Abstract: Account delegation is provided. A request for access to a secure system using an owner's account is received from an applier via a browser supplement module on the applier's computing device. The request is communicated to the account owner via a browser supplement module on the account owner's computing device. Approval of the request is received from the account owner. The secure system is logged into using the account owner's credential. A connection to the applier's computing device is established to act as a proxy for communication between the secure system and the applier's computing device. Further provided herein are a computer system and a computer program product for performing the method.

Abstract: A method of manufacturing an electronic device, including the following steps, is provided. A first dielectric layer and a second dielectric layer are provided. The first dielectric layer has a first surface and a second surface opposite to each other, and the second dielectric layer has a third surface and a fourth surface opposite to each other. A first unit is formed on the first surface or the second surface of the first dielectric layer. The first dielectric layer and the second dielectric layer are combined to form a substrate structure. The second surface of the first dielectric layer faces the third surface of the second dielectric layer. A dielectric loss of the first unit is less than a dielectric loss of the first dielectric layer. The method of manufacturing the electronic device of the embodiment of the disclosure can reduce the dielectric loss by using the unit.

Abstract: A method for fabricating a polysilicon thin film transistor combining the channel oxidation process and the plasma hydrogenation process is disclosed. The fabrication process includes the following steps: (a) forming a field oxide layer on a silicon substrate, (b) forming a polysilicon layer on a portion of the field oxide layer to serve as a gate, (c) forming a gate oxide on the polysilicon layer and another portion of the field oxide layer, (d) forming a polysilicon channel on the gate oxide layer, (e) defining a source region and a drain region in a portion of the polysilicon channel, (f) oxidizing another portion of the polysilicon channel, (g) forming a dielectric layer on said polysilicon channel, and (h) hydrogenating said polysilicon thin film transistor by plasma. Such a combination results in an better efficiency for passivating the tail state traps, and can prevent the polysilicon thin film from being damaged caused by the plasma glow during the plasma hydrogenation process.