Patents by Inventor Yung-Chen Lin

Yung-Chen Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10741393
    Abstract: Embodiments described herein relate to substrate processing methods. The methods include forming a patterned hardmask material on a substrate, forming first mandrel structures on exposed regions of the substrate, and depositing a gap fill material on the substrate over the hardmask material and the first mandrel structures. The first mandrel structures are removed to expose second regions of the substrate and form second mandrel structures comprising the hardmask material and the gap fill material. Fin structures are deposited on the substrate using the second mandrel structures as a mask.
    Type: Grant
    Filed: January 28, 2019
    Date of Patent: August 11, 2020
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Yung-chen Lin, Qingjun Zhou, Xinyu Bao, Ying Zhang
  • Patent number: 10692728
    Abstract: Methods of forming and processing semiconductor devices which utilize the selective etching of aluminum oxide over silicon oxide and/or silicon nitride are described. Certain embodiments relate to the formation of fin-etched substrates. Other embodiments relate to the removal of source drain caps from substrates. Further embodiments relate to the processing of substrates comprising vias and/or metal contacts with bottom etch stop layers and/or liner layers.
    Type: Grant
    Filed: September 27, 2018
    Date of Patent: June 23, 2020
    Assignee: MICROMATERIALS LLC
    Inventors: Qingjun Zhou, Ying Zhang, Yung-Chen Lin
  • Patent number: 10658912
    Abstract: A shock wave generating unit includes a housing and a disk in the housing. The disk includes a vibration plate, which corresponds to a shock wave transmission member covering a first opening of the housing and includes an insulating thin elastic plate and a thin metal plate. The insulating thin elastic plate, with one side corresponding to the shock wave transmission member and the opposite side provided with the thin metal plate, has a hollow portion for partially exposing the thin metal plate and forms an accommodating cavity together with the exposed portion of the thin metal plate and the shock wave transmission member. A shock wave transmission medium can circulate through the accommodating cavity via a channel in the housing and is in contact with the exposed portion of the thin metal plate to facilitate dissipation of the heat generated by the disk during operation.
    Type: Grant
    Filed: March 31, 2017
    Date of Patent: May 19, 2020
    Assignee: Lite-Med Inc.
    Inventors: Chia-Chi Lin, Yung-Chen Su, Po-Hsiang Kuo
  • Patent number: 10593594
    Abstract: Methods of forming a self-aligned via comprising recessing a first metallization layer comprising a set of first conductive lines that extend along a first direction on a first insulating layer on a substrate. A second insulating layer is formed on the first insulating layer. A via is formed through the second insulating layer to one of the first conductive lines. Semiconductor devices comprising the self-aligned via and apparatus for forming the self-aligned via are also disclosed.
    Type: Grant
    Filed: December 11, 2018
    Date of Patent: March 17, 2020
    Assignee: Micromaterials LLC
    Inventors: Yung-Chen Lin, Qingjun Zhou, Ying Zhang, Ho-yung David Hwang, Uday Mitra, Regina Freed
  • Patent number: 10572009
    Abstract: An eye tracking method includes: capturing, by a camera, an image of an eye; detecting, by a processing circuit, a pupil region of interest in the image of the eye; analyzing, by the processing circuit, the pupil region of interest to obtain a gaze vector of the pupil region of interest; calculating, by the processing circuit, a viewpoint of the eye according to the gaze vector based on an eye model, in which the eye model includes a matrix indicating relationship between the viewpoint of the eye and the gaze vector of the pupil region of interest; and tracking, by the processing circuit, a motion of the eye based on the viewpoint calculated using the eye model.
    Type: Grant
    Filed: May 22, 2018
    Date of Patent: February 25, 2020
    Assignee: HTC Corporation
    Inventor: Yung-Chen Lin
  • Die
    Patent number: 10510677
    Abstract: A semiconductor structure includes a wafer comprising a plurality of viewing fields defined thereon, a plurality of dies defined by a scribe line formed in each viewing field, a plurality of mark patterns formed in the scribe line, and a plurality of anchor pattern respectively formed in the review fields, the anchor patterns being different from the mark patterns.
    Type: Grant
    Filed: August 21, 2018
    Date of Patent: December 17, 2019
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Yung-Teng Tsai, Hung-Chin Lin, Chia-Chen Sun, Chih-Yu Wu, Jun-Ming Chen, Chung-Chih Hung, Sheng-Chieh Chen
  • Patent number: 10510540
    Abstract: Methods of forming semiconductor devices comprising etching a hardmask and spin-on-carbon layer through an opening in a photoresist to expose a gapfill material. The photoresist, spin-on-carbon layer and gapfill material are removed. A new spin-on-carbon layer, hardmask and photoresist are formed with an opening over a spacer mandrel. The hardmask, spin-on-carbon layer are etched through the opening and the layers and spacer mandrel are removed. An etch stop layer and oxide layer are removed and a height of the spacer mandrel and gapfill material are reduced exposing portions of the substrate. The exposed portions of the substrate are fin etched and the layers removed.
