Patents by Inventor Yung-Chi Lin

Yung-Chi Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210393995
    Abstract: A positive-pressure protective wear has a protective body and an air supply. The protective body has a clothing and a headgear connected with the clothing. The air supply is connected with the protective body and inputs gas into the protective body to keep the protective body under positive pressure, and this can provide an effect of ventilation.
    Type: Application
    Filed: March 15, 2021
    Publication date: December 23, 2021
    Inventors: Yung Chi Lin, Chao-Ting Lin, Tzu-Ying Lin
  • Publication number: 20210391306
    Abstract: Provided are integrated circuit packages and methods of forming the same. An integrated circuit package includes at least one first die, a plurality of bumps, a second die and a dielectric layer. The bumps are electrically connected to the at least one first die at a first side of the at least one first die. The second die is electrically connected to the at least one first die at a second side of the at least one first die. The second side is opposite to the first side of the at least one first die. The dielectric layer is disposed between the at least one first die and the second die and covers a sidewall of the at least one first die.
    Type: Application
    Filed: August 27, 2021
    Publication date: December 16, 2021
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chia-Hao Hsu, Yung-Chi Lin, Wen-Chih Chiou
  • Publication number: 20210384158
    Abstract: A semiconductor package including an improved isolation bonding film and methods of forming the same are disclosed. In an embodiment, a semiconductor device includes a first die bonded to a package substrate, the first die including vias extending through a substrate, the vias extending above a top surface of the substrate; a first dielectric film extending along a top surface of the package substrate, along the top surface of the substrate, and along sidewalls of the first die, the vias extending through the first dielectric film; a second die bonded to the first dielectric film and the vias; and an encapsulant over the package substrate, the first die, the first dielectric film, and the second die.
    Type: Application
    Filed: August 23, 2021
    Publication date: December 9, 2021
    Inventors: Ming-Tsu Chung, Ku-Feng Yang, Yung-Chi Lin, Wen-Chih Chiou, Chen-Hua Yu
  • Publication number: 20210335694
    Abstract: A semiconductor device includes a through-substrate via extending from a frontside to a backside of a semiconductor substrate. The through-substrate via includes a concave or a convex portion adjacent to the backside of the semiconductor substrate. An isolation film is formed on the backside of the semiconductor substrate. A conductive layer includes a first portion formed on the concave or convex portion of the through substrate via and a second portion formed on the isolation film. A passivation layer partially covers the conductive layer.
    Type: Application
    Filed: July 2, 2021
    Publication date: October 28, 2021
    Inventors: Yung-Chi Lin, Hsin-Yu Chen, Ming-Tsu Chung, HsiaoYun Lo, Hong-Ye Shih, Chia-Yin Chen, Ku-Feng Yang, Tsang-Jiuh Wu, Wen-Chih Chiou
  • Publication number: 20210327836
    Abstract: A semiconductor structure and a manufacturing method thereof are provided. The semiconductor structure includes a semiconductor substrate, an interconnection structure, through substrate vias, conductive pillars and dummy conductive pillars. The interconnection structure is disposed at a front side of the semiconductor substrate, and comprises a stack of dielectric layers and interconnection elements spreading in the stack of dielectric layers. The through substrate vias separately penetrate through the semiconductor substrate and the stack of dielectric layers. The conductive pillars are disposed at a front side of the interconnection structure facing away from the semiconductor substrate, and respectively in electrical connection with one of the through substrate vias. The dummy conductive pillars are disposed aside the conductive pillars at the front side of the interconnection structure.
    Type: Application
    Filed: July 1, 2021
    Publication date: October 21, 2021
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yung-Chi Lin, Chen-Hua Yu, Tsang-Jiuh Wu, Wen-Chih Chiou
  • Publication number: 20210327866
    Abstract: A device package includes a first die directly bonded to a second die at an interface, wherein the interface comprises a conductor-to-conductor bond. The device package further includes an encapsulant surrounding the first die and the second die and a plurality of through vias extending through the encapsulant. The plurality of through vias are disposed adjacent the first die and the second die. The device package further includes a plurality of thermal vias extending through the encapsulant and a redistribution structure electrically connected to the first die, the second die, and the plurality of through vias. The plurality of thermal vias is disposed on a surface of the second die and adjacent the first die.
    Type: Application
    Filed: July 21, 2020
    Publication date: October 21, 2021
    Inventors: Chen-Hua Yu, Yung-Chi Lin, Wen-Chih Chiou
  • Patent number: 11145623
    Abstract: Provided are integrated circuit packages and methods of forming the same. An integrated circuit package includes at least one first die, a plurality of bumps, a second die and a dielectric layer. The bumps are electrically connected to the at least one first die at a first side of the at least one first die. The second die is electrically connected to the at least one first die at a second side of the at least one first die. The second side is opposite to the first side of the at least one first die. The dielectric layer is disposed between the at least one first die and the second die and covers a sidewall of the at least one first die.
