Patents by Inventor Yung-Cheng Hsu

Yung-Cheng Hsu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of fabricating reticle
    Patent number: 11940737
    Abstract: A method includes receiving a device design layout and a scribe line design layout surrounding the device design layout. The device design layout and the scribe line design layout are rotated in different directions. An optical proximity correction (OPC) process is performed on the rotated device design layout and the rotated scribe line design layout. A reticle includes the device design layout and the scribe line design layout is formed after performing the OPC process.
    Type: Grant
    Filed: May 7, 2021
    Date of Patent: March 26, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Hsueh-Yi Chung, Yung-Cheng Chen, Fei-Gwo Tsai, Chi-Hung Liao, Shih-Chi Fu, Wei-Ti Hsu, Jui-Ping Chuang, Tzong-Sheng Chang, Kuei-Shun Chen, Meng-Wei Chen
  • SEMICONDUCTOR STRUCTURE WITH HYBRID FILM AND METHOD OF MANUFACTURING THE SAME
    Publication number: 20240071850
    Abstract: The present disclosure provides a semiconductor structure and a method of manufacturing a semiconductor structure. The semiconductor structure includes a substrate, semiconductor structures, an isolation layer, an adhesive layer, a metal layer, a metal nitride layer, a semiconductor layer, a profile modifier layer, and a disconnection structure. The semiconductor structures are disposed on the substrate. The isolation layer is disposed between the semiconductor structures. The metal layer is disposed on an adhesive layer. The metal nitride layer is disposed on the metal layer. The semiconductor layer is disposed on the metal nitride layer. The profile modifier layer is disposed on the semiconductor layer. The disconnection structure is disposed and extending from the profile modifier layer to the isolation layer. A first width of the disconnection structure in the profile modifier layer is substantially the same as a second width of the disconnection structure in the isolation layer.
    Type: Application
    Filed: August 29, 2022
    Publication date: February 29, 2024
    Inventors: FU-MING HSU, MING-JIE HUANG, ZHEN-CHENG WU, YUNG-CHENG LU
  • Plasma induced modification of silicon carbide surface
    Patent number: 11692267
    Abstract: Methods for modifying a susceptor having a silicon carbide (SiC) surface comprising exposing the silicon carbide surface (SiC) to an atmospheric plasma are described. The method increases the atomic oxygen content of the silicon carbide (SiC) surface.
    Type: Grant
    Filed: December 31, 2020
    Date of Patent: July 4, 2023
    Assignee: Applied Materials, Inc.
    Inventors: Francis Kanyiri Mungai, Vijayabhaskara Venkatagiriyappa, Yung-Cheng Hsu, Keiichi Tanaka, Mario D. Silvetti, Mihaela A. Balseanu
  • PLASMA INDUCED MODIFICATION OF SILICON CARBIDE SURFACE
    Publication number: 20220205095
    Abstract: Apparatus and methods for modifying a susceptor having a silicon carbide (SiC) surface. The method includes exposing the silicon carbide surface (SiC) to an atmospheric plasma. The method increases the atomic oxygen content of the silicon carbide (SiC) surface. The disclosure also describes a plasma treatment apparatus having a susceptor holding assembly and a plasma nozzle.
    Type: Application
    Filed: December 31, 2020
    Publication date: June 30, 2022
    Applicant: Applied Materials, Inc.
    Inventors: Francis Kanyiri Mungai, Vijayabhaskara Venkatagiriyappa, Yung-Cheng Hsu, Keiichi Tanaka, Mario D. Silvetti, Mihaela A. Balseanu