Abstract: An integrated circuit is provided and includes first transistors of a first circuit arranged in a first cell row having a first number of fin structures and a second transistor of a second circuit. The second transistor is coupled in parallel with a first element in the first transistors between first and second terminals of the first circuit, and arranged in a second cell row having a second number, different from the first number, of fin structures. The first element and the second transistor share a first gate extending in a first direction to pass through the first and second cell rows in a layout view. The second transistor is a duplication of the first element.

Abstract: A semiconductor device includes several first cell row an several second cell rows. The first cell rows extend in a first direction. Each of the first cell rows has a first row height. A first row of the first cell rows is configured for a first cell to be arranged. The second cell rows extend in the first direction. Each of the second cell rows has a second row height that is different from the first row height. At least one row of the second cell rows includes a portion for at least one second cell to be arranged. The portion has a third row height that is different from the first row height and the second row height.

Abstract: An integrated circuit includes a first diffusion area for a first type transistor. The first type transistor includes a first drain region and a first source region. A second diffusion area for a second type transistor is separated from the first diffusion area. The second type transistor includes a second drain region and a second source region. A gate electrode continuously extends across the first diffusion area and the second diffusion area in a routing direction. A first metallic structure is electrically coupled with the first source region. A second metallic structure is electrically coupled with the second drain region. A third metallic structure is disposed over and electrically coupled with the first and second metallic structures. A width of the first metallic structure is substantially equal to or larger than a width of the third metallic structure.

Abstract: A semiconductor device includes several first cell row an several second cell rows. The first cell rows extend in a first direction. Each of the first cell rows has a first row height. A first row of the first cell rows is configured for a first cell to be arranged. The second cell rows extend in the first direction. Each of the second cell rows has a second row height that is different from the first row height. At least one row of the second cell rows includes a portion for at least one second cell to be arranged. The portion has a third row height that is different from the first row height and the second row height.

Abstract: An elastomer is provided, which is a product of reacting C4-12 lactam, poly(C2-4 alkylene glycol), C4-12 diacid, and multi-ester aliphatic monomer. The C4-12 lactam and the poly(C2-4 alkylene glycol) have a weight ratio of 20:80 to 80:20. The total weight of the C4-12 lactam and the poly(C2-4 alkylene glycol) and the weight of the C4-12 diacid have a ratio of 100:0.5 to 100:10. The total weight of the C4-12 lactam and the poly(C2-4 alkylene glycol) and the weight of the multi-ester aliphatic monomer have a ratio of 100:0.01 to 100:5.

Abstract: A polyurethane urea composition and a preparation method thereof are provided. The method includes mixing and reacting an urea and an amine compound to obtain a polyurea oligomer, and mixing and reacting the polyurea oligomer and a cyclic carbonate compound to obtain a polyurethane urea composition having a repeating unit represented by formula I: —R2—U2—U1—U2—R2—, wherein ??[formula I] U1 is a is an integer of 1 to 10000, each U2 is independently each R1 is independently a C1 to C20 alkylene group, a C3 to C20 cycloalkylene group, a C8 to C20 alkylarylene group, a polyether group having a weight-average molecular weight of 100 g/mol to 10000 g/mol, or a combination thereof, and each R2 is independently an aliphatic group, a cycloaliphatic group, an aromatic group substituted by an alkyl or an unsubstituted aromatic group, an oligo polyether group, an oligo polyester group, or a combination thereof.

Abstract: An elastomer is provided, which is a product of reacting C4-12 lactam, poly(C2-4 alkylene glycol), C4-12 diacid, and multi-ester aliphatic monomer. The C4-12 lactam and the poly(C2-4 alkylene glycol) have a weight ratio of 20:80 to 80:20. The total weight of the C4-12 lactam and the poly(C2-4 alkylene glycol) and the weight of the C4-12 diacid have a ratio of 100:0.5 to 100:10. The total weight of the C4-12 lactam and the poly(C2-4 alkylene glycol) and the weight of the multi-ester aliphatic monomer have a ratio of 100:0.01 to 100:5.

Abstract: An elastomer is provided, which is a product of reacting C4-12 lactam, poly(C2-4 alkylene glycol), C4-12 diacid, and multi-ester aliphatic monomer. The C4-12 lactam and the poly(C2-4 alkylene glycol) have a weight ratio of 20:80 to 80:20. The total weight of the C4-12 lactam and the poly(C2-4 alkylene glycol) and the weight of the C4-12 diacid have a ratio of 100:0.5 to 100:10. The total weight of the C4-12 lactam and the poly(C2-4 alkylene glycol) and the weight of the multi-ester aliphatic monomer have a ratio of 100:0.01 to 100:5.