    Type: Grant
    Filed: July 12, 2018
    Date of Patent: December 17, 2019
    Assignee: MICROMATERIALS LLC
    Inventors: Ying Zhang, Qingjun Zhou, Yung-Chen Lin, Ho-yung David Hwang
  • Patent number: 10510602
    Abstract: Methods and apparatus to form fully self-aligned vias are described. A first metal film is formed in the recessed first conductive lines and on the first insulating layer of a substrate comprising alternating conductive lines and a first insulating layer. Pillars and a sheet are formed from the first metal film. Some of the pillars and a portion of the sheet are selectively removed and a second insulating layer is deposited around the remaining pillars and sheet. The remaining pillars and sheet are removed to form vias and a trench in the second insulating layer. A third insulating layer is deposited in the vias and trench and an overburden is formed on the second insulating layer. Portions of the overburden are selectively etched from the second insulating layer to expose the second insulating layer and the filled vias and leaving portions of the third insulating layer on the second insulating layer.
    Type: Grant
    Filed: August 29, 2018
    Date of Patent: December 17, 2019
    Assignee: Mirocmaterials LLC
    Inventors: Ying Zhang, Abhijit Basu Mallick, Yung-Chen Lin, Qingjun Zhou, He Ren, Ho-yung David Hwang, Uday Mitra
  • Patent number: 10439047
    Abstract: Embodiments described herein relate to substrate processing methods. The methods include forming a patterned hardmask material on a substrate, forming first mandrel structures on exposed regions of the substrate, and depositing a gap fill material on the substrate over the hardmask material and the first mandrel structures. The first mandrel structures are removed to form second mandrel structures comprising the hardmask material and the gap fill material and the substrate is etched using the second mandrel structures as a mask to form fin structures.
    Type: Grant
    Filed: February 14, 2018
    Date of Patent: October 8, 2019
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Yung-Chen Lin, Qingjun Zhou, Ying Zhang
  • Publication number: 20190286229
    Abstract: An eye tracking method includes: constructing, by a processing circuit, an eye model; analyzing, by the processing circuit, a first head center position, according to a plurality of first pupil shape information and the eye model, wherein the plurality of first pupil shape information correspond to a plurality of first gazing vectors; capturing, by a camera circuit, a first image of the eye; analyzing, by the processing circuit, a determined gazing vector, according to the eye model and the first image; and adjusting, by the processing circuit, the first head center position according to an actual pupil shape information group and a plurality of simulated pupil shape information groups.
    Type: Application
    Filed: March 15, 2019
    Publication date: September 19, 2019
    Inventors: Wei-Chen CHEN, Yung-Chen LIN
  • Publication number: 20190279901
    Abstract: Methods of forming and processing semiconductor devices which utilize the selective etching of aluminum oxide over silicon oxide, silicon nitride, aluminum oxide or zirconium oxide are described. Certain embodiments relate to the formation of self-aligned contacts for metal gate applications.
    Type: Application
    Filed: March 12, 2019
    Publication date: September 12, 2019
    Inventors: Yung-Chen Lin, Qingjun Zhou, Ying Zhang, Ho-yung Hwang
  • Publication number: 20190252523
    Abstract: Embodiments described herein relate to substrate processing methods. The methods include forming a patterned hardmask material on a substrate, forming first mandrel structures on exposed regions of the substrate, and depositing a gap fill material on the substrate over the hardmask material and the first mandrel structures. The first mandrel structures are removed to form second mandrel structures comprising the hardmask material and the gap fill material and the substrate is etched using the second mandrel structures as a mask to form fin structures.
    Type: Application
    Filed: February 14, 2018
    Publication date: August 15, 2019
    Inventors: Yung-Chen LIN, Qingjun ZHOU, Ying ZHANG
  • Publication number: 20190252187
    Abstract: Embodiments described herein relate to substrate processing methods. The methods include forming a patterned hardmask material on a substrate, forming first mandrel structures on exposed regions of the substrate, and depositing a gap fill material on the substrate over the hardmask material and the first mandrel structures. The first mandrel structures are removed to expose second regions of the substrate and form second mandrel structures comprising the hardmask material and the gap fill material. Fin structures are deposited on the substrate using the second mandrel structures as a mask.
    Type: Application
    Filed: January 28, 2019
    Publication date: August 15, 2019
    Inventors: Yung-chen LIN, Qingjun ZHOU, Xinyu BAO, Ying ZHANG
  • Patent number: 10345595
    Abstract: A head mounted device include a displayer, an eye-tracking module and a control module. The eye-tracking module is configured for tracking positions and movements of two pupils. The control module is communicated with the displayer and the eye-tracking module. The control module is configured to determine a target object located in front of the head mounted device according to the positions of the pupils. The control module is further configured to obtain a gap distance between the pupils and the target object. The control module is further to calculate a dimensional parameter of the target object according the gap distance and the movements of the pupils. The control module is further to display the dimensional parameter on the displayer.
