Abstract: A device includes an interposer, which includes a substrate having a top surface. An interconnect structure is formed over the top surface of the substrate, wherein the interconnect structure includes at least one dielectric layer, and metal features in the at least one dielectric layer. A plurality of through-substrate vias (TSVs) is in the substrate and electrically coupled to the interconnect structure. A first die is over and bonded onto the interposer. A second die is bonded onto the interposer, wherein the second die is under the interconnect structure.

Abstract: A method of manufacturing a semiconductor device includes forming a multi-layer stack of alternating first layers of a first semiconductor material and second layers of a second semiconductor material on a semiconductor substrate, forming a first recess through the multi-layer stack, and laterally recessing sidewalls of the second layers of the multi-layer stack. The sidewalls are adjacent to the first recess. The method further includes forming inner spacers with respective seams adjacent to the recessed second layers of the multi-layer stack and performing an anneal treatment on the inner spacers to close the respective seams.

Abstract: A free-standing faucet which includes a valve assembly, a spout, an inlet tube set, and a free-standing casing tube, a spray holder, and a spray is revealed. The valve assembly consists of a housing, a mixing valve, and a diverter, and a handle. The housing is composed of a mixing valve chamber in which the mixing valve is mounted, a pipe joint connected to the inlet tube set, a connection portion formed on one side of the pipe joint close to the mixing valve chamber, a first cold water channel, and a first hot water channel. The first hot and cold water channels are formed inside the pipe joint and communicating with the connection portion and the inlet tube set. An adapter is connected to the connection portion and having second cold and hot water channels. Thereby the mixing valve can be assembled and positioned easily, securely and accurately.

Abstract: A rough-in assembly for mounting a free-standing faucet on a floor is revealed. The rough-in assembly includes a mounting base, a connection tube set having cold-water and hot-water connection tubes, a fixing plate, and a plurality of nuts. The mounting base consists of a bottom plate fixed on a laminated wood, a tube-fixing portion positioned on the bottom plate and provided with two locking slots, and a plurality of bolts projecting from the bottom plate and inserted through a mounting hole on the floor. The cold-water and hot-water connection tubes are locked in the two locking slots of the tube-fixing portion. The fixing plate allows the bolts of the mounting base to pass therethrough. The nuts are threaded on the bolts for fastening the fixing plate on the floor. Thereby the free-standing faucet is secured on the floor firmly and production cost is dramatically reduced.

Abstract: A free-standing faucet which includes a valve assembly, a spout, an inlet tube set, and a free-standing casing tube, a spray holder, and a spray is revealed. The valve assembly consists of a housing, a mixing valve, and a diverter, and a handle. The housing is composed of a mixing valve chamber in which the mixing valve is mounted, a pipe joint connected to the inlet tube set, a connection portion formed on one side of the pipe joint close to the mixing valve chamber, a first cold water channel, and a first hot water channel. The first hot and cold water channels are formed inside the pipe joint and communicating with the connection portion and the inlet tube set. An adapter is connected to the connection portion and having second cold and hot water channels. Thereby the mixing valve can be assembled and positioned easily, securely and accurately.

Abstract: A rough-in assembly for mounting a free-standing faucet on a floor is revealed. The rough-in assembly includes a mounting base, a connection tube set having cold-water and hot-water connection tubes, a fixing plate, and a plurality of nuts. The mounting base consists of a bottom plate fixed on a laminated wood, a tube-fixing portion positioned on the bottom plate and provided with two locking slots, and a plurality of bolts projecting from the bottom plate and inserted through a mounting hole on the floor. The cold-water and hot-water connection tubes are locked in the two locking slots of the tube-fixing portion. The fixing plate allows the bolts of the mounting base to pass therethrough. The nuts are threaded on the bolts for fastening the fixing plate on the floor. Thereby the free-standing faucet is secured on the floor firmly and production cost is dramatically reduced.

Abstract: A method and apparatus for depositing a low dielectric constant film by reaction of an organo silane compound and an oxidizing gas. The oxidized organo silane film has excellent barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organo silane film can also be used as an etch stop or an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organo silane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organo silane film is produced by reaction of methyl silane, CH3SiH3, and N2O.

Abstract: A method and apparatus for depositing a low dielectric constant film by reaction of an organo silane compound and an oxidizing gas. The oxidized organo silane film has excellent barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organo silane film can also be used as an etch stop or an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organo silane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organo silane film is produced by reaction of methyl silane, CH3SiH3, and N2O.

Abstract: A method and apparatus for depositing a low dielectric constant film by reaction of an organo silane compound and an oxidizing gas. The oxidized organo silane film has excellent barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organo silane film can also be used as an etch stop or an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organo silane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organo silane film is produced by reaction of methyl silane, CH3SiH3, and N2O.

Abstract: A method and apparatus for depositing a low dielectric constant film by reaction of an organo silane compound and an oxidizing gas. The oxidized organo silane film has excellent barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organo silane film can also be used as an etch stop or an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organo silane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organo silane film is produced by reaction of methyl silane, CH3SiH3, and N2O.

Abstract: A method and apparatus for depositing a low dielectric constant film by reaction of an organo silane compound and an oxidizing gas. The oxidized organo silane film has excellent barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organo silane film can also be used as an etch stop or an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organo silane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organo silane film is produced by reaction of methyl silane, CH3SiH3, and N2O.

Abstract: A method and apparatus for depositing a low dielectric constant film by reaction of an organo silane compound and an oxidizing gas. The oxidized organo silane film has excellent barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organo silane film can also be used as an etch stop or an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organo silane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organo silane film is produced by reaction of methyl silane, CH3SiH3, and N2O.

Abstract: A method and apparatus for depositing a low dielectric constant film by reaction of an organo silane compound and an oxidizing gas. The oxidized organo silane film has excellent barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organo silane film can also be used as an etch stop or an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organo silane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organo silane film is produced by reaction of methyl silane, CH3SiH3, and N2O.

Abstract: A method and apparatus for depositing a low dielectric constant film by reaction of an organo silane compound and an oxidizing gas. The oxidized organo silane film has excellent barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organo silane film can also be used as an etch stop or an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organo silane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organo silane film is produced by reaction of methyl silane, CH3SiH3, and N2O.

Abstract: A method and apparatus for depositing a low dielectric constant film by reaction of an organo silane compound and an oxidizing gas. The oxidized organo silane film has excellent barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organo silane film can also be used as an etch stop or an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organo silane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organo silane film is produced by reaction of methyl silane, CH3SiH3, and N2O.

Abstract: A method and apparatus for depositing a low dielectric constant film by reaction of an organo silane compound and an oxidizing gas. The oxidized organo silane film has excellent barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organo silane film can also be used as an etch stop or an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organo silane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organo silane film is produced by reaction of methyl silane, CH3SiH3, and N2O.