    Type: Grant
    Filed: June 14, 2019
    Date of Patent: October 12, 2021
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chia-Hao Hsu, Yung-Chi Lin, Wen-Chih Chiou
  • Publication number: 20210305200
    Abstract: In an embodiment, a device includes: a first wafer including a first substrate and a first interconnect structure, a sidewall of the first interconnect structure forming an obtuse angle with a sidewall of the first substrate; and a second wafer bonded to the first wafer, the second wafer including a second substrate and a second interconnect structure, the sidewall of the first substrate being laterally offset from a sidewall of the second substrate and a sidewall of the second interconnect structure.
    Type: Application
    Filed: September 14, 2020
    Publication date: September 30, 2021
    Inventors: Yung-Chi Lin, Tsang-Jiuh Wu, Wen-Chih Chiou, Chen-Hua Yu
  • Patent number: 11101240
    Abstract: A semiconductor package including an improved isolation bonding film and methods of forming the same are disclosed. In an embodiment, a semiconductor device includes a first die bonded to a package substrate, the first die including vias extending through a substrate, the vias extending above a top surface of the substrate; a first dielectric film extending along a top surface of the package substrate, along the top surface of the substrate, and along sidewalls of the first die, the vias extending through the first dielectric film; a second die bonded to the first dielectric film and the vias; and an encapsulant over the package substrate, the first die, the first dielectric film, and the second die.
    Type: Grant
    Filed: June 28, 2019
    Date of Patent: August 24, 2021
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Ming-Tsu Chung, Ku-Feng Yang, Yung-Chi Lin, Wen-Chih Chiou, Chen-Hua Yu
  • Patent number: 11063008
    Abstract: A semiconductor structure and a manufacturing method thereof are provided. The semiconductor structure includes a semiconductor substrate, an interconnection structure, a through substrate via, an insulating layer, a conductive pillar, a dummy conductive pillar, a passivation layer and a bonding pad. The interconnection structure is disposed over the semiconductor substrate. The through substrate via at least partially extends in the semiconductor substrate along a thickness direction of the semiconductor substrate, and electrically connects to the interconnection structure. The insulating layer is disposed over the interconnection structure. The conductive pillar is disposed in the insulating layer, and electrically connected to the through substrate via. The dummy conductive pillar is disposed in the insulating layer, and laterally separated from the conductive pillar. The passivation layer is disposed over the insulating layer.
    Type: Grant
    Filed: September 16, 2019
    Date of Patent: July 13, 2021
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yung-Chi Lin, Chen-Hua Yu, Tsang-Jiuh Wu, Wen-Chih Chiou
  • Patent number: 11056419
    Abstract: A semiconductor device includes a through-substrate via extending from a frontside to a backside of a semiconductor substrate. The through-substrate via includes a concave or a convex portion adjacent to the backside of the semiconductor substrate. An isolation film is formed on the backside of the semiconductor substrate. A conductive layer includes a first portion formed on the concave or convex portion of the through substrate via and a second portion formed on the isolation film. A passivation layer partially covers the conductive layer.
    Type: Grant
    Filed: September 13, 2019
    Date of Patent: July 6, 2021
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yung-Chi Lin, Hsin-Yu Chen, Ming-Tsu Chung, HsiaoYun Lo, Hong-Ye Shih, Chia-Yin Chen, Ku-Feng Yang, Tsang-Jiuh Wu, Wen-Chih Chiou
  • Publication number: 20210167018
    Abstract: A device includes an interposer, which includes a substrate having a top surface. An interconnect structure is formed over the top surface of the substrate, wherein the interconnect structure includes at least one dielectric layer, and metal features in the at least one dielectric layer. A plurality of through-substrate vias (TSVs) is in the substrate and electrically coupled to the interconnect structure. A first die is over and bonded onto the interposer. A second die is bonded onto the interposer, wherein the second die is under the interconnect structure.
    Type: Application
    Filed: February 16, 2021
    Publication date: June 3, 2021
    Inventors: Hsien-Pin Hu, Chen-Hua Yu, Ming-Fa Chen, Jing-Cheng Lin, Jiun Ren Lai, Yung-Chi Lin
  • Publication number: 20210082846
    Abstract: A semiconductor structure and a manufacturing method thereof are provided. The semiconductor structure includes a semiconductor substrate, an interconnection structure, a through substrate via, an insulating layer, a conductive pillar, a dummy conductive pillar, a passivation layer and a bonding pad. The interconnection structure is disposed over the semiconductor substrate. The through substrate via at least partially extends in the semiconductor substrate along a thickness direction of the semiconductor substrate, and electrically connects to the interconnection structure. The insulating layer is disposed over the interconnection structure. The conductive pillar is disposed in the insulating layer, and electrically connected to the through substrate via. The dummy conductive pillar is disposed in the insulating layer, and laterally separated from the conductive pillar. The passivation layer is disposed over the insulating layer.
    Type: Application
    Filed: September 16, 2019
    Publication date: March 18, 2021
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Yung-Chi Lin, Chen-Hua Yu, Tsang-Jiuh Wu, Wen-Chih Chiou
  • Publication number: 20210050316
    Abstract: A device includes a first side interconnect structure over a first side of a substrate, wherein active circuits are in the substrate and adjacent to the first side of the substrate, a dielectric layer over a second side of the substrate, a pad embedded in the dielectric layer, the pad comprising an upper portion and a bottom portion formed of two different materials and a passivation layer over the dielectric layer.