    Type: Grant
    Filed: September 14, 2017
    Date of Patent: July 9, 2019
    Assignee: HTC Corporation
    Inventors: Qing-Long Deng, Yung-Chen Lin
  • Publication number: 20190207127
    Abstract: Organic metal compounds and organic light-emitting devices employing the same are provided. The organic metal compound has a chemical structure of Formula (I) or Formula (II): wherein X is O or S; L is R12 is and, n is 0, 1, or 2.
    Type: Application
    Filed: July 5, 2018
    Publication date: July 4, 2019
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Jin-Sheng LIN, Pang-Chi HUANG, Yung-Chen CHENG, Ching-Hui CHOU, Jia-Lun LIOU, Meng-Hao CHANG, Mei-Rurng TSENG
  • Patent number: 10340466
    Abstract: Organic metal compounds, and organic light-emitting devices employing the same are provided. The organic metal compound has a chemical structure represented by Formula (I) or Formula (II): wherein, R1 is hydrogen, C1-12 alkyl, C1-12 alkoxy, amine, C2-6 alkenyl, C2-6 alkynyl, C5-10 cycloalkyl, C3-12 heteroaryl, or C6-12 aryl; R2, R3, R4, and R5 can be hydrogen, halogen, C1-12 alkyl, C1-12 alkoxy, C1-12 fluoroalkyl; R6 and R7 are independent and can be C1-6 alkyl, or phenyl; R8, R9, R10, R11, R12, R13, R14, and R15 can be hydrogen, halogen, C1-12 alkyl, C1-12 fluoroalkyl, or two adjacent groups of R2, R3, R4, R5, R8, R9, R10, R11, R12, R13, R14 and R15 are optionally combined with the carbon atoms which they are attached to, to form a cycloalkyl group, or aryl; m is 1 or 2; and, n is 0 or 1.
    Type: Grant
    Filed: November 25, 2016
    Date of Patent: July 2, 2019
    Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Jin-Sheng Lin, Yung-Chen Cheng, Jia-Lun Liou, Pang-Chi Huang, Cheng-An Wu, Meng-Hao Chang, Bing-Huang Jiang, Han-Cheng Yeh, Chun-Neng Ku, Mei-Rurng Tseng, Jung-Yu Liao, Jui-Chih Kao
  • Publication number: 20190189510
    Abstract: Methods of forming a self-aligned via comprising recessing a first metallization layer comprising a set of first conductive lines that extend along a first direction on a first insulating layer on a substrate. A second insulating layer is formed on the first insulating layer. A via is formed through the second insulating layer to one of the first conductive lines. Semiconductor devices comprising the self-aligned via and apparatus for forming the self-aligned via are also disclosed.
    Type: Application
    Filed: December 11, 2018
    Publication date: June 20, 2019
    Inventors: Yung-Chen Lin, Qingjun Zhou, Ying Zhang, Ho-yung David Hwang, Uday Mitra, Regina Freed
  • Publication number: 20190181246
    Abstract: Methods for forming semiconductor devices, such as FinFETs, are provided. In an embodiment, a fin structure processing method includes removing a portion of a first fin of a plurality of fins formed on a substrate to expose a surface of a remaining portion of the first fin, wherein the fins are adjacent to dielectric material structures formed on the substrate; performing a deposition operation to form features on the surface of the remaining portion of the first fin by depositing a Group III-V semiconductor material in a substrate processing environment; and performing an etching operation to etch the features with an etching gas to form a plurality of openings between adjacent dielectric material structures, wherein the etching operation is performed in the same chamber as the deposition operation.
    Type: Application
    Filed: February 15, 2019
    Publication date: June 13, 2019
    Inventors: Xinyu BAO, Ying ZHANG, Qingjun ZHOU, Yung-chen LIN
  • Patent number: 10297316
    Abstract: A memory device and associated control methods are provided. The memory device is electrically connected to M bit lines and N word lines. The memory device includes a memory array having memory cells and a controller. The memory cells are located at intersections of the M bit lines and the N word lines. A selected memory cell including a storage element and a selector switch is electrically connected to an m-th bit line and an n-th word line. The controller changes a cell cross voltage of the selected memory cell in the first duration, the second duration, and the post duration, respectively. The cell cross voltage in the first duration is greater than the cell cross voltage in the post duration, and the cell cross voltage in the post duration is greater than the cell cross voltage in the second duration.
    Type: Grant
    Filed: August 28, 2017
    Date of Patent: May 21, 2019
    Assignee: MACRONIX INTERNATIONAL CO., LTD.
    Inventors: Yung-Feng Lin, Yun-Chen Chou, Hsin-Yi Ho
  • Publication number: 20190096666
    Abstract: Methods of forming and processing semiconductor devices which utilize the selective etching of aluminum oxide over silicon oxide and/or silicon nitride are described. Certain embodiments relate to the formation of fin-etched substrates. Other embodiments relate to the removal of source drain caps from substrates. Further embodiments relate to the processing of substrates comprising vias and/or metal contacts with bottom etch stop layers and/or liner layers.
    Type: Application
    Filed: September 27, 2018
    Publication date: March 28, 2019
    Inventors: Qingjun Zhou, Ying Zhang, Yung-Chen Lin