Abstract: A semiconductor device includes first and second cell rows, first to fourth fin shaped structures. The first cell row has a first row height. The second cell row is adjacent with the first cell row, and having a second row height. The first fin shaped structure extends across the first cell row. The second fin shaped structure extends across the first cell row, and separated from the first fin shaped structure. The third fin shaped structure extends across the second cell row. The fourth fin shaped structure extends across the second cell row, and separated from the third fin shaped structure. The first to fourth fin shaped structures are arranged in order along the first direction, each of the first, second and fourth fin shaped structure has a first conductive type, the third fin shaped structure has a second conductive type.

Abstract: An IC structure includes first, second, third, and fourth transistors on a substrate, a first net and a second net. The first net includes a plurality of first metal lines routed on a first metallization layer, and a plurality of first metal vias electrically connecting the plurality of first metal lines to the first and second transistors. The second net includes a plurality of second metal lines routed on a second metallization layer, and a plurality of second metal vias electrically connecting the plurality of second metal lines to the third and fourth transistors. A count of the first metal vias of the first net is less than a count of the second metal vias of the second net, and a line height of the first metal line of the first net is greater than a line height of the second metal line of the second net.

Abstract: An integrated circuit includes a first diffusion area for a first type transistor. The first type transistor includes a first drain region and a first source region. A second diffusion area for a second type transistor is separated from the first diffusion area. The second type transistor includes a second drain region and a second source region. A gate electrode continuously extends across the first diffusion area and the second diffusion area in a routing direction. A first metallic structure is electrically coupled with the first source region. A second metallic structure is electrically coupled with the second drain region. A third metallic structure is disposed over and electrically coupled with the first and second metallic structures. A width of the first metallic structure is substantially equal to or larger than a width of the third metallic structure.

Abstract: A semiconductor device includes first cell rows and second cell rows. The first cell rows extend in a first direction. Each of the first cell rows has a first row height. The second cell rows extend in the first direction. Each of the second cell rows has a second row height. The first row height is greater than the second row height. The first cell rows and the second cell rows are interlaced in a periodic sequence. A first row quantity of the first cell rows in the periodic sequence is greater than a second row quantity of the second cell rows in the periodic sequence.

Abstract: An IC structure includes first, second, third, and fourth transistors on a substrate, a first net and a second net. The first net includes a plurality of first metal lines routed on a first metallization layer, and a plurality of first metal vias electrically connecting the plurality of first metal lines to the first and second transistors. The second net includes a plurality of second metal lines routed on a second metallization layer, and a plurality of second metal vias electrically connecting the plurality of second metal lines to the third and fourth transistors. A total length of the second metal lines of the second net is shorter than a total length of the first metal lines of the first net. A count of the f first metal vias of the first net is less than a count of the second metal vias of the second net.

Abstract: An integrated circuit includes a first diffusion area for a first type transistor. The first type transistor includes a first drain region and a first source region. A second diffusion area for a second type transistor is separated from the first diffusion area. The second type transistor includes a second drain region and a second source region. A gate electrode continuously extends across the first diffusion area and the second diffusion area in a routing direction. A first metallic structure is electrically coupled with the first source region. A second metallic structure is electrically coupled with the second drain region. A third metallic structure is disposed over and electrically coupled with the first and second metallic structures. A width of the first metallic structure is substantially equal to or larger than a width of the third metallic structure.

Abstract: A method includes disposing a first power rail, a second power rail and a third power rail arranged in order; disposing a first cell row having a first row height between the first power rail and the second power rail; and disposing a second cell row having the first row height between the third power rail and the second power rail. Each of the first power rail and the third power rail has a first width, and the second power rail has a second width larger than the first width.

Abstract: An IC structure includes first, second, third, and fourth transistors on a substrate, a first net and a second net. The first net includes a plurality of first metal lines routed on a first metallization layer, and a plurality of first metal vias electrically connecting the plurality of first metal lines to the first and second transistors. The second net includes a plurality of second metal lines routed on a second metallization layer, and a plurality of second metal vias electrically connecting the plurality of second metal lines to the third and fourth transistors. A total length of the second metal lines of the second net is shorter than a total length of the first metal lines of the first net. A count of the f first metal vias of the first net is less than a count of the second metal vias of the second net.

Abstract: An IC structure includes first, second, third and fourth transistors on a substrate, and first and second metallization layers over the transistors. The first metallization layer has a plurality of first metal lines extending laterally along a first direction and having a first line width measured in a second direction. One or more of the first metal lines are part of a first net electrically connecting the first and second transistors. The second metallization layer has a plurality of second metal lines extending laterally along the second direction and having a second line width measured in the first direction and less than the first line width. One or more of the second metal lines are part of a second net electrically connecting the third and fourth transistors, and a total length of the second net is less than a total length of the first net.

Abstract: Electronic design automation (EDA) of the present disclosure, in various embodiments, optimizes designing, simulating, analyzing, and verifying of one or more electronic architectural designs for an electronic device. The EDA of the present disclosure identifies one or more electronic architectural features from the one or more electronic architectural designs. In some situations, the EDA of the present disclosure can manipulate one or more electronic architectural models over multiple iterations using a machine learning process until one or more electronic architectural models from among the one or more electronic architectural models satisfy one or more electronic design targets. The EDA of the present disclosure substitutes the one or more electronic architectural models that satisfy the one or more electronic design targets for the one or more electronic architectural features in the one or more electronic architectural designs to optimize the one or more electronic architectural designs.