    Type: Application
    Filed: October 19, 2020
    Publication date: February 18, 2021
    Inventors: Hsiao Yun Lo, Lin-Chih Huang, Tasi-Jung Wu, Hsin-Yu Chen, Yung-Chi Lin, Ku-Feng Yang, Tsang-Jiuh Wu, Wen-Chih Chiou
  • Patent number: 10923431
    Abstract: A device includes an interposer, which includes a substrate having a top surface. An interconnect structure is formed over the top surface of the substrate, wherein the interconnect structure includes at least one dielectric layer, and metal features in the at least one dielectric layer. A plurality of through-substrate vias (TSVs) is in the substrate and electrically coupled to the interconnect structure. A first die is over and bonded onto the interposer. A second die is bonded onto the interposer, wherein the second die is under the interconnect structure.
    Type: Grant
    Filed: May 20, 2019
    Date of Patent: February 16, 2021
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Hsien-Pin Hu, Chen-Hua Yu, Ming-Fa Chen, Jing-Cheng Lin, Jiun Ren Lai, Yung-Chi Lin
  • Publication number: 20200411472
    Abstract: A semiconductor package including an improved isolation bonding film and methods of forming the same are disclosed. In an embodiment, a semiconductor device includes a first die bonded to a package substrate, the first die including vias extending through a substrate, the vias extending above a top surface of the substrate; a first dielectric film extending along a top surface of the package substrate, along the top surface of the substrate, and along sidewalls of the first die, the vias extending through the first dielectric film; a second die bonded to the first dielectric film and the vias; and an encapsulant over the package substrate, the first die, the first dielectric film, and the second die.
    Type: Application
    Filed: June 28, 2019
    Publication date: December 31, 2020
    Inventors: Ming-Tsu Chung, Ku-Feng Yang, Yung-Chi Lin, Wen-Chih Chiou, Chen-Hua Yu
  • Publication number: 20200395338
    Abstract: Provided are integrated circuit packages and methods of forming the same. An integrated circuit package includes at least one first die, a plurality of bumps, a second die and a dielectric layer. The bumps are electrically connected to the at least one first die at a first side of the at least one first die. The second die is electrically connected to the at least one first die at a second side of the at least one first die. The second side is opposite to the first side of the at least one first die. The dielectric layer is disposed between the at least one first die and the second die and covers a sidewall of the at least one first die.
    Type: Application
    Filed: June 14, 2019
    Publication date: December 17, 2020
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chia-Hao Hsu, Yung-Chi Lin, Wen-Chih Chiou
  • Patent number: 10867963
    Abstract: A die stack structure includes a first die, a dielectric material layer, a first bonding dielectric layer and a second die. The first die has an active surface and a rear surface opposite to the active surface. The first die includes a through-substrate via (TSV) therein. The TSV protrudes from the rear surface of the first die. The dielectric material layer surrounds and wraps around the first die. The first bonding dielectric layer is disposed on a top surface of the dielectric material layer and the rear surface of the first die and covers the TSV, wherein the TSV penetrates through the first bonding dielectric layer. The second die is disposed on the first die and has an active surface and a rear surface opposite to the active surface. The second die has a second bonding dielectric layer and a conductive feature disposed in the second bonding dielectric layer.
    Type: Grant
    Filed: March 14, 2019
    Date of Patent: December 15, 2020
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chia-Hao Hsu, Chien-Ming Chiu, Yung-Chi Lin, Tsang-Jiuh Wu, Wen-Chih Chiou
  • Patent number: 10867985
    Abstract: A method includes placing a first plurality of device dies over a first carrier, with the first plurality of device dies and the first carrier in combination forming a first composite wafer. The first composite wafer is bonded to a second wafer, and the first plurality of device dies is bonded to a second plurality of device dies in the second wafer through hybrid bonding. The method further includes de-bonding the first carrier from the first plurality of device dies, encapsulating the first plurality of device dies in an encapsulating material, and forming an interconnect structure over the first plurality of device dies and the encapsulating material.
    Type: Grant
    Filed: October 11, 2019
    Date of Patent: December 15, 2020
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chen-Hua Yu, Wen-Chih Chiou, Yung-Chi Lin
  • Publication number: 20200343176
    Abstract: A method comprises forming a trench extending through an interlayer dielectric layer over a substrate and partially through the substrate, depositing a photoresist layer over the trench, wherein the photoresist layer partially fills the trench, patterning the photoresist layer to remove the photoresist layer in the trench and form a metal line trench over the interlayer dielectric layer, filling the trench and the metal line trench with a conductive material to form a via and a metal line, wherein an upper portion of the trench is free of the conductive material and depositing a dielectric material over the substrate, wherein the dielectric material is in the upper portion of the trench.
    Type: Application
    Filed: July 13, 2020
    Publication date: October 29, 2020
    Inventors: Yung-Chi Lin, Hsin-Yu Chen, Lin-Chih Huang, Tsang-Jiuh Wu, Wen-Chih Chiou