Abstract: Provided are a semiconductor device and a method for manufacturing the same, and a semiconductor package. The semiconductor device includes a die stack and a cap substrate. The die stack includes a first die, second dies stacked on the first die, and a third die stacked on the second dies. The first die includes first through semiconductor vias. Each of the second dies include second through semiconductor vias. The third die includes third through semiconductor vias. The cap substrate is disposed on the third die of the die stack. A sum of a thickness of the third die and a thickness of the cap substrate ranges from about 50 ?m to about 80 ?m.

Abstract: Provided is a CoCrPt-based alloy sputtering target containing cobalt (Co), chromium (Cr), platinum (Pt), cobalt oxide and non-magnetic oxide composition, wherein the lengths of ceramic phases of Cr2O3 and Co(Cr)—X—O formed in the sputtering targets are respectively less than 3 ?m (“X” represents the metal element of the non-magnetic oxide). The sputtering target is obtained via controlling suitable composition proportion of the prealloy powder with Cr and the sintering factor to decrease the size of ceramic phases of Cr2O3 and Co(Cr)—X—O. Sputtering targets made by the methods of the present invention decrease the arcing effects and unnecessary formation of particles upon sputtering in addition to making the components of the sputtering targets distribute more uniformly therein.