Abstract: A polyurethane urea composition and a preparation method thereof are provided. The method includes mixing and reacting an urea and an amine compound to obtain a polyurea oligomer, and mixing and reacting the polyurea oligomer and a cyclic carbonate compound to obtain a polyurethane urea composition having a repeating unit represented by formula I: —R2—U2—U1—U2—R2, wherein ??[formula I] U1 is a is an integer of 1 to 10000, each U2 is independently each R1 is independently a C1 to C20 alkyl group, a C3 to C20 cycloalkyl group, a C8 to C20 alkylaryl group, a polyether group having a weight-average molecular weight of 100 g/mol to 10000 g/mol, or a combination thereof, and each R2 is independently an aliphatic group, a cycloaliphatic group, an aromatic group substituted by an alkyl or an unsubstituted aromatic group, an oligo polyether group, an oligo polyester group, or a combination thereof.

Abstract: An elastomer is provided, which is a product of reacting C4-12 lactam, poly(C2-4 alkylene glycol), C4-12 diacid, and multi-ester aliphatic monomer. The C4-12 lactam and the poly(C2-4 alkylene glycol) have a weight ratio of 20:80 to 80:20. The total weight of the C4-12 lactam and the poly(C2-4 alkylene glycol) and the weight of the C4-12 diacid have a ratio of 100:0.5 to 100:10. The total weight of the C4-12 lactam and the poly(C2-4 alkylene glycol) and the weight of the multi-ester aliphatic monomer have a ratio of 100:0.01 to 100:5.

Abstract: Disclosed is a flame retardant agent, including a nitrogen-based lignin formed by reacting 1 part by weight of lignin, 0.8 to 2.4 parts by weight of a nitrogen-containing compound, and 0.3 to 0.9 parts by weight of an aldehyde under an alkaline condition. The flame retardant agent can be added to thermoplastic or thermosetting resins to form flame retardant materials.

Abstract: Disclosed is a flame retardant agent, including a nitrogen-based lignin formed by reacting 1 part by weight of lignin, 0.8 to 2.4 parts by weight of a nitrogen-containing compound, and 0.3 to 0.9 parts by weight of an aldehyde under an alkaline condition. The flame retardant agent can be added to thermoplastic or thermosetting resins to form flame retardant materials.

Abstract: Disclosed is an adhesive composition including 100 parts by weight of lignin, 150 to 400 parts by weight of epoxy resin, and 7.5 to 200 parts by weight of flexibilizer. The lignin and the flexibilizer can be pre-reacted to enhance the physical properties, e.g. glass transition temperature (Tg) and flexural endurance (MIT), of the cured adhesive composition. Furthermore, the adhesive composition and a flexible metal foil can be laminated to form a flexible substrate.

Abstract: A method for fabricating a high specific surface area mesoporous alumina is disclosed, which includes the following steps: (a) providing a water solution containing an aluminum salt and a fluoro-surfactant; (b) adding concentrated hydrochloric acid to adjust the PH value of the solution to about 6.0 to 8.0; (c) aging the solution at 70° C. to 110° C. for 12 to 20 hours; (d) washing the precipitate with water; (e) washing the precipitate with an organic solvent; (f) drying the precipitate; and (g) sintering the precipitate in a furnace of 500° C. to 1000° C.

Abstract: A method for fabricating a high specific surface area mesoporous alumina is disclosed, which includes the following steps: (a) providing a water solution containing an aluminum salt and a fluoro-surfactant; (b) adding concentrated hydrochloric acid to adjust the PH value of the solution to about 6.0 to 8.0; (c) aging the solution at 70° C. to 110° C. for 12 to 20 hours; (d) washing the precipitate with water; (e) washing the precipitate with an organic solvent; (f) drying the precipitate; and (g) sintering the precipitate in a furnace of 500° C. to 1000° C.

Abstract: A method for fabricating a high specific surface area mesoporous alumina is disclosed, which includes the following steps: (a) providing a water solution containing an aluminum salt and a fluoro-surfactant; (b) adding concentrated hydrochloric acid to adjust the PH value of the solution to about 6.0 to 8.0; (c) aging the solution at 70° C. to 110° C. for 12 to 20 hours; (d) washing the precipitate with water; (e) washing the precipitate with an organic solvent; (f) drying the precipitate; and (g) sintering the precipitate in a furnace of 500° C. to 1000° C.

Abstract: A method for fabricating a high specific surface area mesoporous alumina is disclosed, which includes the following steps: (a) providing a water solution containing an aluminum salt and a fluoro-surfactant; (b) adding concentrated hydrochloric acid to adjust the PH value of the solution to about 6.0 to 8.0; (c) aging the solution at 70° C. to 110° C. for 12 to 20 hours; (d) washing the precipitate with water; (e) washing the precipitate with an organic solvent; (f) drying the precipitate; and (g) sintering the precipitate in a furnace of 500° C. to 1000° C.