2008
    Publication date: June 3, 2010
    Applicant: SNU R&DB FOUNDATION
    Inventors: Nong Moon Hwang, Yung Bin Chung, Dong Kwon Lee