Abstract: A semiconductor device includes first cell rows and second cell rows. The first cell rows extend in a first direction. Each of the first cell rows has a first row height. The second cell rows extend in the first direction. Each of the second cell rows has a second row height. The first row height is greater than the second row height. The first cell rows and the second cell rows are interlaced in a periodic sequence. A first row quantity of the first cell rows in the periodic sequence is greater than a second row quantity of the second cell rows in the periodic sequence.

Abstract: Electronic design automation (EDA) of the present disclosure, in various embodiments, optimizes designing, simulating, analyzing, and verifying of one or more electronic architectural designs for an electronic device. The EDA of the present disclosure identifies one or more electronic architectural features from the one or more electronic architectural designs. In some situations, the EDA of the present disclosure can manipulate one or more electronic architectural models over multiple iterations using a machine learning process until one or more electronic architectural models from among the one or more electronic architectural models satisfy one or more electronic design targets. The EDA of the present disclosure substitutes the one or more electronic architectural models that satisfy the one or more electronic design targets for the one or more electronic architectural features in the one or more electronic architectural designs to optimize the one or more electronic architectural designs.

Abstract: Electronic design automation (EDA) of the present disclosure, in various embodiments, optimizes designing, simulating, analyzing, and verifying of one or more electronic architectural designs for an electronic device. The EDA of the present disclosure identifies one or more electronic architectural features from the one or more electronic architectural designs. In some situations, the EDA of the present disclosure can manipulate one or more electronic architectural models over multiple iterations using a machine learning process until one or more electronic architectural models from among the one or more electronic architectural models satisfy one or more electronic design targets. The EDA of the present disclosure substitutes the one or more electronic architectural models that satisfy the one or more electronic design targets for the one or more electronic architectural features in the one or more electronic architectural designs to optimize the one or more electronic architectural designs.

Abstract: An integrated circuit includes a first diffusion area for a first type transistor. The first type transistor includes a first drain region and a first source region. A second diffusion area for a second type transistor is separated from the first diffusion area. The second type transistor includes a second drain region and a second source region. A gate electrode continuously extends across the first diffusion area and the second diffusion area in a routing direction. A first metallic structure is electrically coupled with the first source region. A second metallic structure is electrically coupled with the second drain region. A third metallic structure is disposed over and electrically coupled with the first and second metallic structures. A width of the first metallic structure is substantially equal to or larger than a width of the third metallic structure.

Abstract: An integrated circuit includes a first diffusion area for a first type transistor. The first type transistor includes a first drain region and a first source region. A second diffusion area for a second type transistor is separated from the first diffusion area. The second type transistor includes a second drain region and a second source region. A gate electrode continuously extends across the first diffusion area and the second diffusion area in a routing direction. A first metallic structure is electrically coupled with the first source region. A second metallic structure is electrically coupled with the second drain region. A third metallic structure is disposed over and electrically coupled with the first and second metallic structures. A width of the first metallic structure is substantially equal to or larger than a width of the third metallic structure.

Abstract: Electronic design automation (EDA) of the present disclosure, in various embodiments, optimizes designing, simulating, analyzing, and verifying of one or more electronic architectural designs for an electronic device. The EDA of the present disclosure identifies one or more electronic architectural features from the one or more electronic architectural designs. In some situations, the EDA of the present disclosure can manipulate one or more electronic architectural models over multiple iterations using a machine learning process until one or more electronic architectural models from among the one or more electronic architectural models satisfy one or more electronic design targets. The EDA of the present disclosure substitutes the one or more electronic architectural models that satisfy the one or more electronic design targets for the one or more electronic architectural features in the one or more electronic architectural designs to optimize the one or more electronic architectural designs.

Abstract: A partition method includes sorting the plurality of components into a plurality of partitions according to a set of partition criteria and sorting the plurality of components of each partition into a first stack and a second stack according to a set of stack criteria, and the first stack includes a plurality of higher pitch metal layers and the second stack includes a plurality of lower pitch metal layers. The partition criteria include size, power and speed of the component, and the stack criteria include a pitch of a metal layer.

Abstract: A partition method includes sorting the plurality of components into a plurality of partitions according to a set of partition criteria and sorting the plurality of components of each partition into a first stack and a second stack according to a set of stack criteria, and the first stack includes a plurality of higher pitch metal layers and the second stack includes a plurality of lower pitch metal layers. The partition criteria include size, power and speed of the component, and the stack criteria include a pitch of a metal layer.

Abstract: An integrated circuit includes a first diffusion area for a first type transistor. The first type transistor includes a first drain region and a first source region. A second diffusion area for a second type transistor is separated from the first diffusion area. The second type transistor includes a second drain region and a second source region. A gate electrode continuously extends across the first diffusion area and the second diffusion area in a routing direction. A first metallic structure is electrically coupled with the first source region. A second metallic structure is electrically coupled with the second drain region. A third metallic structure is disposed over and electrically coupled with the first and second metallic structures. A width of the first metallic structure is substantially equal to or larger than a width of the third metallic structure.

Abstract: An integrated circuit includes a first diffusion area for a first type transistor. The first type transistor includes a first drain region and a first source region. A second diffusion area for a second type transistor is separated from the first diffusion area. The second type transistor includes a second drain region and a second source region. A gate electrode continuously extends across the first diffusion area and the second diffusion area in a routing direction. A first metallic structure is electrically coupled with the first source region. A second metallic structure is electrically coupled with the second drain region. A third metallic structure is disposed over and electrically coupled with the first and second metallic structures. A width of the first metallic structure is substantially equal to or larger than a width of the third metallic structure.