Abstract: A method for manufacturing a semiconductor device includes forming a first dielectric layer over a semiconductor fin. The method includes forming a second dielectric layer over the first dielectric layer. The method includes exposing a portion of the first dielectric layer. The method includes oxidizing a surface of the second dielectric layer while limiting oxidation on the exposed portion of the first dielectric layer.

Abstract: Exemplary methods of semiconductor processing may include forming a layer of silicon-containing material on a semiconductor substrate. The methods may include performing a post-formation treatment on the layer of silicon-containing material to yield a treated layer of silicon-containing material. The methods may include contacting the treated layer of silicon-containing material with an adhesion agent. The methods may include forming a layer of a resist material on the treated layer of silicon-containing material.

Abstract: A method of forming features over a semiconductor substrate is provided. The method includes supplying a gas mixture over a surface of a substrate at a continuous flow rate. A first radio frequency (RF) signal is delivered to an electrode while the gas mixture is supplied at the continuous flow rate to deposit a polymer layer over the surface of the substrate. The surface of the substrate includes an oxide containing portion and a nitride containing portion. A second RF signal is delivered to the electrode while continuously supplying the gas mixture at the continuous flow rate to selectively etch the oxide containing portion relative to the nitride containing portion.

Abstract: Embodiments of the present disclosure generally relate to methods for enhancing photoresist (PR) to have improved profile control. A method for treating a PR includes positioning a workpiece within a process region of a processing chamber, where the workpiece contains a patterned PR disposed on an underlayer, and treating the patterned PR by exposing the workpiece to a sequential infiltration synthesis (SIS) process to produce a treated patterned PR which is denser and harder than the patterned PR. The SIS process includes one or more infiltration cycles of exposing the patterned PR to a precursor containing silicon or boron, infiltrating the patterned PR with the precursor, purging to remove remnants of the precursor, exposing the patterned PR to an oxidizing agent, infiltrating the patterned PR with the oxidizing agent to produce oxide coating disposed on inner surfaces of the patterned PR, and purging to remove remnants of the oxidizing agent.

Abstract: The present disclosure provides forming nanostructures utilizing multiple patterning process with good profile control and feature transfer integrity. In one embodiment, a method for forming features on a substrate includes forming a first mandrel layer on a material layer disposed on a substrate. A first spacer layer is conformally formed on sidewalls of the first mandrel layer, wherein the first spacer layer comprises a doped silicon material. The first mandrel layer is selectively removed while keeping the first spacer layer. A second spacer layer is conformally formed on sidewalls of the first spacer layer and selectively removing the first spacer layer while keeping the second spacer layer.

Abstract: Methods for formation of a layer stack during a back-end-of-line (BEOL) process flow and the layer stack formed therefrom are provided. In one or more embodiments, the method utilizes a two-dimensional (2D) self-aligned scheme with a subtractive metal etch. The method includes using a hard mask to form a via with a small width which is formed through or contacts each of a first metal layer and a second metal layer. The via is filled with a metal gapfill to connect the first metal layer and the second metal layer. Each of the first metal layer and the second metal layer are patterned to form a plurality of features.

Abstract: The present disclosure provides forming nanostructures utilizing multiple patterning process with good profile control and feature transfer integrity. In one embodiment, a method for forming features on a substrate includes forming a first mandrel layer on a material layer disposed on a substrate. A first spacer layer is conformally formed on sidewalls of the first mandrel layer, wherein the first spacer layer comprises a doped silicon material. The first mandrel layer is selectively removed while keeping the first spacer layer. A second spacer layer is conformally formed on sidewalls of the first spacer layer and selectively removing the first spacer layer while keeping the second spacer layer.

Abstract: Embodiments of the present disclosure generally relate to methods for etching materials. In one or more embodiments, the method includes positioning a substrate in a process volume of a process chamber, where the substrate includes a metallic ruthenium layer disposed thereon, and exposing the metallic ruthenium layer to an oxygen plasma to produce a solid ruthenium oxide on the metallic ruthenium layer and a gaseous ruthenium oxide within the process volume. The method also includes exposing the solid ruthenium oxide to a secondary plasma to convert the solid ruthenium oxide to either metallic ruthenium or a ruthenium oxychloride compound. The metallic ruthenium is in a solid state on the metallic ruthenium layer or the ruthenium oxychloride compound is in a gaseous state within the process volume.

Abstract: Methods of forming and processing semiconductor devices which utilize the selective etching of aluminum oxide over silicon oxide, silicon nitride, aluminum oxide or zirconium oxide are described. Certain embodiments relate to the formation of self-aligned contacts for metal gate applications.

Abstract: The disclosure provides an eye tracking method, an head-mounted display (HMD), and a computer readable storage medium. The method includes: capturing, by the first camera, a first eye image of a first eye of a wearer of the HMD; capturing, by the second camera, a second eye image of the first eye of the wearer; constructing a first eye model of the first eye based on the first eye image and the second eye image; capturing, by the first camera, a first specific eye image of the first eye of the wearer; obtaining a plurality of first specific eye landmarks in the first specific eye image; identifying a first eye pose of the first eye of the wearer based on the first eye model and the first specific eye landmarks.

