Abstract: Semiconductor dies of a semiconductor die package are directly bonded, and a top metal region may be formed over the semiconductor dies. A plurality of conductive terminals may be formed over the top metal region. The conductive terminals are formed of copper (Cu) or another material that enables low-temperature deposition process techniques, such as electroplating, to be used to form the conductive terminal. In this way, the conductive terminals of the semiconductor die packages described herein may be formed at a relatively low temperature. This reduces the likelihood of thermal deformation of semiconductor dies in the semiconductor die packages. The reduced thermal deformation reduces the likelihood of warpage, breakage, and/or other types of damage to the semiconductor dies of the semiconductor die packages, which may increase performance and/or increase yield of semiconductor die packages.

Abstract: A semiconductor structure and a method of fabricating therefor are disclosed. A second contact pad (500) is arranged lateral to a first contact pad (420) in an interconnect structure (400). As a result, during fabrication of the interconnect structure (400), the first contact pad (420) will not be present alone in a large bland area, due to the presence of the second contact pad (500). Thus, a pattern feature for the first contact pad (420) will not be over-resolved, increasing formation accuracy of the first contact pad (420) and thus guaranteeing good electrical transmission performance of the resulting interconnect structure (400).

Abstract: A system and methods of forming a dielectric material within a trench are described herein. In an embodiment of the method, the method includes introducing a first precursor into a trench of a dielectric layer, such that portions of the first precursor react with the dielectric layer and attach on sidewalls of the trench. The method further includes partially etching portions of the first precursor on the sidewalls of the trench to expose upper portions of the sidewalls of the trench. The method further includes introducing a second precursor into the trench, such that portions of the second precursor react with the remaining portions of the first precursor to form the dielectric material at the bottom of the trench.

Abstract: A semiconductor structure is provided. The semiconductor structure includes a substrate, a channel layer, a barrier layer, a compound semiconductor layer, a gate electrode, and a stack of dielectric layers. The channel layer is disposed on the substrate. The barrier layer is disposed on the channel layer. The compound semiconductor layer is disposed on the barrier layer. The gate electrode is disposed on the compound semiconductor layer. The stack of dielectric layers is disposed on the gate electrode. The stack of dielectric layers includes layers having different etching rates.

Abstract: A method for treating wastewater containing ertriazole compounds is provided. Hypochlorous acid (HOCl) having a neutral to slightly acidic pH value is added to the wastewater containing triazole compounds for reaction, thereby effectively reacting more than 90% of triazole compounds.

Abstract: The present disclosure provides a semiconductor structure and a method of manufacturing a semiconductor structure. The semiconductor structure includes a substrate, semiconductor structures, an isolation layer, an adhesive layer, a metal layer, a metal nitride layer, a semiconductor layer, a profile modifier layer, and a disconnection structure. The semiconductor structures are disposed on the substrate. The isolation layer is disposed between the semiconductor structures. The metal layer is disposed on an adhesive layer. The metal nitride layer is disposed on the metal layer. The semiconductor layer is disposed on the metal nitride layer. The profile modifier layer is disposed on the semiconductor layer. The disconnection structure is disposed and extending from the profile modifier layer to the isolation layer. A first width of the disconnection structure in the profile modifier layer is substantially the same as a second width of the disconnection structure in the isolation layer.

Abstract: A semiconductor package includes a bottom substrate and a top substrate space apart from the bottom substrate such that the bottom substrate and the top substrate define a gap therebetween. A logic die is mounted on a top surface of the bottom substrate. The logic die has a thickness of 125-350 micrometers. A plurality of copper cored solder balls is disposed between the bottom substrate and the top substrate around the logic die to electrically connect the bottom substrate with the top substrate. A sealing resin fills into the gap between the bottom substrate and the top substrate and sealing the logic die and the plurality of copper cored solder balls in the gap.

Abstract: A file verification method, a file verification system and a file verification server are provided. The file verification method includes the following steps. A tree data structure is established according to a plurality of first hash values of a plurality of first electronic files. A first root hash value of the tree data structure is stored into a block of a blockchain. A verification data including block information of the block, one of the first hash values and at least one non-terminal hash value of the tree data structure is generated for one of the first electronic files. A second electronic file is verified according to the verification data.

Abstract: An augmented reality system includes a portable electronic device, a pair of augmented reality glasses, and a processing circuit. The portable electronic device has a display module and a positioning assembly, and the positioning assembly is disposed on the display module. The augmented reality glasses include an image capture module, and the image capture module is configured to capture at least one image of the display module. The processing circuit is configured to determine a position of an image center point of the at least one image relative to the positioning assembly according to the at least one image. When the processing circuit determines that the position of the image center point moves from the display module across the positioning assembly, the processing circuit controls the augmented reality glasses to display a virtual screen, and the virtual screen extends from a first side of the display module.

Abstract: An augmented reality system includes a portable electronic device, a pair of augmented reality glasses, and a processing circuit. The portable electronic device has a display module and a positioning assembly, and the positioning assembly is disposed on the display module. The augmented reality glasses include an image capture module, and the image capture module is configured to capture at least one image of the display module. The processing circuit is configured to determine a position of an image center point of the at least one image relative to the positioning assembly according to the at least one image. When the processing circuit determines that the position of the image center point moves from the display module across the positioning assembly, the processing circuit controls the augmented reality glasses to display a virtual screen, and the virtual screen extends from a first side of the display module.

Abstract: A file verification method, a file verification system and a file verification server are provided. The file verification method includes the following steps. A tree data structure is established according to a plurality of first hash values of a plurality of first electronic files. A first root hash value of the tree data structure is stored into a block of a blockchain. A verification data including block information of the block, one of the first hash values and at least one non-terminal hash value of the tree data structure is generated for one of the first electronic files. A second electronic file is verified according to the verification data.

Abstract: A mobile device performs thermal management during concurrent battery charging and workload execution based on a thermal headroom. The thermal headroom is an amount of power, in a form of heat, that heat dissipation hardware in the mobile device is estimated to dissipate when the mobile device operates at a target temperature. After the thermal headroom is determined, the mobile device determines a first power allocation to system loading, which is caused by one or more applications running on the mobile device. The first power allocation is subtracted from the thermal headroom to obtain a second power allocation to a charger, which charges a battery module of the mobile device while the one or more application are running. The mobile device then sets an input power limit of the charger based on the second power allocation.

Abstract: An alternating current photovoltaic module includes a photovoltaic cell module, an inverter, and an electricity storing component. The inverter includes an electricity transforming unit and a micro control unit. The photovoltaic cell module operates to transform luminous energy into electricity. The electricity transforming unit operates to transform electricity. In addition, the micro control unit operates to control the inverter to deliver the electricity which is generated by photovoltaic cell module and transformed by the electricity transforming unit to the electricity storing component for storing the electricity. The micro control unit also operates to control the electricity storing component for providing the stored electricity in the electricity storing component.

Abstract: A manufacturing process for a thermally enhanced package is disclosed. First, a substrate strip including at least a substrate is provided. Next, at least a chip is disposed on an upper surface of the substrate, and the chip is electrically connected to the substrate. Then, a prepreg and a heat dissipating metal layer are provided, and the heat dissipating metal layer is disposed on a first surface of the prepreg and a second surface of the prepreg faces toward the chip. Finally, the prepreg covers the chip by laminating the prepreg and the substrate.

Abstract: A flip chip package process is provided. First, a substrate strip including at least one substrate is provided. Next, at least one chip is disposed on the substrate, and the chip is electrically connected to the substrate. Then, a stencil having at least one opening and an air slot hole is disposed on an upper surface of the substrate strip, an air gap is formed between the stencil and the substrate strip, the air gap connects the opening and the air slot hole, and the chip is located in the opening. Finally, a liquid compound is formed into the opening of the stencil to encapsulate the chip, and a vacuum process is performed through the air slot hole and the air gap, so as to prevent the air inside the opening from being encapsulated by the liquid compound to become voids.

Abstract: A flip chip package process is provided. First, a substrate strip including at least one substrate is provided. Next, at least one chip is disposed on the substrate, and the chip is electrically connected to the substrate. Then, a stencil having at least one opening and an air slot hole is disposed on an upper surface of the substrate strip, an air gap is formed between the stencil and the substrate strip, the air gap connects the opening and the air slot hole, and the chip is located in the opening. Finally, a liquid compound is formed into the opening of the stencil to encapsulate the chip, and a vacuum process is performed through the air slot hole and the air gap, so as to prevent the air inside the opening from being encapsulated by the liquid compound to become voids.

Abstract: A manufacturing process for a thermally enhanced package is disclosed. First, a substrate strip including at least a substrate is provided. Next, at least a chip is disposed on an upper surface of the substrate, and the chip is electrically connected to the substrate. Then, a prepreg and a heat dissipating metal layer are provided, and the heat dissipating metal layer is disposed on a first surface of the prepreg and a second surface of the prepreg faces toward the chip. Finally, the prepreg covers the chip by laminating the prepreg and the substrate.