Abstract: Methods for depositing boron-containing films on a substrate are described. The substrate is exposed to a boron precursor and a plasma to form the boron-containing film (e.g., elemental boron, boron oxide, boron carbide, boron silicide, boron nitride). The exposures can be sequential or simultaneous. The boron-containing films are selectively deposited on one material (e.g., SiN or Si) rather than on another material (e.g., silicon oxide).

Abstract: A method and apparatus for patterning semiconductor materials using tin-based materials as mandrels, hardmasks, and liner materials are provided. One or more implementations of the present disclosure use tin-oxide and/or tin-carbide materials as hardmask materials, mandrel materials, and/or liner material during various patterning applications. Tin-oxide or tin-carbide materials are easy to strip relative to other high selectivity materials like metal oxides (e.g., TiO2, ZrO2, HfO2, Al2O3) to avoid influencing critical dimensions and generate defects. In addition, tin-oxide and tin-carbide have low refractive index, k-value, and are transparent under 663-nm for lithography overlay.

Abstract: The disclosure provides a head-mounted display (HMD) including a chamber a light emitter, a camera, and a processor. The chamber has a lens and a display, wherein the lens is coated with a reflective layer and faces a target eye of a wearer, and the reflective layer has at least one specific location. The light emitter emits a first light to the reflective layer, wherein for an i-th specific location, the first light is scattered as multiple second lights by the i-th specific location, the second lights are scattered as multiple third lights by the target eye, and the third lights are scattered as multiple fourth lights by multiple reference locations on the reflective layer. The camera captures the fourth lights as an image corresponding to the i-th specific location. The processor estimates an eye pose of the target eye based on the image corresponding to each specific location.

Abstract: The present disclosure provides forming nanostructures utilizing multiple patterning process with good profile control and feature transfer integrity. In one embodiment, a method for forming features on a substrate includes forming a mandrel layer on a substrate, conformally forming a spacer layer on the mandrel layer, wherein the spacer layer is a doped silicon material, and patterning the spacer layer. In another embodiment, a method for forming features on a substrate includes conformally forming a spacer layer on a mandrel layer on a substrate, wherein the spacer layer is a doped silicon material, selectively removing a portion of the spacer layer using a first gas mixture, and selectively removing the mandrel layer using a second gas mixture different from the first gas mixture.

Abstract: Methods of forming and processing semiconductor devices which utilize the selective etching of aluminum oxide over silicon oxide, silicon nitride, aluminum oxide or zirconium oxide are described. Certain embodiments relate to the formation of self-aligned contacts for metal gate applications.

Abstract: Methods of forming and processing semiconductor devices which utilize the selective etching of aluminum oxide over silicon oxide, silicon nitride, aluminum oxide or zirconium oxide are described. Certain embodiments relate to the formation of self-aligned contacts for metal gate applications.

Abstract: A driving method suitable for a head mounted device (HMD) is provided. The driving method includes the following operations: moving a first image capture unit and a second image capture unit of the HMD to respectively capture two left-eye images and two right-eye images; calculating a first eye relief according to at least one left-eye feature in the two left-eye images; calculating a second eye relief according to at least one right-eye feature in the two right-eye images; calculating an interpupillary distance (IPD) according to the first eye relief and the second eye relief; and adjusting, according to the IPD, a distance between a first lens and a second lens of the HMD.

Abstract: An eye tracking method includes: constructing, by a processing circuit, an eye model; analyzing, by the processing circuit, a first head center position, according to a plurality of first pupil shape information and the eye model, wherein the plurality of first pupil shape information correspond to a plurality of first gazing vectors; capturing, by a camera circuit, a first image of the eye; analyzing, by the processing circuit, a determined gazing vector, according to the eye model and the first image; and adjusting, by the processing circuit, the first head center position according to an actual pupil shape information group and a plurality of simulated pupil shape information groups.

Abstract: The disclosure provides a head-mounted display (HMD) including a chamber a light emitter, a camera, and a processor. The chamber has a lens and a display, wherein the lens is coated with a reflective layer and faces a target eye of a wearer, and the reflective layer has at least one specific location. The light emitter emits a first light to the reflective layer, wherein for an i-th specific location, the first light is scattered as multiple second lights by the i-th specific location, the second lights are scattered as multiple third lights by the target eye, and the third lights are scattered as multiple fourth lights by multiple reference locations on the reflective layer. The camera captures the fourth lights as an image corresponding to the i-th specific location. The processor estimates an eye pose of the target eye based on the image corresponding to each specific location.

Abstract: The disclosure provides an eye tracking method, an head-mounted display (HMD), and a computer readable storage medium. The method includes: capturing, by the first camera, a first eye image of a first eye of a wearer of the HMD; capturing, by the second camera, a second eye image of the first eye of the wearer; constructing a first eye model of the first eye based on the first eye image and the second eye image; capturing, by the first camera, a first specific eye image of the first eye of the wearer; obtaining a plurality of first specific eye landmarks in the first specific eye image; identifying a first eye pose of the first eye of the wearer based on the first eye model and the first specific eye landmarks.